• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.253-257
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• 2015

The implanting of metal products is performed with numerous surface treatments because of toxicity and adhesion. Recently, the surface modification of metal products has been actively studied by coating the surface of the TiC or TiN film. We prepared a Ti(10%)Ag Target which may be used in dental oral material by, using the AIP(arc ion plating) system TiAgN coating layer that was deposited on Ti g.23. The purpose of this study was to establish the optimal bias voltage conditions of the coated TiAgN layer formed by the AIP process. The TiAgN coatings were prepared with different bias voltage parameters (0V to -500V) to investigate the effect of bias voltage on their mechanical and chemical properties. The SEM(scanning electron microscope), EDS(energy dispersive X-ray spectrometer), XRD(X-ray diffraction), micro-hardness, and potentiodynamic polarization were measured and the surface characteristics of the TiAgN coating layers were evaluated. The TiAgN coating layer had different mechanical characteristics based on the bias voltage, which also showed differences in thickness and composition.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.95.1-95.1
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• 2012

Very High Temperature gas cooler Reactor (VHTR) has been considered as one of the most promising nuclear reactor because of many advantages including high inherent safety to avoid environmental pollution, high thermal efficiency and the role of secondary energy source. The TRISO coated fuel particles used in VHTR are composed of 4 layers as OPyC, SiC, IPyC and buffer PyC. The significance of CVD-SiC coatings used in tri-isotropic(TRISO) nuclear coated fuel particles is to maintain the strength of the whole particle. Various methods have been proposed to evaluate the mechanical properties of CVD-SiC film at room temperature. However, few works have been attempted to characterize properties of CVD-SiC film at high temperature. In this study, micro tensile system was newly developed for mechanical characterization of SiC thin film at elevated temperature. Two kinds of CVD-SiC films were prepared for micro tensile test. SiC-A had [111]-preferred orientation, while SiC-B had [220]-preferred orientation. The free silicon was co-deposited in SiC-B coating layer. The fracture strength of two different CVD-SiC films was characterized up to $1000^{\circ}C$.The strength of SiC-B film decreased with temperature. This result can be explained by free silicon, observed in SiC-B along the columnar boundaries by TEM. The presence of free silicon causes strength degradation. Also, larger Weibull-modulus was measured. The new method can be used for thin film material at high temperature.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.506-510
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• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.229-233
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• 2003

Boron-Carbon-Nitrogen (B-C-N) system is an attractive ternary material since it has not only an extremely high hardness but also a number of other prominent characteristics such as chemical inertness, elevated melting point, and low thermal expansion. In this paper, the corrosion behavior of B-C-N thin films in aqueous solution was investigated B-C-N films with different composition were deposited on a platinum plate by magnetron sputtering in the thickness range of 150-280 nm. In order to understand effect of pH of solutions, $BC_{2.\;4}N$ samples were immerged in 1M HCl, 1M NaCl, and 1M NaOH solution at 298k, respectively. BCN samples with different carbon contents were exposed to 1M NaOH solutions to investigate effect of chemical composition on corrosion resistance. Corrosion rates of samples were measured by ellipsometry, From results, optical constant of $BC_{2,\;4}N$ films was found to be $N_2=2.110-0.295i$. The corrosion rates of $Bi_{1.\;0}C_{2.\;4}N_{1.\;0}$ films were NaOH>NaCl>HCl in orders. With increasing carbon content in B-C-N films, the corrosion resistance of B-C-N films was enhanced. The lowest corrosion rate was obtained for $B_{1.\;0}C_{4.\;4}N_{1.\;9}$ film.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.128-136
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• 2014

In the present study, we successfully developed an eco-friendly chemical etching solution and proper condition for plating on ABS material. The mechanism of forming Ni plating layer on ABS substrate is known as following. In general, the etching solution used for the etching process is a solution of chromic acid and sulfuric acid. The etching solution is given to the surface resulting in elution of butadiene group, so-called anchor effect. Such a rough surface can easily adsorb catalyst resulting in the increase of adhesion between ABS substrate and Ni plating layer. However a use of chromic acid is harmful to environment. It is, therefore, essential to develop a new alternative solution. In the present study, we proposed an eco-friendly etching solution composed of potassium permanganate, sulfuric acid and phosphoric acid. This solution was testified to observe the surface microstructure and the pore size of electrical Ni plating layer, and the adhesive correlation between deposited layers fabricated by electro Ni plating was confirmed. The result of the present study, the newly developed, eco-friendly etching solution, which is a mixture of potassium permanganate 25 g/L, sulfuric acid 650ml/L and phosphoric acid 250ml/L, has a similar etching effect and adhesion property, compared with the commercially used chromium acid solution in the condition at $70^{\circ}C$ for 5 min.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.273-273
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• 2014

Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.

• Journal of Periodontal and Implant Science
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• v.27 no.1
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• pp.45-59
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• 1997

Platelet-derived growth factor(PDGF) has been shown to play an important role in periodontal regeneration. The purpose of the present study was to examine the distribution of PDGF in experimentally created periodontal intrabony defects after flap surgery with various bone graft materials. Six healthy mongrel dogs were used in this study. Three-wall bony defects were created in maxillary and mandibular premolars, inflammation induced by wire ligation and injection of impression material into the defects. Eight weeks later, the experimental lesions thus obtained were treated by plain flap surgery(control group), flap surgery plus autogenous bone graft(autogenous bone group), flap surgery plus Biocoral graft(Biocoral group), or flap surgery plus bioglass graft(bioglass group), which were randomly assigned to the defects. After 4, H, and 12 weeks postoperatively, 2 dogs were sacrificed at each time and 1he specimens were taken for histological examinations and immunohistochemical examinations for PDGF. In the control defects the amount of new bone formation was minimal. In the autogenous bone and Biocoral group new bone was deposited around implanted particles and the amount of new bone was increased with time. A large number of bioglass particles exibited a central excabation and bone formation could be observed in the central excabation as well as around the particles. The expression of PDGF was low in the control group. The expression of PDGF in Biocoral group was increased at 1, H week, but decreased at 12 week. The increased PDGF expression in autogenous bone and bioglass group was maintained to the end of the experiment.