• 제목/요약/키워드: Deposition property

검색결과 592건 처리시간 0.034초

전고상박막전지를 위한 (Li,La)TiO3 고체전해질의 제조와 특성 (Lithium Lanthanum Titanate Solid Electrolyte for All-Solid-State Lithium Microbattery)

  • 안준구;윤순길
    • 한국전기전자재료학회논문지
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    • 제17권9호
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    • pp.930-935
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    • 2004
  • $({Li}_{0.5}0{La}_{0.5}){TiO}_3$ (LLTO) solid electrolyte was grown on LiCo{O}_2 (LCO) cathode films deposited on $Pt/Ti{O}-2/Si{O}_2/Si$ substrate using pulsed laser deposition for all-solid-state lithium microbattery. LLTO solid electrolyte exhibits an amorphous phase at various deposition temperatures. LLTO films deposited at 10$0^{\circ}C$ showed a clear interrace without any chemical reaction with LCO, and showed an initial discharge capacity of 50 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 90 % after 100 cycles with Li anode in 1mol$ LiCl{O}_4$ in propylene carbonate (PC). The increase of capacity retention in LLTO/LCO structure than LCO itself was attributed to the structural stability of LCO cathode films by the stacked LLTO. The cells of LLTO/LCO with LLTO grown at $100^{\circ}C$ showed a good cyclic property of 63.6 % after 300 cycles. An amorphous LLTO solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium microbattery.

Ion Flux Assisted PECVD of SiON Films Using Plasma Parameters and Their Characterization of High Rate Deposition and Barrier Properties

  • Lee, Joon-S.;Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.236-236
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    • 2011
  • Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

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Electrical and mechanical property of ZnO wire using catalyst-free chemical vapor deposition

  • Lee, Jin-Kyung;Jung, Un-Seok;Kim, Hak-Seong;Yun, Ho-Yeo;Seo, Mi-Ri;Jonathan, Ho;Choi, Mi-Ri;Wan, Jae;Kim, Gyu-Tae;Lee, Sang-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.477-477
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    • 2011
  • In this paper, we synthesize ZnO wire on Si substrate by catalyst-free thermal chemical vapor deposition (CVD). Each ZnO wire is grew up at different condition such as temperature and O2 flow rate. The Young's modulus of individual ZnO wires were estimated using quasi-static and dynamic measurements, as well as resonance frequency measurements. Using this system, current-voltage characteristics of each ZnO wire structure fabricated on a trench were measured. A new concept of electromechanical device structure combined with the piezoelectric effect of ZnO will be suggested in the end of this paper.

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Investigation on Reaction Pathways for ZnO Formation from Diethylzinc and Water during Chemical Vapor Deposition

  • Kim, Young-Seok;Won, Yong-Sun
    • Bulletin of the Korean Chemical Society
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    • 제30권7호
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    • pp.1573-1578
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    • 2009
  • A computational study of the reactions between Zn-containing species, the products of the thermal decomposition of diethylzinc (DEZn) and water was investigated. The Zn-containing species – $C_2H_5)_2,\;HZnC_2H_5,\;and\;(ZnC_2H_5)_2$ – were assumed to react with water during ZnO metal organic chemical vapor deposition (MOCVD). Density functional theory (DFT) calculations at the level of B3LYP/6-311G(d) were employed for the geometry optimization and thermodynamic property evaluation. As a result dihydroxozinc, $Zn(OH)_2$, was the most probable reaction product common for all three Zn-containing species. A further clustering of $Zn(OH)_2$ was investigated to understand the initial stage of ZnO film deposition. In experiments, the reactions of DEZn and water were examined by in-situ Raman scattering in a specially designed MOCVD reactor. Although direct evidence of $Zn(OH)_2$ was not observed, some relevant reaction intermediates were successfully detected to support the validity of the gas phase reaction pathways proposed in the computational study.

PLD법으로 제작된 Phosphorus를 도핑한 ZnO 박막의 다층 구조 도입에 따른 영향 (The Effects of Phosphorus Doped ZnO Thin Films with Multilayer Structure Prepared by Pulsed Laser Deposition Method)

  • 임성훈;강홍성;김건희;장현우;김재원;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.127-130
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    • 2005
  • The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

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광화학증착법에 의한 직접패턴 PZT 박막의 제조 및 특성 (Fabrication and Characterization of Direct-Patternable PZT Film Prepared by Photochemical Metal-Organic Deposition)

  • 박형호;박형호;김태송
    • 한국재료학회지
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    • 제18권2호
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    • pp.98-102
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    • 2008
  • The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at $650^{\circ}C$ were 29 and $23\;{\mu}C/cm^2$, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

Development of a PLD heater for continuous deposition and growth of superconducting layer

  • Jeongtae Kim;Insung Park;Gwantae Kim;Taekyu Kim;Hongsoo Ha
    • 한국초전도ㆍ저온공학회논문지
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    • 제25권2호
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    • pp.14-18
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    • 2023
  • Superconducting layers deposited on the metal substrate using the pulsed laser deposition process (PLD) play a crucial role in exploring new applications of superconducting wires and enhancing the performance of superconducting devices. In order to improve the superconducting property and increase the throughput of superconducting wire fabricated by pulsed laser deposition, high temperature heating device is needed that provides high temperature stability and strong durability in high oxygen partial pressure environments while minimizing performance degradation caused by surface contamination. In this study, new heating device have been developed for PLD process that deposit and growth the superconducting material continuously on substrate using reel-to-reel transportation apparatus. New heating device is designed and fabricated using iron-chromium-aluminum wire and alumina tube as a heating element and sheath materials, respectively. Heating temperature of the heater was reached over 850 ℃ under 700 mTorr of oxygen partial pressure and is kept for 5 hours. The experimental results confirm the effectiveness of the developed heating device system in maintaining a stable and consistent temperature in PLD. These research findings make significant contributions to the exploration of new applications for superconducting materials and the enhancement of superconducting device performance.

Thin Film Morphology Control of P3HT:PCBM Organic Solar Cells Using Electrospray Deposition Process

  • 황원태;최수정;채희엽
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.432-433
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    • 2012
  • Polymer solar cells are fabricated using electrospray (e-spray) deposition process. It shows comparable performance with reference devices, and has different characteristics according to the thickness of the active layer: In the case of the devices with higher fill factor, it shows relatively lower current density, and vice versa. These films are characterized by atomic force microscopy measurement. The results indicate that the comparable power conversion efficiency made by e-spray results from the 'solvent annealing effect' by process conditions and the different thin film property is caused by the degree of self-organization of the polymer.

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Water vapor barrier properties of polymer-like amorphous carbon deposited polyethylene naphthalate film

  • 김정용;박규대;송예슬;이희진;;김성룡
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.303.1-303.1
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    • 2016
  • Polymer-like amorphous carbon films were deposited on polyethylene naphthalate (PEN) substrate by plasma-enhanced chemical vapor deposition (PECVD) and their water vapor transmission rates (WVTR) were tested. propane was used as precursors. To make a polymer-like amorphous carbon film the deposition rate, surface roughness, light transmittance, and WVTR of the films were characterized as a function of the precursor feed ratio and plasma power. The water vapor transmission rates of bare PEN film and single layer PAC on PEN substrate were 6.95 g/m2/day and 0.3 g/m2/day, respectively. The superior property the water vapor permeability of thin layers of PAC was attributed to uniform coverage and good adhesion between PAC film and PEN substrate.

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Photoluminescence property of vertically aligned ZnO nanorods.

  • Das, S.N.;Kar, J.P.;Choi, J.H.;Myoung, J.M.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.25.2-25.2
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    • 2009
  • Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.

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