• Progress in Medical Physics
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• v.14 no.4
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• pp.218-224
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• 2003

Purpose：By evaluating the dependence of the tray transmission factor (tray factor) on collimator setting and tray thickness, we determined the validity of the clinically used single tray factor for standard radiation field size (10${\times}$10 $\textrm{cm}^2$). Methods and Materials：For each X ray energies (6 and 10 MV), outputs were measured by using 5 steps of tray thickness (0, 6, 8, 10, 12 mm) and 7 steps of radiation field size (5${\times}$5, 10${\times}$10, 15${\times}$15, 20${\times}$20, 25${\times}$25, 30${\times}$30, 35${\times}$35 $\textrm{cm}^2$) at 10 cm phantom depth. Outputs were measured in both 'with tray' and 'without tray' conditions by using radiation with the same monitor units, and the tray factors were determined by the ratios of the two outputs. To evaluate the validity of a single tray factor obtained for standard radiation field, we analyzed the pattern of the field sizes in cases treated at our hospital in 2002. Results : In the 6 MV X-ray, the increases in the tray factor between the standard field (l0${\times}$10 $\textrm{cm}^2$) and the largest field (35${\times}$35 $\textrm{cm}^2$) were 0.517%, 0.835%, 1.058%, 1.066% in 6, 8, 10, and 12 mm thickness tray, respectively. In the 10 MV X-ray, the increases in the fray factor between the standard field (10${\times}$10 $\textrm{cm}^2$) and the largest field (35${\times}$35 $\textrm{cm}^2$) were 0.517%, 0.836%, 1.058%, 1.066% in 6, 8, 10, 12 mm thickness tray, respectively. In a major portion of clinical cases, when the field size was smaller than 20${\times}$20 $\textrm{cm}^2$, the tray factor was in good agreement with the standard tray factor. However, in cases where the field sizes were 30${\times}$30 $\textrm{cm}^2$ and 35${\times}$35 $\textrm{cm}^2$, the error could exceed 1.0%. Conclusion：The tray factor increased with increasing field size or decreasing tray thickness. The difference of tray factor between the small field and the large field increased with increasing tray thickness. Furthermore, the standard tray factor was valid in most clinical cases except for when the field size was greater than 30${\times}$30 $\textrm{cm}^2$, wherein the error could exceed 1.0%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.170-170
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• 2012

최근 주목받고 있는 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 수소가 첨가된 비정질 실리콘 TFT (a-Si;H)에 비해 비정질 상태에서도 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭에 의해 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광 소자 (AM-OLED), 투명 디스플레이에 응용되고 있다. 하지만, 실제 디스플레이가 동작하는 동안 스위칭 TFT는 백라이트 또는 외부에서 들어오는 빛에 지속적으로 노출되게 되고, 이 빛에 의해서 TFT 소자의 신뢰성에 악영향을 끼친다. 또한, 디스플레이가 장시간 동안 동작 하면 내부 온도가 상승하게 되고 이에 따른 온도에 의한 신뢰성 문제도 동시에 고려되어야 한다. 특히, 실제 AM-LCD에서 스위칭 TFT는 양의 게이트 전압보다 음의 게이트 전압에 의해서 약 500 배 가량 더 긴 시간의 스트레스를 받기 때문에 음의 게이트 전압에 대한 신뢰성 평가는 대단히 중요한 이슈이다. 스트레스에 의한 문턱 전압의 변화는 게이트 절연막과 반도체 채널 사이의 계면 또는 게이트 절연막의 벌크 트랩에 의한 것으로 게이트 절연막의 선택에 따라서 신뢰성을 효과적으로 개선시킬 수 있다. 본 연구에서는 적층된 $Si_3N_4/SiO_2$ (NO 구조) 이중층 구조를 게이트 절연막으로 사용하고, 완충층의 역할을 하는 $SiO_2$막의 두께에 따른 소자의 전기적 특성 및 신뢰성을 평가하였다. a-IGZO TFT 소자의 전기적 특성과 신뢰성 평가를 위하여 간단한 구조의 pseudo-MOS field effect transistor (${\Psi}$-MOSFET) 방법을 이용하였다. 제작된 소자의 최적화된 $SiO_2$ 완충층의 두께는 20 nm이고 $12.3cm^2/V{\cdot}s$의 유효 전계 이동도, 148 mV/dec의 subthreshold swing, $4.52{\times}10^{11}cm^{-2}$의 계면 트랩, negative bias illumination stress에서 1.23 V의 문턱 전압 변화율, negative bias temperature illumination stress에서 2.06 V의 문턱 전압 변화율을 보여 뛰어난 전기적, 신뢰성 특성을 확인하였다.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.49-56
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• 2000

In the present we.k, temperature dependence of oxygen diffusivity in the polyvinyl chloride (PVC) film $D_f$ formed on gold electrode was investigated using steady-state rotating disk electrode (RDE) technique and modulated electrohydrodynamic (EHD) impedance technique. Both the diffusion rate defined as the ratio of oxygen diffusivity in the PVC film to the film thickness $D_f/\delta_f$ and the time constant $\delta_f^2/D_f$ for oxygen diffusion through the PVC film were obtained from plot of the limiting current versus disk rotation speed and from filing the EHD impedance spectra experimentally measured to those theoretically calculated on the basis of the diffusion equation for mass transport through the non-conductive and porous film, respectively. By combining measured $D_f/\delta_f$ with $\delta_f^2/D_f$, we determined $\delta_f\;and\;D_f$ at room temperature separately. As temperature increased, it appeared that the $D_f$ value measured for the PVC film-covered gold RDE was enhanced more rapidly than that $D_s$ value in the solution measured for the PVC film-free gold RDE. This means that the pores glowing with increasing temperature act as effective diffusion paths within the film. The present in-situ steady-state and modulated EHD measurements prove to be effective for determining $\delta_f\;and\;D_f$, separately and at the same time the porosity of the PVC film at temperatures below glass temperature $T_g$ of the film.

• Progress in Medical Physics
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• v.24 no.2
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• pp.108-118
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• 2013

Currently, an arterial spin labeling (ASL) magnetic resonance imaging (MRI) technique does not routinely used in clinical studies to measure perfusion in brain because optimization of imaging protocol is required to obtain optimal perfusion signals. Therefore, the objective of this study was to investigate changes of perfusion-weighed signal intensities with varying several parameters on a pulsed arterial spin labeling MRI technique obtained from a 3T MRI system. We especially evaluated alternations of ASL-MRI signal intensities on special brain areas, including in brain tissues and lobes. The signal targeting with alternating radiofrequency (STAR) pulsed ASL method was scanned on five normal subjects (mean age: 36 years, range: 29~41 years) on a 3T MRI system. Four parameters were evaluated with varying: 1) the labeling gap, 2) the labeling delay time, 3) the labeling thickness, and 4) the slice scan order. Signal intensities were obtained from the perfusion-weighted imaging on the gray and white matters and brain lobes of the frontal, parietal, temporal, and occipital areas. The results of this study were summarized: 1) Perfusion-weighted signal intensities were decreased with increasing the labeling gap in the bilateral gray matter areas and were least affected on the parietal lobe, but most affected on the occipital lobe. 2) Perfusion-weighted signal intensities were decreased with increasing the labeling delay time until 400 ms, but increased up to 1,000 ms in the bilateral gray matter areas. 3) Perfusion-weighted signal intensities were increased with increasing the labeling thickness until 120 mm in both the gray and white matter. 4) Perfusion-weighted signal intensities were higher descending scans than asending scans in both the gray and white matter. We investigated changes of perfusion-weighted signal intensities with varying several parameters in the STAR ASL method. It should require having protocol optimization processing before applying in patients. It has limitations to apply the ASL method in the white matter on a 3T MRI system.

• Journal of the Korean Magnetics Society
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• v.27 no.2
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• pp.41-48
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• 2017

Recent study shows that ordered alloy of $L1_2$ $XPt_3$ (M = V, Cr, Mn, Co, and Fe) exhibits various magnetic phases such as ferromagnetic-to-antiferromagnetic transition at the $MnPt_3$ surface. Moreover, it has been argued that $CrPt_3$, in particular, possess large magnetocrystalline anisotropy and Kerr rotation with possible violation of Hund's rule. As such, we extend our work to thickness dependence of the magnetic structure of $CrPt_3$ thin film using density functional theory. Magnetic ground state of the bulk $CrPt_3$ turns out to be ferromagnetic (FM), where other magnetic phases such as A-type (A-AF), C-type (C-AF), and G-type antiferromagnetic (G-AF) state have higher total energies than FM by 0.517, 0.591, and 0.183 eV, respectively, and magnetic moments of Cr in bulk are respectively 2.807 (FM), 2.805 (A-AF), 2.794 (C-AF) and $2.869_{{\mu}_B}$ (G-AF). We extend our study to $CrPt_3$(001) thin films with CrPt-and Pt-termination. The thickness and surface-termination dependences of magnetism are investigated for 3-9 monolayers (ML), where different magnetic phases from bulk emerge: C-AF for CrPt-terminated 3 ML and G-AF for Pt-terminated 5 ML have energy difference relative to FM by 8 and 54 meV, respectively. Furthermore, thickness- and surface-termination-dependent magnetocrystalline anisotropies of the $CrPt_3$(001) films are discussed.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Radiation Oncology Journal
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• v.15 no.2
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• pp.159-165
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• 1997

Purpose : Secondary electrons generated by interaction between Primary X-rar beam and block tray in megavoltage irradiation, result in excess soft radiation dose to the surface layer To reduce the surface dose from the electron contamination, electron filters were attached under the tray when a customized block was used. Materials and Methods : Cu, Al or Cu/Al combined Plate with different thickness was used as a filter and the surface dose reduction was measured for each case. The measurement to find optimal filter was performed with $10m\times10cm$ field size and 78.5cm source to surface distance. The measurement points are positioned with 2mm intervals from surface to maximum build-up point. To acquire the effect of field size dependence on optimal electron filter, the measurement was performed from $4cm\times4cm\;to\;25cm\times25cm$ field sizes. Results : The surface dose was slowly increased by increasing irradiation field but rapidly increased beyond $15cm\times15cm$ field size. Al plate was found to be inadequate filter because of the failure to have surface dose kept lowering than the dose of deep area. Cu 0.5mm plate and Cu/Al=0.28mm/1.5mm combined plate were found to be optimal filters. By using these 2 filters, the absorbed dose to the surface layer was effectively reduced by $5.5\%,\;11.3\%,\;and\;22.3\%$ for the field size $4cm\times4cm,\;10m\times10cm,\;and\;25cm\times25cm$, respectively. Conclusion : The surface dose attributable to electron contamination had a dependence on field size. The electron contamination was increased when tray was used. Specially the electron contamination in the surface layer was greater when the larger field was used. 0.5mm Cu Plate and Cu/Al=0.28mm/15mm combined plates were selected as optimal electron filters. When the optimal electron filter was attached under the tray, excessive surface dose was decreased effectively The effect of these electron filters was better when a larger field was used.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.15 no.3
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• pp.45-54
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• 2012

This study intended to analyze growth condition of each object by protected tree's ground for 45 places registered to Pyeongtaek protected tree list in locational characteristics, conduct exchange analysis for impediment extent rate in crown area and tree type to the result and suggest the measures to manage artificial impediment which is an effect on protected tree condition. In this study, the tree whose area of impediment for crown area is less than 21% is tree condition of grade 1~2, less than 21~50% is grade 2~3 and more than 50% is grade 3~5. The more impediment is, the more inconvenience causes on growth and development. So, it verified that the area rate must maintain less than 21% for the root system management of protected tree. For the standard of managing artificial impediment which is an effect on the tree condition of protected trees, the below matters intend to be suggested. The first, the impediment in crown area should be less than 21%. But, if there is not artificial impediment out of crown area, the rate of impediment area is considered to increase somewhat. The second, growth space of protected tree should be maintained by crown area at least and impediment should be established out of the crown area. The third, during the national project and land development, surroundings of protected tree must be applied as park, resting place, etc. and the establishment area of impediment (artificial impediment and natural impediment) in crown area must be limited. The forth, publicity for regional people (especially, land owner) is necessary for the protection of natural inheritance and the value of dependence on local government and village which are the subject of management must be announced widely through the internet media, etc, so its importance must be recognized. The fifth, the matters related to protected tree management must be able to limit artificial damage which is for surroundings of protected tree through the mutual connection among the local governments; construction, civil engineering, architecture, water and sewage, agriculture and forest and others. Also, following studies on the effects of kinds, thickness, etc. of impediment around the protected tree on trees should be continued.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.