• Title/Summary/Keyword: Deposition factor

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Investigation of TaNx diffusion barrier properties using Plasma-Enhanced ALD for copper interconnection

  • Han, Dong-Seok;Mun, Dae-Yong;Gwon, Tae-Seok;Kim, Ung-Seon;Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.178-178
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    • 2010
  • With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

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Electrical Characteristics of OLEDs depending on the Deposition Rate of Hole Transport Layer(TPD) (정공 수송층(TPD) 증착 속도에 따른 유기 발광 소자의 전기적 특성)

  • Kim, Weon-Jong;Lee, Young-Hwan;Lee, Sang-Kyo;Park, Hee-Doo;Cho, Kyung-Soon;Kim, Tae-Wan;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.87-88
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    • 2008
  • In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of TPD materials. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of 2.5 $\AA$/s. When the deposition rate of TPD increased from 1.5 to 3.0 $\AA$/s, we found that the average roughness is rather smoother, external quantum efficiency is superior to the others when the deposition rate of TPD is 2.5 $\AA$/s. Compared to the ones from the devices made with the deposition rate of TPD 3.0 $\AA$/s, the external quantum efficiency was improved by a factor of eight.

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Selective Area Epitaxy of GaAs and InGaAs by Ultrahigh Vacuum Chemical vapor Deposition(UHVCVD) (Ultrahigh Vacuum Chemical Vapor Deposition (UHVCVD)법에 의한 GaAs와 InGaAs 박막의 선택 에피택시)

  • 김성복
    • Journal of the Korean Vacuum Society
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    • v.4 no.3
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    • pp.275-282
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    • 1995
  • III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

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A new anti-bacterial colloidal system from tailored control of colloidal silver deposition onto functionalized porous

  • Kang, Hak-Hee;Oh, Seong-Geun
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.29 no.1
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    • pp.89-101
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    • 2003
  • A new collolidal silver (Ag) system is present in which a fine colloidal Ag is in situ deposited onto functionalized porous poly(ethylene glycol dimethacrylate) (poly (EGDMA)) microspheres. The effectiveness of Ag deposition was investigated considering the surface characteristics of poly (EGDMA) microspheres, The result reported in this study illustrates that the control of surface area and surface functionality (in this study, a hydroxyl group) of poly (EGDMA) microspheres is an important factor that determines practically the degree of deposition of colloidal Ag. The x-ray analysis showed that Ag nanoparticles were dispersed evenly inner and outer surfaces and has a face center cubic(fcc) phase. In the preservation test, the Ag-containing poly (EGDMA) microspheres had a powerful anti-bacterial performance, showing a high potential for a new preservative.

Micromorph Schottky Silicon Solar Cells

  • Kim, Joon-Dong;Han, Chang-Soo;Yun, Ju-Hyung;Yi, Jun-Sin;Park, Yun-Chang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.130-130
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    • 2010
  • Thin Si films were grown by a plasma-enhanced chemical vapor deposition (PECVD, SNTEK, Korea) system. Two different deposition condition were applied and formed a fully amorphous Si (a-Si) film and a micromorph mixing of microcrystalline Si (mc-Si) and a-Si film. Under one sun illumination, the micromorph device provided the enhanced open circuit voltage and fill factor values. It presents the fabrication of the micromorph Si film and the a-Si film by modulating a deposition condition. The performances of the Si thin film Schottky solar cells are discussed.

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Distribution of Procymidone in a Small Vinyl House after Application of Smoke Generator (소형 비닐하우스 내에서 훈연처리된 살균제 Procymidone의 분포 특성)

  • Lim, He-Kyoung;Kim, Joung-Han;Cho, Kwang-Yun;Yu, Ju-Hyun
    • Applied Biological Chemistry
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    • v.44 no.1
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    • pp.7-11
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    • 2001
  • The distribution of procymidone in a small vinyl house containing cucumber plants or mimic plants was investigated after application of smoke generator. The deposition of procymidone on glass plate and filter paper was significantly similar to that on cucumber leaves, so that glass plate and filter paper could be substituted for cucumber leaves on deposition studies. The deposition of procymidone was proportional to the horizontally projected area of surface; the deposition on the horizontal surface was maximal, and the deposition was minimal for the perpendicular surface. The amount of deposition on the backside of leaf was less than 5% compared to that on the horizontal surface of leaf. The height of leaf from the floor was not a significant factor influencing on the deposition of procymidone whether leaves were overlapped or not. However, the deposition of procymidone on the overlapped leaves was relatively less than that on the unoverlapped leaves. And the deposition difference depending on the distance between leaves was not observable. Overall, the deposition of procymidone was proportionally increased with the application rate of smoke generator, but the deposition was inversely related to the sum of the total horizontal leaf area of mimic plants and the surface area of floor.

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A New Test Method to Evaluate Potential White Pitch Deposit - Influence of pH and calcium hardness - (백색 점착성 이물질을 측정하기 위한 새로운 시험법 - pH와 칼슘경도의 영향 -)

  • Shin, Eun-Ju;Choi, Tae-Ho;Song, Bong-Keun;Cho, Byoung-Uk;Ryu, Jeong-Yong
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.41 no.2
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    • pp.26-33
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    • 2009
  • A new testing method to evaluate the deposition potential of white pitch was developed. The new method involves depositing the potential white pitch particles on the air bubble covered plastic film in the pitch deposit tester (PDT) developed by KRICT and analysing the deposited area of white pitch using an image analyzer. In addition, the effect of two important factors (pH and calcium hardness) on white pitch deposition potential was elucidated. When pH of the coated broke stock was increased from neutral to alkali or the calcium hardness of the stock was decreased, the pitch deposit area was decreased, implying that these two factors have to be controlled during the evaluation of pitch deposition potential. It was found that hydrophobicity of the surface of latex binding films repulped is a key factor influencing white pitch deposition.

Deposition of Piezoelectric PZT(53/47) Film by Metalorganic Decomposition for Micro electro mechanical Device (Microelectromechnical system 소자 제작을 위한 유기금속분해법에 의한 압전성 PZT(53/47)박막의 증착)

  • 윤영수;정형진;신영화
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.458-464
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    • 1998
  • This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

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Aerosol Deposition Nozzle Design for Uniform Flow Rate: Divergence Angle and Nozzle Length

  • Kim, Jae Young;Kim, Young Jin;Jeon, Jeong Eun;Jeon, Jun Woo;Choi, Beom Soo;Choi, Jeong Won;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.38-44
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    • 2022
  • Plasma density in semiconductor fabrication equipment becomes higher to achieve the improved the throughput of the process, but the increase of surface corrosion of the ceramic coated chamber wall has been observed by the increased plasma density. Plasma chamber wall coating with aerosol deposition prefer to be firm and uniform to prevent the potential creation of particle inside the chamber from the deformation of the coating materials, and the aerosol discharge nozzle is a good control factor for the deposited coating condition. In this paper, we investigated the design of the nozzle of the aerosol deposition to form a high-quality coating film. Computational fluid dynamics (CFD) study was employed to minimize boundary layer effect and shock wave. The degree of expansion, and design of simulation approach was applied to found out the relationship between the divergence angle and nozzle length as the key parameter for the nozzle design. We found that the trade-off tendency between divergence angle and nozzle length through simulation and quantitative analysis, and present the direction of nozzle design that can improve the uniformity of chamber wall coating.

A Methodology for Justification and Optimization of Countermeasures for Milk After a Nuclear Accident and Its Application (원자력 사고후 우유에 대한 비상대응의 정당화/최적화를 위한 방법론 및 적용연구)

  • Hwang, Won-Tae;Han, Moon-Hee;Kim, Eun-Han;Cho, Gyu-Seong
    • Journal of Radiation Protection and Research
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    • v.23 no.4
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    • pp.243-249
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    • 1998
  • The methodology for justification and optimization of the countermeasures related with contamination management of milk was designed based on the cost and benefit analysis. The application results were discussed for the deposition on August 15, when pasture is fully developed in Korean agricultural conditions. A dynamic food chain model DYNACON was used to estimate the time-dependent radioactivity of milk after the deposition. The considered countermeasures are (1) the ban of milk consumption (2) the substitution of clean fodder, which are effective in reducing the ingestion dose as well as simple and easy to carry out in the first year after the deposition. The total costs of the countermeasures were quantitatively estimated in terms of cost equivalent of doses and monetary costs. It is obvious that a fast reaction after the deposition is an important factor in cost effectiveness of the countermeasures. In most cases, the substitution of clean fodder was more effective countermeasure than the ban of consumption. A fast reaction after the deposition made longer justifiable/optimal duration of the countermeasure.

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