• Title/Summary/Keyword: Density variation rate

Search Result 279, Processing Time 0.027 seconds

A Burst-mode Automatic Power Control Circuit Robust io Mark Density Variations (마크 밀도 변화에 강한 버스트 모드 자동 전력 제어 회로)

  • 기현철
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.41 no.4
    • /
    • pp.67-74
    • /
    • 2004
  • As data rate was increased, the conventional burst-mode automatic power control circuit caused errors due to the effort of the mark density variation. To solve this problem we invented a new structured peak-comparator which could eliminate the effect of the mark density variation even in high date rate, and revised the conventional one using it. We proposed a burst-mode automatic power control circuit robust to mark density variations. We found that the peak-comparator in the proposed automatic power control circuit was very robust to mark density variations because it affected very little by the mark density variation in high date rate and in the wide variation range of the reference current and the difference current.

The Effects of Packing and Cooling Stages on the Molded Parts in Injection Molding Process (사출 성형시 보압 및 냉각 과정이 성형품에 미치는 영향)

  • 구본흥;신효철;이호상
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.17 no.5
    • /
    • pp.1150-1160
    • /
    • 1993
  • The behavior of polystyrene in the strip cavity during the packing and cooling stages for an injection molding process is examined numerically. The mathematical model is based on the unified post-filling model and finite element/finite difference methods are used to solve simultaneously the continuity, momentum and energy equations coupled to an equation of state. Simulated results show that the density of the molded parts is lower in the core than at the skin, and that the hotter the melt or the higher the packing pressure, the higher the density in the core. The density variation during the packing stage comes up to 50% compared with the total density variation. Also, the density variation after gate sealing and the effect of cooling rate on the equation of state are negligible.

Physics and current density-voltage characteristics of $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells ($a-Si_{1-x}Ge_x:H$ 화합물(化合物) p-i-n 태양전지(太陽電池)의 물리(物理) 및 전류밀도(電流密度)-전압(電壓) 특성(特性))

  • Kwon, Young-Shik
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1435-1438
    • /
    • 1994
  • The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

  • PDF

Analysis of First Wafer Effect for Si Etch Rate with Plasma Information Based Virtual Metrology (플라즈마 정보인자 기반 가상계측을 통한 Si 식각률의 첫 장 효과 분석)

  • Ryu, Sangwon;Kwon, Ji-Won
    • Journal of the Semiconductor & Display Technology
    • /
    • v.20 no.4
    • /
    • pp.146-150
    • /
    • 2021
  • Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

An Environmental Effect on Productivity of Flounder Culture Farms (넙치양식장 환경에 따른 생산성에 관한 연구)

  • Eh, Youn-Yang
    • The Journal of Fisheries Business Administration
    • /
    • v.42 no.3
    • /
    • pp.79-93
    • /
    • 2011
  • Water temperature of Oliver flounder farm affects Oliver flounder growth and mortality rate. In laboratory experimental tanks, optimal water temperature was $22.5^{\circ}C$($21{\sim}24^{\circ}C$) and cultivatable water temperature was $12{\sim}28^{\circ}C$. The purpose of this study is to identify applicable and useful water temperature of Oliver flounder farm in case of actual farming. The data applied in the analysis was collected from Jeju island. In the study, various analytical methods including productivity analysis, regression analysis, statistical analysis were conducted for 13 Oliver flounder culture farms. The result of analysis can be summarized as follows : First, growth rate on the Oliver flounder culture farms was related to mean of water temperature, variation of water temperature and low water temperature. Second, survival rate on the Oliver flounder culture farms was related to mean of water temperature. In case of including Oliver flounder stocking density, defined as the surface area of Oliver flounder per $m^2$ of water surface area, survival rate strongly related to mean of water temperature, variation of water temperature, cultivating capability and stocking density. Third, production weight per $m^2$ of water surface area was strongly related to mean of water temperature, low water temperature and cultivating capability. Growth rate and survival rate was analyzed into mediate variable character.

Effects of Fine Powder Active Carbon Addition on the Wastewater Treatment Containing Phenol (Phenol함유 폐수의 처리에서 분말 활성탄 첨가의 영향)

  • 강선태;김정목
    • Journal of Environmental Health Sciences
    • /
    • v.22 no.3
    • /
    • pp.98-102
    • /
    • 1996
  • This study investigated performance of the phenol degradation and reaction characteristics according to variation of phenol volumetric loading rates and dilution rates in suspension and PACT reactors using Pseudomonas sp. B3. 1. Removal efficiencies of the PAC unit indicated about 100 % with phenol volumetric loading rates from 0.4 phenol $kg/ma^3\cdot d$ to 1.2 phenol $kg/m^3\cdot d$, however, which of the suspension reactor showed about 100% with from 0.2 phenol $kg/m^3\cdot d$ to 0.75 phenol $kg/ma^3\cdot day$. 2. The cell density slightly was decreased from 298.2 mg/l to 272 mg/l, when dilution rate for suspension was reactor increased from 0.4 to 1.41 1/d, and also the cell density suddenly was decreased to 145.5 mg/l and was washed out at the dilution rate higher than 1.60 1/d. But the cell density for the PAC unit was linearly decreased with dilution rate of from 0.8 to 3.0 1/d, and showed 220.75 mg/l at maximum dilution rate. 3. The phenol utilization rate was increased from 0.008 to 0.031 phenol g/l$\cdot$h, when dilution rate for suspension reactor was increased from 0.4 to 1.5 1/d, however, the rate for the PAC unit was linearly increased from 0.017 to 0.061 phenol g/l$\cdot$h as variation changes from 0.017 to 0.061 phenol g/l$\cdot$h dilution rate.

  • PDF

Electrical Properties of SBT Thin Films after Etching in Cl$_2$/Ar Inductively Coupled Plasma (Ar/Cl$_2$ 유도결합플라츠마 식각 후 SBT 박막의 전기적 특성)

  • 이철인;권동표;깅창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.58-61
    • /
    • 2002
  • SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

  • PDF

A Study on the Pattern Development of Knitwear According to Yarn Property - Focused on Shift One-Piece Dress - (니트웨어 소재 특성에 다른 패턴 개발 연구 - 쉬프트 원피스 드레스를 중심으로 -)

  • Yoon Hye-Jun;Song Mi-Ryong
    • The Research Journal of the Costume Culture
    • /
    • v.13 no.6 s.59
    • /
    • pp.896-909
    • /
    • 2005
  • In need of studies on the kinds and structure of thread, the biggest variable factor in knitwear patterns, this study attempts: to examine the physical properties by thread type to basically establish systematic data in order to utilize various mixture and structure of yarn and to contribute to the development of optical patterns by building a systemic and scientific methods to produce knit wear patterns though a statistical analysis of the relation between the variations and physical properties. The results is as follows: with time, a feature of knit, which causes instability making it difficult to maintain the original shape, related to material properties, the weight and expansibility recovery rate have the greatest influence on the variation of wale lengths, though the amount varies by material. The variation of course contraction is closely related to density, the dense fabrics showing the highest values, due to the bust of the human body, the wale length variation of the front is greater than that of the back, by a regression analysis of material properties and the variations is obtained showing the weight, density and expansibility recovery rate have the greatest influence on the wale extension and course contraction of knit.

  • PDF

Effects on Density and Dominant rate of Periphyton by Variation of Dissolved Silicon Concentration (용존규소농도의 변화가 하천 부착조류의 밀도와 우점율에 미치는 영향에 관한 연구)

  • Jeon, Kyoung-ho
    • Journal of Korean Society of Water and Wastewater
    • /
    • v.23 no.6
    • /
    • pp.703-709
    • /
    • 2009
  • In this study, an artificial-waterway experiment was conducted, using an attachment plate, on which algae from Nanakita river was placed, to examine the influence exerted by the variation of the dissolved-silicon concentration on the river periphyton. As a result, the variation of the dissolved-silicon concentration was found to exert an influence on the density of the adhesion diatom, and the mole ratio limits of the silica were about $Si/P{\fallingdotseq}182$ and $Si/N{\fallingdotseq}16.4$ or less. Moreover, the mole ratio that is necessary for proliferation was found to be larger than the value of the oceanic algae. Senedesmus sp. and Ankistrodesmus sp., which used silica in adhesion chlorophyta, received the influence of the silicon concentration strongly, and the twowere found to be superior in the environment, making silica a restriction factor.

Terbia Addition Effects on Accelerated aging Characteristics of (Pr, Co, Cr)-doped ZnO Varistors ((Pr, Co, Cr)-doped ZnO 바리스터의 가속열화특성에 테르비아 첨가효과)

  • Nahm, Choon-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.6
    • /
    • pp.508-513
    • /
    • 2007
  • The electrical properties and stability of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-based$ varistors were investigated for different $Tb_4O_{11}$ amounts in the range of $0{\sim}1.0\;mol%$. As the $Tb_4O_{11}$ amount increased, the sintered density increased in the range of $99.1{\sim}101.1%$ of theoretical density and the average grain size decreased in the range of $7.7{\sim}4.8{\mu}m$. The varistor voltage increased in the range of $280.9{\sim}715.8V/mm$ and the nonlinear coefficient increased in the range of $26.4{\sim}44.4$ with the increased of $Tb_4O_{11}$ amount. The 0.25 mol% $Tb_4O_{11}$-doped varistors exhibited the high electrical stability, with -0.1% in variation rate of varistor voltage, -0.7% in variation rate of nonlinear coefficient, and +17.4% in variation rate of leakage current for specified dc accelerated aging stress of $0.95V_{1mA}/150^{\circ}C/24h$.