• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.980-986
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• 2009

In a triple-layered structure of ITO/N,N'-diph enyl-N,N'bis(3-methylphenyl)-1,1' - biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/Al device, we have studied the electrical and optical characteristics of organic light-emitting diodes(OLEDs) depending on the deposition condition of BCP layer. Several different sizes of holes on boat and several different deposition rates were employed in evaporating the organic materials. And then, electrical properties of the organic light-emitting diodes were measured and the performance of the devices was analyzed. It was found that the hole-size of crucible boat and the evaporation rate affect on the surface roughness of BCP layer as well as the performance of the device. When the hole-size of crucible boat and the deposition rate of BCP are 1.2 mm and $1.0\;{\AA}/s$, respectively, average surface roughness of BCP layer is lower and the efficiency of the device is higher than the ones made with other conditions. From the analysis of current density-luminance-voltage characteristics of a triple layered device, we divided the conductive mechanism by four region according to applied voltage. So we have obtained a coefficient of ${\beta}_{ST}$ in schottky region is $3.85{\times}10^{-24}$, a coefficient of ${\beta}_{PF}$ in Poole-Frenkel region is $7.35{\times}10^{-24}$, and a potential barrier of ${\phi}_{FN}$ in Fower-Nordheim region is 0.39 eV.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Water Engineering Research
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• v.3 no.3
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• pp.155-162
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• 2002

This study presents the theoretical approach for volume concentration, velocity profile, and granular discharge on the fluid-granule mixed flow downstream of the scour hole at the outlet of the hydraulic structure. Concept of dilatant model was applied for the stress-strain relationships of fluid-granule mixed flow since the flow downstream of the scour hole corresponds to debris flow, where momentum transfers through particle collisions. Mathematical formulations were derived using momentum equation and stress-strain relation of the fluid-granule mixture. Velocity profile under the assumption of uniform concentration over flowing layer showed the downward convex type. Deposition angle of downstream hump was found to be a function of an upstream slope angle, a dynamic friction angle and a volume concentration irrespective of flow itself, Granular discharge and the overflow depth were obtained with given values of inflow rates. Experimental results showed relatively good agreements with theoretical ones.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.150.2-150.2
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• 2015

In this study, we analyzed the electric and optical characteristics by using various deposition rate ($0.5{\AA}$, $1.0{\AA}$ and $1.5{\AA}/s$) in order to enhance the performance in organic light-emitting devices (OLED). The organic multi-layer structures were deposited with NPB ($500{\AA}$ as hole transport layer), Alq3 ($600{\AA}$ as electron transport layer and emission layer) and LiF ($8{\AA}$ as electron injection layer) via SUNIC PLUS200 on Glass/ITO substrates. In this experiment, we examined the relationship between porous state of organic deposition and mobility of the organic materials. Among the three deposition rates, $0.5{\AA}/s$ achieved the highest performance of (10,786cd/m2, 4.387cd/A) comparing with that of $1{\AA}/s$ (7,779cd/m2, 3.281cd/A) and $1.5{\AA}/s$ (5,167cd/m2, 2.693cd/A). We confirmed that low deposition rate helps to arrange organic materials densely and to move easily another atomic location using inter-chain transporting by orbital overlap.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.49-55
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• 2023

The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10^-4 Ω∙cm, the hole mobility of 51.28 cm²/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.21 no.4
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• pp.517-529
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• 2023

The objectives of this paper are: (1) to conduct the thermal analyses of the disposal cell using COMSOL Multiphysics; (2) to determine whether the design of the disposal cell satisfies the thermal design requirement; and (3) to evaluate the effect of design modifications on the temperature of the disposal cell. Specifically, the analysis incorporated a heterogeneous model of 236 fuel rod heat sources of spent nuclear fuel (SNF) to improve the reality of the modeling. In the reference case, the design, featuring 8 m between deposition holes and 30 m between deposition tunnels for 40 years of the SNF cooling time, did not meet the design requirement. For the first modified case, the designs with 9 m and 10 m between the deposition holes for the cooling time of 40 years and five spacings for 50 and 60 years were found to meet the requirement. For the second modified case, the designs with 35 m and 40 m between the deposition tunnels for 40 years, 25 m to 40 m for 50 years and five spacings for 60 years also met the requirement. This study contributes to the advancement of the thermal analysis technique of a disposal cell.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.105-109
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• 2008

Electrical characteristics of organic light-emitting diodes were investigated by varying a hole-size in evaporation boat in the device structure of ITO/tris(8-hydroxyquinoline) aluminum$(Alq_3)$/Al. The device was manufactured using a thermal evaporation under a base pressure of $5{\times}10^{-6}$ Torr. The $Alq_3$ emitting organics were evaporated to be a thickness of 100 nm at a deposition rate of $1.5{\AA}/s$. A cylindrical-shaped evaporation boat was made out of stainless steel with a small size of hole on top of the boat. Several evaporation boats were made having a different hole size on top; 0.8 mm, 1.0 mm, 1.5 mm, and 3.0 mm. We found that when the hole size on top of the evaporation boat is 1.0 mm, the average roughness is rather smoother compared to the other ones. Also, luminance and external quantum efficiency are superior to the others. Compared to the ones from the devices made with the hole-size of 0.8 mm boat. The luminance and external quantum efficiency of the device made with the hole-size of 1.0 mm boat were improved by a factor of seventy and thirty three, respectively. Also operating voltage is reduced to 2 V.

• Water Engineering Research
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• v.2 no.3
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• pp.179-185
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• 2001

The time consuming and expensive nature of experimental research on scouring processes caused by flowing water makes it attractive to develop numerical tools for the predication of the interaction of the fluid flow and the movable bed. In this paper the numerical simulation of scour by a wall jet is presented. The flow is assumed to be two-dimensional, and the alluvium is cohesionless. The solution process, repeated at each time step, involves simulation of a turbulent wall jet flow, solution of the convection-diffusion of sand concentration, and prediction of the bed deformation. For simulation of the jet flow, the governing equations for momentum, mass balance and turbulent parameters are solved by the finite volume method. The SIMPLE scheme with momentum interpolation is used for pressure correction. The convection-diffusion equation is solved for sediment concentration. A boundary condition for concentration at the bed, which takes into account the effect of bed-load, is implemented. The time rate of deposition and scour at the bed is obtained by solving the continuity equation for sediment. The shape and position of the scour hole and deposition of the bed material downstream of the hole appear realistic.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.185-188
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• 2001

In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.