• Title/Summary/Keyword: Deposition Growth Rate

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Polymer Films with Electrospray Deposition, model and experiment

  • Rietveld Ivo B.;Kobayashi Kei;Yamada Hirofumi;Matsushige Kazumi
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.284-284
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    • 2006
  • Electrospray deposited films of poly(vinylidene fluoride) were prepared with various conditions. A model has been developed, which provides the state of the electrosprayed droplet at impact. With a combination of the experimental films and the model calculations, it can be shown that growth rate, the increase of the sprayed solution on the substrate per second, defines the film morphology in electrospray deposition. Growth rate indicates which factors play the main role in the film formation process. The most important factors are liquid flow, surface tension and shear rate. The model can calculate the shear rate and it is shown that PVDF, and most likely polymers in general, has a large range of growth rates, where the morphology only depends on the shear rate of the depositing droplet. This method can also be used to describe electrospray deposition of other compounds.

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A Study on the Diamond Thin Films Synthesized by Microwave Plasma Enhance Chemical Vapor Deposition (마이크로웨이브 플라즈마 화학기상성장법에 의한 다이아몬드 박막의 합성에 관한 연구)

  • 이병수;이상희;박상현;유동현;이백수;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.809-814
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    • 1998
  • In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

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Effect of deposition on the properties of diamond thin films synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition (MPCVD에 의해 합성된 다이아몬드 박막 특성에 대한 증착조건의 영향)

  • Lee, Byoung-Soo;Lee, Duch-Chool
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.1
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    • pp.33-38
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    • 2002
  • In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

Expanding Thermal Plasma CVD of Silicon Thin Films and Nano-Crystals: Fundamental Studies and Applications

  • Sanden, Richard Van De
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.78-78
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    • 2012
  • In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

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Residence Time Effect on the Growth of ZrC by Low Pressure Chemical Vapor Deposition (저압화학기상증착법을 이용한 ZrC 성장에 잔류시간이 미치는 영향)

  • Park, Jong-Hoon;Jung, Choong-Hwan;Kim, Do-Jin;Park, Ji-Yeon
    • Journal of the Korean Ceramic Society
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    • v.45 no.5
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    • pp.280-284
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    • 2008
  • In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.

Recent Studies of Laser Metal 3D Deposition with Wire Feeding (와이어 송급 레이저 금속 3차원 적층 연구동향)

  • Kam, Dong-Hyuck;Kim, Young-Min;Kim, Cheolhee
    • Journal of Welding and Joining
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    • v.34 no.1
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    • pp.35-40
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    • 2016
  • Recent developments of Laser metal 3D deposition with wire feeding are reviewed which provide an alternative to powder feeding method. The wire feeding direction, angle and position as well as laser power, wire feeding rate, and deposition speed are found to be key parameters to make quality deposition with high throughput. When compared with the powder feed, the wire feed shows higher material efficiency, higher deposition rate, and smoother surface. Large elongated columnar grains which have epitaxial growth across deposit layers are observed in deposit cross sections. The growth direction is parallel to the thermal gradient during the deposit process. Tensile properties are found to be dependent on the direction due to the anisotropic deposit property. A real-time feedback control is demonstrated to be effective to improve the deposition stability.

Optical and electrical property of Indium-doped ZnO (IZO) grown by Atomic Layer Deposition (ALD) using Et2InN(TMS)2 as In precursor and H2O oxidant

  • Jo, Yeong-Jun;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.421.1-421.1
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    • 2016
  • We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

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A study on the Poly-$Si_{1-x}Ge_x$ thin film deposition (I) Variation of the deposition rate and Ge composition with deposition parameters (다결정 $Si_{1-x}Ge_x$박막 증착에 관한 연구(I) 증착변수에 따른 증착속도 및 Ge조성 변화)

  • 이승호;어경훈;소명기
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.578-588
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    • 1997
  • Poly-$Si_{1-x}Ge_x$ films on oxidized Si wafer were prepared by rapid thermal chemical vapor deposition using the $SiH_4$ and $GeH_4$ gaseous mixture at various deposition conditions. The deposition temperature, $SiH_4\;: GeH_4$ flow ratio and pressure were varied from 400 to $600^{\circ}C$, 1 : 0.1-2 : 1 and 1 to 50 torr, respectively. In this work, we have investigated the change of Ge composition of poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters and the effect of Ge composition on the deposition rate. From the experimental results, it was observed that the deposition rate increased with increasing deposition temperature and Ge composition. On the other hand, the Ge composition decreased with increasing temperature. As the deposition pressure increased, the deposition rate and Ge composition were increased linearly to 10 torr but increased slowly above it, which has been attributed to the slower rate of surface reaction than mass transfer.

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Growth Characteristics of Thick $\textrm{SiO}_2$ Using $\textrm{O}_3$/TEOS APCVD ($\textrm{O}_3$/TEOS를 이용한 후막 $\textrm{SiO}_2$의 성장특성 연구)

  • Lee, U-Hyeong;Choe, Jin-Gyeong;Kim, Hyeon-Su;Yu, Ji-Beom
    • Korean Journal of Materials Research
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    • v.9 no.2
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    • pp.144-148
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    • 1999
  • We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

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Atomic Layer Deposition of Al2O3 Thin Films Using Dimethyl Aluminum sec-Butoxide and H2O Molecules

  • Jang, Byeonghyeon;Kim, Soo-Hyun
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.430-437
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    • 2016
  • Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.