• 한국진공학회지
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• 제1권1호
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• pp.153-161
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• 1992

A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.328-334
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• 2008

The effects of catalyst preparation on the reaction route and the mechanism of biphenol (BP) hydrogenation, which consists of a long series-reaction, were studied. Pd/C catalysts were prepared by incipient wetness method and precipitation and deposition method. The reaction behaviors of the prepared catalysts and a commercial catalyst along with the final product distributions were very different. The choice of the catalyst preparation conditions during precipitation and deposition including the temperature, pH, precursor addition rate, and reducing agent also had significant effects. The reaction behaviors of the catalysts were interpreted in terms of catalyst particle size, metal distribution, and support acidities.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.741-746
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• 2009

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.505-509
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• 2013

A low temperature ($65^{\circ}C$) thermal deposition process was developed for depositing a silver coating on thermally sensitive polymeric substrates. This low temperature deposition was achieved by chemical reduction of a silver alkylcarbamate complex with latent reducing agent. The effects of acetol as a latent reducing agent for the silver 2-ethylhexylcarbamate (Ag-EHCB) complex and their blend solutions were investigated in terms of reducing mechanism, and the size and shape of silver nanoparticles (Ag-NPs) as a function of reduced temperature and time, and PVP stabilizer concentration were determined. Low temperature deposition was achieved by combining chemical reduction with thermal heating at $65^{\circ}C$. A range of polymer film, sheet and molding product was coated with silver at thicknesses of 100 nm. The effect of process parameters and heat treatment on the properties of silver coatings was investigated.

• 한국표면공학회지
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• 제29권5호
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.109-124
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• 2023

For decades, sputtering as a physical vapor deposition (PVD) method has been a widely used technique for film coating processes. The sputtering enables oxides, metals, alloys, nitrides, etc to be deposited on a wide variety of substrates from silicon wafers to polymer substrates. Meanwhile, transparent conductive oxides (TCOs) have played important roles as electrodes in electrical applications such as displays, sensors, solar cells, and thin-film transistors. TCO films fabricated through a sputtering process have a higher quality leading to an improved device performance than other films prepared with other methods. In this review, we discuss the mechanism of sputtering deposition and detail the TCO materials. Related technologies (processing conditions, materials, and applications) are introduced for electrical applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.29-35
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• 2004

암모니아 펄스플라즈마를 이용하여 $WF_6$ 가스와 $NH_3$ 가스를 교대로 흘려줌으로써 Si 기판위에 질화텅스텐 확산방지막을 증착하였다. $WF_6$ 가스는 Si과 반응하여 표면침식이 과도히 발생하였으나 암모니아 ($NH_3$)가스를 펄스 플라즈마를 인가하여 $WF_6$와 같이 사용하면 Si 표면을 질화처리 함으로써 표면침식을 막아주며 질화텅스텐 박막을 쉽게 증착할 수 있었다. 그 이유는 암모니아 가스의 분해를 통한 Si 기판의 흡착을 용이하게 하여 질화텅스텐 박막 증착이 가능하기 때문이다. 이러한 증착 미케니즘과 암모니아 펄스 플라즈마 효과에 대하여 조사하였다.

• 한국화재소방학회논문지
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• 제21권2호
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• pp.64-73
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• 2007

호흡기 내에서 유해물질의 체내흡수 및 방어특성은 영역별로 다르며 흡입연기의 장 단기 인체 유해성은 연기의 호흡기 내 침착위치 및 침착밀도와 밀접한 관계를 가지고 있다. 이 연구에서는 미소부피 위치 추적법을 이용한 입자침착율 계산 기법을 사용하여 휴식 및 가벼운 운동에 해당하는 호흡조건별로 또한 구강 및 비강 호흡별로 각 입자크기에 대하여 호흡기 각 영역별로 단위 면적당 침착분율 등 침착 특성을 구하였다. 이 결과는 연기에 흡착된 유해물질의 체내 흡수량 산정 등에 이용되어 연기의 인체 유해성 판정에 도움을 줄 수 있을 것으로 판단된다.