• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Sleep Medicine and Psychophysiology
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• v.27 no.2
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• pp.67-76
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• 2020

Objectives: Brain maturation involves brain lateralization and asymmetry to achieve efficient information processing and cognitive controls. This study elucidates normal brain maturation change during the gap between ages 6-9 and age 14-17 using resting EEG. Methods: An EEG dataset was acquired from open source MIPDB (Multimodal Resource for Studying Information Processing in the Developing Brain). Ages 6-9 (n = 24) and ages 14-17 (n = 26) were selected for analysis, and subjects with psychiatric illness or EEG with severe noise were excluded. Finally, ages 6-9 (n = 14) and ages 14-17 (n = 11) were subjected to EEG analysis using EEGlab. A 120-sec length of resting EEG when eyes were closed was secured for analysis. Brain topography was compartmentalized into nine regions, best fitted with brain anatomical structure. Results: Absolute power of the delta band and theta band in ages 6-9 was greater than that of ages 14-17 in the whole brain, and, also is relative power of delta band in frontal compartment, which is same line with previous studies. The relative power of the beta band of ages 14-17 was greater than that of ages 6-9 in the whole brain. In asymmetry evaluation, relative power of the theta band in ages 14-17 showed greater power in the left than right frontal compartment; the opposite finding was noted in the parietal compartment. For the alpha band, a strong relative power distribution in the left parietal compartment was observed in ages 14-17. Absolute and relative power of the alpha band is distributed with hemispheric left lateralization in ages 14-17. Conclusion: During the gap period between ages 6-9 and ages 14-17, brain work becomes more complicated and sophisticated, and alpha band and beta band plays important roles in brain maturation in typically developing children.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.