• Journal of the Korean Chemical Society
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• v.38 no.7
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• pp.473-479
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• 1994

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. $WF_6$ was used as a source gas for tungsten and $SiH_4$ was used as a reducing gas for $WF_6$. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of $WF_6$ under cold-wall condition and it was deposited by $SiH_4$ reduction of $WF_6$ under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to $WSi_2$ film by the annealing under $800^{\circ}C.$ From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. $WSi_2$ thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.33-37
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• 2013

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.9sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $H_2$ flow rate. The electrical resistivity of IZO film decreased with increasing flow rate of $H_2$ under Ar+$H_2$. The change of electrical resistivity with increasing flow rate of $H_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility and the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.14-26
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• 1995

The growth mechanism of diamond thin films, deposited by Hot Filament CVD, was investigated through observation of changes in their surface morphology as a function of the substance temperature and deposition time. Amorphous carbon or DLC thin films were deposited at low substrate temperature. Diamond films consisting of square-shaped particles, whose surfaces are (100) planes, were deposited at an intermedate temperature. At high substrate temperatures, diamond films consisting of the particles showing both (100) and (111) plane were deposited. The (100) proferred orientation of the diamond films are believed to be due to a relatively high supersaturation during deposition, and the growth condition for the diamond films having (100) preferred orientation can be applied to the single crystal growth since no twins are generated on the (100) plane. The grain size of the diamond films did not change with increasing temperature and its increasing rate with increasing deposition time was the same irrespective of the substrate temperature. However, the nucleation density increased with substrate temperature and its increasing rate with deposition time was much higher for the films deposited at higher substrate temperature.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.141-145
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• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

• Journal of Welding and Joining
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• v.29 no.6
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• pp.71-76
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• 2011

Submerged arc welding method from both sides is generally applied to the welding of main panel manufacturing process during ship construction. The tandem SAW method is applied to improve the productivity. The various weld defects that occur during tandem SAW method are melt through, incomplete penetration, undercut and overlap etc. It could be thought that the reasons for these defects are mainly lack of prediction ability for penetration depth and deposited metal area. In this research, total 5 kinds of welding factors for experiment like current of lead pole, voltage of lead pole, current of trail pole, voltage of trail pole and welding speed are adopted. Weld tests are carried out for the analysis of variation effects of these factors on penetration depth and deposited metal area. Based on the test and analysis results, it is possible to obtain the prediction equation for the effect of these factors on the amount of deposited metal and penetration depth. As per the verification of the results by additional tests, it is confirmed that the prediction equation, include a error margin of ${\pm}2mm$ for penetration depth and ${\pm}10mm2$ for deposited metal area.

• Journal of the Korean Society of Marine Environment & Safety
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• v.26 no.6
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• pp.681-688
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• 2020

Approximately 6,000 chemicals are transported through the sea, including hazardous and noxious substances (HNS), which cause marine pollution and are harmful to marine life. The HNS discharged into the sea during the maritime transportation process undergoes physical and chemical changes on the sea surface and in seawater, and some types of HNS sink and are deposited on the seabed. The HNS deposited on the seabed adversely affects the benthic ecosystem, and hence, it is desirable to detect, treat, and recover the HNS on the seabed. Therefore, this study was conducted to analyze the performance requirements that should be considered as the top priority when developing a mechanical system for recovering the HNS deposited on the seabed. Various types of existing dredging devices used for collecting and recovering pollutants from river beds and seabeds were investigated, and 10 performance indices for the mechanical devices were selected. The new performance requirements for the development of the seabed-deposited HNS recovery system were proposed using performance indices. By considering the depth of water in domestic seaports, some of the performance requirements of the mechanical system for recovering deposited HNS from the seabed were obtained as follows: production rate (50-300 ㎥/hr), maximum operation depth (50 m), sediment type (most forms), percentage of solids (10 % or higher), horizontal operating accuracy (±10 cm), limiting currents (3-5 knots). These performance requirements are expected to be useful in the conceptual and basic design of mechanical systems for recovering seabed-deposited HNS.

• Asian Journal of Atmospheric Environment
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• v.6 no.4
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• pp.281-287
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• 2012

Aerosol concentrations at the CC-Lag site in the Teshio Experimental Forest increased from winter to spring and sometimes showed extremely high values associated with Kosa and/or forest-fire events. The range and mean of the mass concentrations of aerosol chemical species were as follows: total particulate mass, 1.2-29, 5.0; elemental carbon, 0.061-2.2, 0.43; organic carbon, 0.059-3.5, 0.79; and sulfate, 0.12-6.2, 1.8 ${\mu}g/m^3$. The total masses of the deposited particles on hybrid larch and on bamboo leaves were approximately 35 and 30 ${\mu}g/cm^2$, respectively. The amounts of soil particles on the leaves were 6 ${\mu}g/cm^2$ for the upper part of hybrid larch, 2 ${\mu}g/cm^2$ for the lower part of hybrid larch, and 1 ${\mu}g/cm^2$ for Sasa bamboo leaves. The amounts of deposited black carbon were 2.3 ${\mu}g/cm^2$ for the upper part of hybrid larch, 0.6 ${\mu}g/cm^2$ for the lower part of hybrid larch, and 0.2 ${\mu}g/cm^2$ for Sasa bamboo leaves. Half of the total deposited particular mass was attached on the hybrid larch; however, most of the total deposited mass was adhered on the Sasa bamboo leaves. Regardless of the species, there tend to be more deposited particles on the leaves in the upper part than in the lower part, with only a few meters height difference. Comparing the composition of the deposited particles to that of the atmospheric aerosols without any size cut, the fractions of water-soluble material sulfate and sea salt in the deposited aerosols were about one tenth and one hundredth lower than that in the aerosols, respectively. On the basis of the measured concentration and the deposited amount on leaves, the deposition velocity of black carbon was estimated to be approximately 0.5 cm/s.

• Journal of Korean Ophthalmic Optics Society
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• v.14 no.1
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• pp.57-62
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• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The color and hardness of deposited TiN films was investigated. Methods: The cross sections of deposited films on silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS, the components of the inner parts of the films were observed by XPS depth profiling. XPS high resolution scans and curve fittings of deposited films were performed for quantitative chemical analysis, Vickers micro hardness measurements of deposited films were performed with a nano indenter equipment. Results: The colors of deposited films gradually changed from light gold to dark gold, light violet, and indigo color with increasing of the thickness. It could be seen that the color change come from the composite change of three compound,$TiO_{x}N_{y}$, $TiO_2$, TiN. Especially, the composite change of$TiO_{x}N_{y}$ compound was thought to affect the color change with respect to thickness. Conclusions: Deposited films had lower than the value of general TiN film in Vickers hardness, which was caused by mixing three TiN, $TiO_2$,$TiO_{x}N_{y}$ compound in the deposited films. The increasing and decreasing of micro hardness with respect to thickness was thought to have something to do with the composite of TiN in the films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.104-104
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• 2001