• Journal of Environmental Science International
• /
• v.9 no.4
• /
• pp.311-318
• /
• 2000

To improve $CO_2$pemselectivity, a modified silica membrane was prepared by chemical vapor deposition with tetraethoxysilane(TEOS)-ethanol-water, and TEOS-ethanol-water-HCI solution at 300-$600^{\circ}C$. The silica was effectively deposited in the mesopores of a ${\gamma}$-alumina film coated on a porous $\alpha$-alumina tube by evacuating the reactants through the porous wall. In this membrane, $CO_2$interacts, to some extent, with the pore wall, and $CO_2$/$N_2$selectivity then exceeds the value of the Knudsen diffusion mechanism, while the membrane derived from TEOS alone has no $CO_2$selectivity. The silica membrane prepared from TEOS-ethanol-water-HCI solution showed that $CO_2$permeance was $2.5$\times$10^{-7}mol/s^{-1}.m^{-2}.Pa^{-1} at 30{\circ}C$ and $CO_2$/$N_2$selectivity was approximately 3. The $CO_2$permeance and selectivity was improved by enlarging the surface diffusion with modification of chemical affinity of the silica pores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.332-333
• /
• 2009

In this paper, we have deposited silicon nitride films by plasma-enhanced chemical vapor deposition (PECVD). For films deposited under optimized conditions, the mechanism of plasma-enhanced vapor deposition of silicon nitride is studied by varying process parameters such as rf power, gas ratio, and chamber pressure. It was demonstrated that organic light-emitting diode(OLEDs) were fabricated with the inorganic passivation layer processing. We have been studied the inorganic film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation layer, we have carried out the fabrication of OLEDs and investigate with luminescence and MOCON.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.1
• /
• pp.132-138
• /
• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Electrical & Electronic Materials
• /
• v.11 no.10
• /
• pp.60-65
• /
• 1998

Deposition conditions, surface morphology, and electrical properties of polyamic acid alkylamine salts (PAAS) Langmuir-Blodgett(LB) films have been investigated through a study of surface pressure-area $\pi$-A isotherms, AFM (atomic force microscopy), and current-voltage characteristics. To obtain the optimum conditions of film deposition, the $\pi$-A isotherms were examined by varying temperature, barrier moving speed, dipping speed, spreading amount of solution etc. The Z-type LB films were made at the surface pressure of 5 mN m-1 and 25 mN m-1 for the AFM study; the former surface pressure forms the gas phase and the latter one forms the solid phase. The LB film made in the gas phase show domains with a size of about 200 A diameter and 70 A height. However, the LB films made in the solid phase show a very smooth surface with 2 A surface roughness. In the current-voltage characteristics measured along the perpendicular direction of the films, ohmic conduction has been observed below 105 V cm-1 and the calculated electrical conductivity is about 10-13 S cm-1. Nonohmic conduction has been observed above = 10-11 V cm and the conduction mechanism can be explained by the Schottky effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.935-938
• /
• 2002

The degree of contamination in outdoor insulation system is one of the most importance factor to determine the level of insulation, and the salt is known as the most dangerous contaminants in the most region of the world. In a macroscopic point of view, as shown through the preceding study, the generation and deposition of salt contaminants has a great relation with the geographical conditions and the meteorological conditions, such as, wind velocity, wind direction, precipitation and so forth. However, in the aspect of microscopic analysis, the pollution mechanism has a great relation with aerodynamic properties of insulator, originated from the profile of insulators, and the non-uniform deposition is unevitable. So, in this investigation, we had make a experiment to seize the electrical properties of non-uniformly contaminated insulator. The results of this investigation could be used as a good groundwork in the determination of outdoor insulation design.

• Progress in Superconductivity and Cryogenics
• /
• v.17 no.3
• /
• pp.1-4
• /
• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.5
• /
• pp.63-68
• /
• 1999

In this paper, the correlation between the growth mechanism and the optical property in GaN films grown by low-pressure metalorganic chemical vapor deposition was characterized using room temperature cathodoluminescence spectroscopy. An intense near band-edge emission, 364nm, and deep-level emission, 550nm, were observed. The intensity of 364nm peak was increased with increasing the beam current. Also the peak position of 364nm emission was red-shifted and the intensity of 550nm peak was increased with increasing the accelerating voltage. It shows that the deep-level emission is strongly associated with crystalline defects in the GaN at early stage. The relationship between the microstructure and the deep level emission observed by scanning electron microscope images and cathodoluminescence spectra was carefully analyzed.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.4 s.37
• /
• pp.345-349
• /
• 2005

Low resistive ($300{\mu}{\Omega}$-cm) W-C-N films have been deposited on tetraethylorthosilicate (TEOS) interlayer dielectric by atomic layer deposition (ALD) with $WF_6-N_2-CH_4$ gas. The exposure cycles of $N_2$ and $CH_4$ are synchronized with pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism and keep constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles. As a diffusion barrier for Cu interconnection the W-C-N films maintain amorphous phase and Cu inter-diffusion is not occurred even at $800^{\circ}C$ for 30 min.

• Journal of Advanced Marine Engineering and Technology
• /
• v.18 no.2
• /
• pp.54-63
• /
• 1994

Mg thin films were prepared on SPCC(cold-rolled steel) substrates by vasuum evapoaration and ion-plating. The influence of argon gas pressure and substrates bias voltage on the crystal orientation and morphology of the film was determined by using X-ray diffraction and scanning electron micrography (SEM), respectively. And the effect of crystal orientation and morphology of the Mg thin films on corrosion behavior was estimated by measuring the anodic polarization curves in deaerated 3% NaCl solution. The crystal orientation of the Mg films deposited at high argon gas pressure exhibited a (002) preferred orientation, regardless of the substrate bias voltage. Film morphology changed from a columnar to a granular structure with the increase of argon gas pressure. The morphology of the films depended not only on argon gas pressure but also bias voltage ; i.e., the effect of increasing bias voltage was similar to that of decreasing argon gas pressure. The influences of argon gas pressure and bias voltage were explained by applying the adsorption inhibitor theory and the sputter theory. And also, this showed that the corrosion resistance of the Mg thin films can be changed by controlling the crystal orientaton and morphology.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.211.1-211.1
• /
• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.