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Lithologic and Structural Controls and Geochemistry of Uranium Deposition in the Ogcheon Black-Slate Formation (옥천대(沃川帶) 우라늄광층(鑛層)의 구조규제(構造規制) 및 지구화학적(地球化學的) 특성연구(特性硏究))

  • Lee, Dai Sung;Yun, Suckew;Lee, Jong Hyeog;Kim, Jeong Taeg
    • Economic and Environmental Geology
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    • v.19 no.spc
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    • pp.19-41
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    • 1986
  • Structural, radioactive, petrological, petrochemical, mineralogical and stable isotopic study as well as the review of previous studies of the uranium-bearing slates in the Ogcheon sequence were carried out to examine the lithological and structural controls, and geochemical environment in the uranium deposition in the sequence. And the study was extended to the coal-bearing formation (Jangseong Series-Permian) to compare the geochemical and sedimentologic aspects of uranium chemistry between Ogcheon and Hambaegsan areas. The results obtained are as follows: 1. The uranium mineralization occurs in the carbonaceous black slates of the middle to lower Guryongsan formation and its equivalents in the Ogcheon sequence. In general, two or three uranium-bearing carbonaceous beds are found with about 1 to 1.5km stratigraphic interval and they extend from Chungju to Jinsan for 90km in distance, with intermittent igneous intrusions and structural Jisturbances. Average thickness of the beds ranges from 20 to 1,500m. 2. These carbonaceous slate beds were folded by a strong $F_1$-fold and were refolded by subsequent $F_1$-fold, nearly co-axial with the $F_1$, resulting in a repeated occurrence of similar slate. The carbonaceous beds were swelled in hing zones and were shrinked or thined out in limb by the these foldings. Minor faulting and brecciation of the carbonaceous beds were followed causing metamorphism of these beds and secondary migration and alteration of uranium minerals and their close associations. 3. Uranium-rich zones with high radioactive anomalies are found in Chungju, Deogpyong-Yongyuri, MiwonBoun, Daejeon-Geumsan areas in the range of 500~3,700 cps (corresponds to 0.017~0.087%U). These zones continue along strike of the beds for several tens to a few hundred meters but also discontinue with swelling and pinches at places that should be analogously developed toward underground in their vertical extentions. The drilling surveyings in those area, more than 120 holes, indicate that the depth-frequency to uranium rich bed ranging 40~160 meter is greater. 4. The features that higher radioactive anomalies occur particularly from the carbonaceous beds among the argillaceous lithologic units, are well demonstrated on the cross sections of the lithology and radioactive values of the major uranium deposits in the Ogcheon zone. However, one anomalous radioactive zone is found in a l:ornfels bed in Samgoe, near Daejeon city. This is interpreted as a thermal metamorphic effect by which original uranium contents in the underlying black slate were migrated into the hornfels bed. 5. Principal minerals of the uranium-bearing black slates are quartz, sericite, biotite and chlorite, and as to chemical composition of the black slates, $Al_2O_3$ contents appear to be much lower than the average values by its clarke suggesting that the Changri basin has rather proximal to its source area. 6. The uranium-bearing carbonaceous beds contain minor amounts of phosphorite minerals, pyrite, pyrrhotite and other sulfides but not contain iron oxides. Vanadium. Molybdenum, Barium, Nickel, Zirconium, Lead, Cromium and fixed Carbon, and some other heavy metals appear to be positive by correlative with uranium in their concentrations, suggesting a possibility of their genetic relationships. The estimated pH and Eh of the slate suggests an euxenic marine to organic-rich saline water environment during uranium was deposited in the middle part of Ogcheon zone. 7. The Carboniferous shale of Jangseong Series(Sadong Series) of Permian in Hambaegsan area having low radioactivity and in fluvial to beach deposits is entirely different in geochemical property and depositional environment from the middle part of Ogcheon zone, so-called "Pibanryong-Type Ogcheon Zone". 8. Synthesizing various data obtained by several aspects of research on uranium mineralization in the studied sequence, it is concluded that the processes of uranium deposition were incorporated with rich organic precipitation by which soluble uranyl ions, $U{_2}^{+{+}}$ were organochemically complexed and carried down to the pre-Ogcheon sea bottoms formed in transitional environment, from Red Sea type basin to Black Sea type basin. Decomposition of the organic matter under reducing conditions to hydrogen sulfide, which reduced the $UO{_2}^{+2}$ ions to the insoluble uranium dioxide($UO_2$), on the other side the heavy metals are precipitated as sulfides. 9. The EPMA study on the identification of uraninite and others and the genetic interpretation of uranium bearing slates by isotopic values of this work are given separately by Yun, S. in 1984.

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Fluid Inclusion and Stable Isotope Studies of the Kwangsin Pb-Zn Deposit (광신 연 - 아연 광상의 유체포유물 및 안정동위원소 연구)

  • Choi, Kwang-Jun;Yun, Seong-Taek;So, Chil-Sup
    • Economic and Environmental Geology
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    • v.30 no.6
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    • pp.505-517
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    • 1997
  • Lead and zinc mineralization of the Kwangsin mine was formed in quartz and carbonate veins that filled fault-related fractures in the limestone-rich Samtaesan Formation of the Chosun Supergroup and the phyllite-rich Suchangni Formation of unknown age. A K-Ar date of alteration sericite indicates that the Pb-Zn mineralization took place during Late Cretaceous (83.5 Ma), genetically in relation to the cooling of the nearby Muamsa Granite (83~87 Ma). Mineral paragenesis can be divided into three stages (I, II, III): (I) the deposition of barren massive white quartz, (II) the main Pb-Zn mineralization with deposition of white crystalline quartz and/or carbonates (rhodochrosite and dolomite), and (III) the deposition of post-ore barren calcite. Mineralogic and fluid inclusion data indicate that lead-zinc minerals in middle stage II (IIb) were deposited at temperatures between $182^{\circ}$ and $276^{\circ}C$ from fluids with salinities of 2.7 to 5.4 wt. % equiv. NaCl and with log $fs_2$ values of -15.5 to -11.8 atm. The relationship between homogenization temperature and salinity data indicates that lead-zinc deposition was a result of fluid boiling and later meteoric water mixing. Ore mineralization occurred at depths of about 600 to 700 m. Sulfur isotope compositions of sulfide minerals (${\delta}^{34}S_{CDT}=9.0{\sim}14.5$ ‰) indicate a relatively high ${\delta}^{34}S_{{\Sigma}S}$ value of ore fluids (up to 14 ‰), likely indicating an igneous source of sulfur largely mixed with an isotopically heavier sulfur source (possibly sulfates in surrounding sedimentary rocks). There is a remarkable decrease of calculated ${\delta}^{18}O$ value of water in hydrothermal fluids with increasing paragenetic time: stage I, 14.6~10.1 ‰; stage IIa, 5.8~2.2 ‰; stage IIb, 0.8~2.0 ‰; stage IIc, -6.1~-6.8 ‰, This indicates a progressive increase of meteoric water influx in the hydrothermal system at Kwangsin. Measured and calculated hydrogen and oxygen isotope values indicate that the Kwangsin hydrothermal fluids was formed from a circulating (due to intrusion of the Muamsa Granite) meteoric waters which evolved through interaction mainly with the Samtaesan Formation (${\delta}^{18}O=20.1$ to 24.9 ‰) under low water/rock ratios.

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The Change in Refractive Powers of Soft Contact Lenses Caused by the Deposition of Tear Proteins (누액 단백질 침착에 의한 소프트콘택트렌즈의 굴절력 변화)

  • Choi, Jin-Yong;Park, Jae-Sung;Kim, So Ra;Park, Mijung
    • Journal of Korean Ophthalmic Optics Society
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    • v.16 no.4
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    • pp.383-390
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    • 2011
  • Purpose: The present study was conducted to investigate whether refractive powers of soft contact lenses were induced by the deposition of tear proteins when wearing soft contact lenses. Methods: The soft contact lenses (material: etafilcon A, hilafilcon A and comfilcon A) with refractive powers of -1.00 D, -3.00 D, -5.00 D and -7.00 D were incubated in artificial tear for 1 day, 3 days, 5 days, 7 days and 14 days, respectively. After incubation, their refractive powers were measured by wet cell method with an auto-lens meter and their protein deposited on the lenses was determined by the method of Lowry. Results: Among three types of soft contact lenses, the most protein deposition was detected in ionic etafilcon A lens material and significant change of its refractive power was manifested. In other words, refractive powers of etafilcon A lenses firstly decreased after 1 day incubation in artificial tear and then gradually increased with increasing incubation period again. The observed change in refractive powers of all diopters of etafilcon A material was beyond the scope of standard error and bigger in the lens with lower optical power. On the other hand, non-ionic hilafilcon A showed less protein deposition as much as about 20% in etafilacon A and statistically significant increase of refractive powers with increasing incubation period in artificial tear. The change in refractive power of hilafilcon A was also beyond the scope of the standard of error when incubating in artificial tear and greater in the lens with lower diopter. The least protein deposit was shown in silicone hydrogel lens material, comfilcon A as approximately 10% of it in etafilcon A, indicating less change in refractive power within the standard range of error. Conclusions: The large change of refractive powers that was beyond the scope of standard error by the deposition of tear proteins on soft contact lenses was differently detected depending on lens materials in the current study. Thus, the deposition of tear proteins induced by longer period of lens wearing may be one of the causes that induces blurred vision, suggesting that soft contact lens wearers with the amount of tear proteins may need to choose proper lens material.

Analysis of Hydrocarbon Trap in the Southwestern Margin of the Ulleung Basin, East Sea (동해 울릉분지 남서주변부의 탄화수소 트랩 분석)

  • Lee, Minwoo;Kang, Moo-Hee;Yoon, Youngho;Yi, Bo-Yeon;Kim, Kyong-O;Kim, Jinho;Park, Myong-ho;Lee, Keumsuk
    • Economic and Environmental Geology
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    • v.48 no.4
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    • pp.301-312
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    • 2015
  • A commercial gas field was found in the southwestern continental shelf of the Ulleung Basin, East Sea in the late 1990s. To develop additional gas field, an exploration well was drilled through the coarse infill of submarine canyon near the gas field, but it was uneconomic to develop hydrocarbons. Using newly acquired deep seismic reflection and previous well data, we have identified additional geological structure which has hydrocarbon potentials below submarine canyons in the southwestern margin of the basin. Based on the interpretation of the deep seismic reflection and well data, the sequences of the study area can be classified into the syn-rift megasequence(MS1), post-rift megasequence(MS2), syn-compressional megasequence(MS3), and post-compressional megasequence(MS4) in relation to the tectonic events. MS1, deposited simultaneously with the basin formation before the middle Miocene, is characterized by chaotic seismic facies with low- to moderate-amplitude and low frequency reflections. MS2 comprises laterally continuous, low- to moderate-amplitude reflections, showing progradational stacking patterns due to high rates of sediment supply during basin expansion in the middle Miocene. MS3 is mainly composed of continuous reflections with high amplitude and moderate- to high-frequency which are interpreted as coarse-grained sediments. The coarse-grained sediments of MS3 sequence is widely truncated by several submarine canyons which filled with fine-grained sediment of MS4 to form a stratigraphic trap of hydrocarbon. Therefore, the reservoir and seal of the hydrocarbon trap in the study area are coarse-grained sediment of MS3 and submarine canyon filled with fine-grained sediment of MS4, respectively. A flat-spot seismic anomaly, which may indicate the presence of hydrocarbon, is observed within the stratigraphic trap.

Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 MgGa2Se4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Kim, Hyejeong;Park, Hwangseuk;Bang, Jinju;Kang, Jongwuk;Hong, Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.6
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    • pp.283-290
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    • 2013
  • A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

Highly Doped Nano-crystal Embedded Polymorphous Silicon Thin Film Deposited by Using Neutral Beam Assisted CVD at Room Temperature

  • Jang, Jin-Nyeong;Lee, Dong-Hyeok;So, Hyeon-Uk;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.154-155
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    • 2012
  • The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

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Early Life History and Spawning Behavior of the Gobiid Fish, Luciogobius guttatus Gill (미끈망둑, Luciogobius guttatus Gill의 산란습성(産卵習性)및 초기생활사(初期生活史))

  • Kim, Yong-Uk;Han, Kyeong-Ho;Kang, Chung-Bae;Ryu, Jung-Wha
    • Korean Journal of Ichthyology
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    • v.4 no.1
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    • pp.1-13
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    • 1992
  • The gobiid fish, Luciogobius guttalus Gill has an anguilliform with some blackish and reddish brown color in life. It grows up to 90mm in total length. The specimens have been collected from several localities in the southern parts of Korea and Hokkaido, Japan. During the ebb tide, the fish was found in high level of intertidal zone exposed to the air among pebbles in the hollows and slopes of rocks. There are also some other small gobiid fishes comprising 3 species of relative gobies and 1 species of blennioid fish. A total of 5 egg masses were collected from the coast of Haeundae in April to May 1990. Each egg mass was deposited in one layer on the underside of a stone embedded in pebbles and guarded by the male parent. The eggs are club-shaped ranging from 2.71 to 2.80mm in long axis and from 0.65 to 0.74mm in short axis. The eggs were hatched in 98 hours after incubatied at the temperature varying from 19.5 to $25.5^{\circ}C$The newly hatched larvae were from 3.85 to 4.00mm in total length with 35~36 myomeres. In eleven days after hatching, total length reached 5.50mm. The part of the fin-fold of the future dorsal and anal fins became high. In sixteen days after hatching, the lavae averaged 6.20mm in total length and the caudal notochord flex at $45^{\circ}$. The larvae reached the juvenile stage in 48~50 days after hatching and attained 12.80~14.00mm in total length, and all fin-rays was formed. Ossification of the cranium took place at 5.50mm of mean total length in parasphenoid and basioccipital. Ossification of the visceral skeleton occurred in areas where active movements of bones are required, notalbly in the parts of feeding and respiration. Vertebrae began to develop from the anterior end to ossify posteriorly. Neural and haemal spines of vertebrae ossified always prior to the corresponding centra. When larvae reached to about 6.60mm in mean total length (17~18 days after hatching), jaw bones were more repidly ossified than vertebrae and cranium. Ossification of all bones nearly completed when the larvae reached to 13.40mm in mean total length (47~50 days after hatching).

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The study of growth and characterization of $AgInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)에 의한 $AgInSe_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.197-206
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    • 1999
  • The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

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Photocurrent study on the splitting of the valence band and growth of $ZnIn_{2}Se_{4}$ single crystal thin film by hot wall epitaxy (Hot wall epitaxy(HWE)법에 의한 $ZnIn_{2}Se_{4}$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.5
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    • pp.217-224
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    • 2008
  • A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

Characterization of Humic and Fulvic Acids Extracted from Soils in Different Depth: Proton Exchange Capacity, Elemental Composition and 13C NMR Spectrum (깊이별 토양 휴믹산과 풀빅산의 특성 분석: 양성자교환용량, 원소성분비, 13C NMR 스펙트럼)

  • Shin, Hyun-Sang;Lee, Chang-Hoon;Rhee, Dong-Sock;Chung, Kun-Ho;Lee, Chang-Woo
    • Analytical Science and Technology
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    • v.16 no.4
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    • pp.283-291
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    • 2003
  • Humic and fulvic acids present in soils of different depth were extracted and their acidic functional groups and structural characteristics were analyzed and compared. The purpose of this study was to present a basic data needed to evaluate the effect of humic substances on depth distribution and migrational behaviour of radioactive elements deposited on soil. Acidic functional groups of the humic and fulvic acids were analyzed by pH titration method, and their proton exchange capacity (PEC, $mq\;g^{-1}$) and average $pK_a$ values were obtained. Structural characteristics of the humic and fulvic acids were analyzed using their CPMAS $^{13}C$ NMR spectra and elemental composition data. pH titration data showed that fulvic acids have higher acidic functional group contents ranging from 5.5 to $7.0meq\;g^{-1}$ compared with that of humic acids ($3.8{\sim}4.8meq\;g^{-1}$). From depth profiles, it has been found that PEC values of humic acids in deeper soil (> 8 cm) were higher than those at the surface soils. Elemental compositions (H/C ratio) and spectral features ($C_{arom}/C_{aliph}$ ratio) obtained from CPMAS $^{13}C$ NMR spectra showed that the aromatic character in humic acids was a relatively higher than that of fulvic acids, while lower in carboxyl carbon content. The aromatic character and carboxyl carbon contents of humic acids tend to increase as soil depth increased, but those of fulvic acid showed little differences by the soil depth range.