• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.36-39
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• 2014

We report on the superconducting and structural characteristics of Pb-based alloy ($Pb_{0.9}In_{0.1}$, $Pb_{0.8}In_{0.2}$ and $Pb_{0.85}Bi_{0.15}$) thin films, depending on the film deposition rate. The maximum critical magnetic field strength of $Pb_{0.85}Bi_{0.15}$ is almost six times larger than that of $Pb_{0.9}In_{0.1}$, and more rapid growth of the film enhances the critical magnetic field strength even for the same alloy material. Scanning electron microscopy inspection indicates that lower deposition rate condition is vulnerable to the formation of void structure in the film. Topographic images using atomic force microscopy are useful to optimize the deposition condition for the growth of smooth superconducting film. Our work can be utilized for future studies on hybrid superconducting devices using low-dimensional nanostructures.

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.18-22
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• 2017

Addition of $BaSnO_3$ (BSO) to $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) is reported to enhance the flux pinning property of GdBCO thick films. To investigate the effect of growth condition on the pinning properties, 700 nm-thick BSO-added GdBCO films deposited with varying temperatures and growth rates were prepared by using a pulsed laser deposition method. As the deposition temperature increases, the critical current density and the pinning force density show an improved field dependence up to $750^{\circ}C$ due to the increase in the formation of the a-axis growth and the BSO nanostructures. The films deposited at higher temperatures show degraded surfaces and as a result, degraded pinning behaviors. For the change in growth rate, the critical current density and the pinning force increase as the repetition rate increase at low magnetic fields, but this behavior is reversed in high magnetic fields. These results indicate that the film growth conditions significantly affect the formation of BSO nanostructures and the pinning properties of BSO-added GdBCO films.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.21-30
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• 1989

Titanium Nitride (TiN) was deposited onto the SKH9 tool steels by chemical vapor deposition (CVD) using a gaseous mixture of TiCl4, N2, and H2. The effects of the deposition temperature and input gas composition on the deposition rate, microstructure, preferred orientation, microhardness and wear resistance of TiN deposits were studied. The experimental results showed that the TiN deposition is thermally activated process with an apparent activation energy of about 27Kcal/mole in the temperature range between 1200$^{\circ}$K and 1400$^{\circ}$K. As H2/N2 gas input ratio increased, the deposition rate increased, showed maximum at H2/N2 gas input ratio of 1.5 and then decreased. Mechanical properties such as microhardness and wear resistance have close relation with the microstructure and preferred orientation of TiN deposits. It is suggested that the equiaxed structure with random orientation increases the microhardness and wear resistance of TiN deposits.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.351-351
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• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.477-484
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• 1994

The yttria stabilized zirconia(YSZ) thin films for solid oxide fuel cell (SOFC) were fabricated by an electrochemical vapor deposition(EVD) technique using YCl3+ZrCl4+H2O gas system. The YSZ films were deposited under reduced pressure at the temperature of 1000~120$0^{\circ}C$ on the porous alumina substrates. The deposition rate, chemical composition and growth morphology were investigated by SEM, XRD, EDS. The growth rates of the films obeyed a parabolic rate law, representing that the growing process is controlled by an electrochemical transport through the YSZ film. The Y2O3 content of the films was about 10 mol%, equal to the composition of metal chloride reactant gases, approximately. The YSZ films were highly dense, the growing features showed columnar structure and surface morphologies were changed with the EVD conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.503-504
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2)superconducting thin films have been fabricated by atomic layer-by-layer deposition at an ultra low growth rate using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.185-188
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• 2001

In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1493-1495
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• 1994

Study on the effect of hydrogen flow rate and $CH_4$ concentration in deposition of the diamond thin films by MWPECVD diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPE CVD, and identified by SEM, XRD and Raman spectroscopy. The flow rate of hydrogen didn't affect the surface morphology and crystallity of diamond thin films, but did slightly affect growth rate. When the concentration of oxygen was fixed at 40%, the growth rate and crystallity of diamond thin films were gradually improved according to increasment of concentration of $CH_4$ but growth rate of the thin films showed peak at 7% and the crystallity showed peak at 6%.