• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.26-27
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• 2004

We present the first demonstration of the vertical-injection depleted optical thyristor laster diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 3.36 V and 10 A respectively. The holding voltage and current are respectively 1.37 V, 100 A. The lasing threshold current is 131 mA at 25 C. The output peak wavelength is at 1578 nm at a bias current equal to 1.22 times threshold.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.35-43
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• 1999

We propose and analyze novel optical thyristor which can be used in free-space optical interconnection(FSOI). Novel optical thyristors are fully depleted optical thyristors(DOTs) using bottom mirror and/or multiple quantum wells (MQW), thereby its switching characteristics can be improved significantly. We obtain switching characteristics using coupled junction model associated with current oriented method. Emission characteristics of the DOT are obtained using thin film characteristic matrix and van Roosbroeck-Shockley relation. Compared to the performance using conventional DOT, the optical switching energy is decreased by a factor of 0.43 and the bit-rate is increased by a factor of 1.61 when the DOT with MQW and bottom mirror is employed for FSOI.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.39-46
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• 2005

We fabricate and analyze fully depleted optical thyristors (DOTs) using quarter wavelength reflector stacks (QWRS). QWRS are employed as bottom mirrors to enhance the emission efficiency as well as the optical sensitivity. In order to analyze their switching characteristics, S-shape nonlinear current-voltage curves are simulated and the reverse full-depletion voltages (Vneg's) of DOTs are obtained as function of semiconductor parameters by using a finite difference method (FDM). The fabricated DOTs show sufficient nonlinear s-shape I-V characteristics and switching voltage changes of these devices with and without bottom mirrors show 1.82 V and 1.52 V, respectively. Compared to a conventional DOT, this device with the bottom mirrors shows about 20％ and 46% enhancement in switching voltage change and spontaneous emission efficiency, respectively.