• 대한전자공학회논문지SD
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• 제41권4호
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• pp.67-74
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• 2004

기존의 버스트 모드 자동전력제어 회로는 데이터 율이 증가함에 따라 마크밀도 변화 영향을 심하게 받아 에러를 야기하였다. 이 문제를 해결하기 위해 높은 데이터 율에서도 마크밀도의 영향을 배제시킬 수 있는 새로운 구조의 첨두 비교기를 고안하고 이를 자동전력제어 회로에 적용하여 마크밀도 변화에 강한 버스트 모드 자동전력제어 회로를 제안하였다. 제안한 자동전력제어 회로 내의 첨두 비교기는 높은 데이터 율에서 뿐만 아니라 광범위한 기준전류 및 차 전류 변화에서도 미소한 마크밀도 변화 영향만을 보여 마크밀도 변화에 매우 강한 특성을 확인 할 수 있었다.

• 대한기계학회논문집
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• 제17권5호
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• pp.1150-1160
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• 1993

본 연구에서는 보압과정시 급속한 압력구배에 의한 관성항의 영향을 고려하기 위해 수정된 Hele-Shaw 모델과 압축열 발생항, 온도와 압력의 변화에 따른 수지의 밀 도 이완현상에 대한 모델의 도입 및 유한요소법을 이용한 수치해석적 방법을 제시하여 정확한 잔류압력을 구하고 성형조건 및 물성치에 따른 수지의 거동을 살펴보고자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• 수산경영론집
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• 제42권3호
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• pp.79-93
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• 2011

Water temperature of Oliver flounder farm affects Oliver flounder growth and mortality rate. In laboratory experimental tanks, optimal water temperature was $22.5^{\circ}C$($21{\sim}24^{\circ}C$) and cultivatable water temperature was $12{\sim}28^{\circ}C$. The purpose of this study is to identify applicable and useful water temperature of Oliver flounder farm in case of actual farming. The data applied in the analysis was collected from Jeju island. In the study, various analytical methods including productivity analysis, regression analysis, statistical analysis were conducted for 13 Oliver flounder culture farms. The result of analysis can be summarized as follows : First, growth rate on the Oliver flounder culture farms was related to mean of water temperature, variation of water temperature and low water temperature. Second, survival rate on the Oliver flounder culture farms was related to mean of water temperature. In case of including Oliver flounder stocking density, defined as the surface area of Oliver flounder per $m^2$ of water surface area, survival rate strongly related to mean of water temperature, variation of water temperature, cultivating capability and stocking density. Third, production weight per $m^2$ of water surface area was strongly related to mean of water temperature, low water temperature and cultivating capability. Growth rate and survival rate was analyzed into mediate variable character.

• 한국환경보건학회지
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• 제22권3호
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• pp.98-102
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• 1996

This study investigated performance of the phenol degradation and reaction characteristics according to variation of phenol volumetric loading rates and dilution rates in suspension and PACT reactors using Pseudomonas sp. B3. 1. Removal efficiencies of the PAC unit indicated about 100 % with phenol volumetric loading rates from 0.4 phenol $kg/ma^3\cdot d$ to 1.2 phenol $kg/m^3\cdot d$, however, which of the suspension reactor showed about 100% with from 0.2 phenol $kg/m^3\cdot d$ to 0.75 phenol $kg/ma^3\cdot day$. 2. The cell density slightly was decreased from 298.2 mg/l to 272 mg/l, when dilution rate for suspension was reactor increased from 0.4 to 1.41 1/d, and also the cell density suddenly was decreased to 145.5 mg/l and was washed out at the dilution rate higher than 1.60 1/d. But the cell density for the PAC unit was linearly decreased with dilution rate of from 0.8 to 3.0 1/d, and showed 220.75 mg/l at maximum dilution rate. 3. The phenol utilization rate was increased from 0.008 to 0.031 phenol g/l$\cdot$h, when dilution rate for suspension reactor was increased from 0.4 to 1.5 1/d, however, the rate for the PAC unit was linearly increased from 0.017 to 0.061 phenol g/l$\cdot$h as variation changes from 0.017 to 0.061 phenol g/l$\cdot$h dilution rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• 복식문화연구
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• 제13권6호통권59호
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• pp.896-909
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• 2005

In need of studies on the kinds and structure of thread, the biggest variable factor in knitwear patterns, this study attempts: to examine the physical properties by thread type to basically establish systematic data in order to utilize various mixture and structure of yarn and to contribute to the development of optical patterns by building a systemic and scientific methods to produce knit wear patterns though a statistical analysis of the relation between the variations and physical properties. The results is as follows: with time, a feature of knit, which causes instability making it difficult to maintain the original shape, related to material properties, the weight and expansibility recovery rate have the greatest influence on the variation of wale lengths, though the amount varies by material. The variation of course contraction is closely related to density, the dense fabrics showing the highest values, due to the bust of the human body, the wale length variation of the front is greater than that of the back, by a regression analysis of material properties and the variations is obtained showing the weight, density and expansibility recovery rate have the greatest influence on the wale extension and course contraction of knit.

• 상하수도학회지
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• 제23권6호
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• pp.703-709
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• 2009

In this study, an artificial-waterway experiment was conducted, using an attachment plate, on which algae from Nanakita river was placed, to examine the influence exerted by the variation of the dissolved-silicon concentration on the river periphyton. As a result, the variation of the dissolved-silicon concentration was found to exert an influence on the density of the adhesion diatom, and the mole ratio limits of the silica were about $Si/P{\fallingdotseq}182$ and $Si/N{\fallingdotseq}16.4$ or less. Moreover, the mole ratio that is necessary for proliferation was found to be larger than the value of the oceanic algae. Senedesmus sp. and Ankistrodesmus sp., which used silica in adhesion chlorophyta, received the influence of the silicon concentration strongly, and the twowere found to be superior in the environment, making silica a restriction factor.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.508-513
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• 2007

The electrical properties and stability of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-based$ varistors were investigated for different $Tb_4O_{11}$ amounts in the range of $0{\sim}1.0\;mol%$. As the $Tb_4O_{11}$ amount increased, the sintered density increased in the range of $99.1{\sim}101.1%$ of theoretical density and the average grain size decreased in the range of $7.7{\sim}4.8{\mu}m$. The varistor voltage increased in the range of $280.9{\sim}715.8V/mm$ and the nonlinear coefficient increased in the range of $26.4{\sim}44.4$ with the increased of $Tb_4O_{11}$ amount. The 0.25 mol% $Tb_4O_{11}$-doped varistors exhibited the high electrical stability, with -0.1% in variation rate of varistor voltage, -0.7% in variation rate of nonlinear coefficient, and +17.4% in variation rate of leakage current for specified dc accelerated aging stress of $0.95V_{1mA}/150^{\circ}C/24h$.