Micromorph Schottky Silicon Solar Cells

  • Kim, Joon-Dong (Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM)) ;
  • Han, Chang-Soo (Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials (KIMM)) ;
  • Yun, Ju-Hyung (Department of Electrical Engineering, State University of New York) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Yun-Chang (Measurement and Analysis Division, National Nanofab Center (NNFC))
  • Published : 2010.02.17

Abstract

Thin Si films were grown by a plasma-enhanced chemical vapor deposition (PECVD, SNTEK, Korea) system. Two different deposition condition were applied and formed a fully amorphous Si (a-Si) film and a micromorph mixing of microcrystalline Si (mc-Si) and a-Si film. Under one sun illumination, the micromorph device provided the enhanced open circuit voltage and fill factor values. It presents the fabrication of the micromorph Si film and the a-Si film by modulating a deposition condition. The performances of the Si thin film Schottky solar cells are discussed.

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