• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.11-18
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• 2004

In this paper, the classification of artificial defects in semiconductor packages is studied by using pattern recognition technology. For this purpose, the pattern recognition algorithm includes the user made MATLAB code. And preprocess is made of the image process and self-organizing map, which is the input of the back-propagation neural network and the dimensionality reduction method, The image process steps are data acquisition, equalization, binary and edge detection. Image process and self-organizing map are compared to the preprocess method. Also the pattern recognition technology is applied to classify two kinds of defects in semiconductor packages: cracks and delaminations.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.559-566
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• 1995

Alumina powder was coated with stearic acid and then mixed with isotactic polypropylene, atactic polypropylene as binders at 15$0^{\circ}C$ for 2 hours. The mixture was then injection molded at various mold temperatures using injection molding machine to investigate the effect of the molding temperature and debinding parameters on the formation of the defects. The molded specimens were debinded in both air and nitrogen atmospheres. Wicking and solvent methods were also used to enhance debinding efficiency. The specimens were prefired at 120$0^{\circ}C$ and then sintered at 150$0^{\circ}C$ for 3 hours. Various defects were formed at mold temoperature of 3$0^{\circ}C$, 6$0^{\circ}C$ and 10$0^{\circ}C$ and any noticeable defect was not formed at 85$^{\circ}C$. The density of green body increased with mold temperature. Debinding in air atmosphere was more effective than in nitrogen atmosphere. Results also proved that wicking and solvent treatments helped minimize the number of defects.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.494-497
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• 1999

Neural networks are shown to be effective in being able to distinguish incomplete penetration-like weld defects by directly analyzing the plasma which is generated on each impingement of the laser on the materials. The performance is similar to that of existing methods based on extracted feature parameters. In each case around 93% of the defects in a database derived from 100 artificially produced defects of known types can be placed into one of two classes: incomplete penetration and bubbling. Especially we present simulator for weld defects classification and data analysis. The present method based on classification using plasma is faster, and the speed is sufficient to allow on-line classification during data collection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Transactions of Materials Processing
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• v.23 no.3
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• pp.159-163
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• 2014

In the current study, the effect of small surface defects in the starting material including roughness, indentations, or scratches, which are perpendicular to the direction of drawing, on the product quality is investigated using the finite element method. An axisymmetric defect is assumed. Such defects are defined by a cylindrical defect area and two tapered regions connecting the defect area to the non-defective area of the material. Various conditions for these initial surface defects are considered, including defect depth, defect slope and defect length. To describe the plastic deformation of the defect in detail during the simulation, local remeshing is applied. Based on the finite element results, defect disappearance maps were generated. It was found that defect disappearance is significantly dependent on the defect depth and the defect length coupled with the defect slope.

• Journal of Welding and Joining
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• v.17 no.2
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• pp.53-60
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• 1999

Conventionally, CCD camera and vision sensor using the projected pattern of light is generally used to inspect the weld bead defects. But with this method, a lot of time is needed for image preprocessing, stripe extraction and thinning, etc. In this study, laser vision sensor using the scanning beam of light is used to shorten the time required for image preprocessing. The software for deciding whether the weld bead is in proper shape or not in real time is developed. The criteria are based upon the classification of imperfections in metallic fusion welds(ISO 6520) and limits for imperfections(ISO 5817).

• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.201-212
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• 2001

If defects are located far apart, fatigue cracks are independently initiated from them and gradually approach other cracks so that the fatigue life becomes influenced by the crack growth behavior of those interacting cracks. In this study, the effect of the stress interaction between defects on the fatigue crack propagation behavior is investigated experimentally and these results are verified by finite element method. In addition, fatigue crack propagation behaviors under micro hole interaction field are studied.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1309-1319
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• 1996

The research for the classification of the natural defects in welding zone is performd using the neuro-pattern recognition technology. The signal pattern recognition package including the user's defined function is developed to perform the digital signal processing, feature extraction, feature selection and classifier selection, The neural network classifier and the statistical classifiers such as the linear discriminant function classifier and the empirical Bayesian calssifier are compared and discussed. The neuro-pattern recognition technique is applied to the classificaiton of such natural defects as root crack, incomplete penetration, lack of fusion, slag inclusion, porosity, etc. If appropriately learned, the neural network classifier is concluded to be better than the statistical classifiers in the classification of the natural welding defects.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.61-61
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• 2003

It is important to know SIze distribution of defects In electroplated trivalent chrome layers because it significantly influences on performance of the layers. Most of the nano-scale defects are able to be introduced by hydrogen evolution during the plating. Little information is available on the nano-size defects. In this study, SANS was applied to determine the size distribution of nano-scale defects in the trivalent chrome layers prepared in a formate bath. The defect size and distribution was dependent upon plating conditions such as current density and applied voltage. SANS is one of useful techniques to determine the nano-scale defect in the electroplated layers.

• Bulletin of the Korean Chemical Society
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• v.16 no.12
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• pp.1184-1189
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• 1995

The rapid quenching dynamics of F center excitation by OH- defects in KCl crystals are investigated by monitoring ground state absorption bleach recovery, using a picosecond streak camera absorption spectrometer. F center absorption bleach in OH--doped crystals shows three distinguishable recovery components with the current temporal resolution, designated as slow, medium and fast components. The slow one is due to the normal relaxation process of F* centers as found in OH--free crystals. The others are consequent on energy transfer from electronically excited F centers to OH--vibrational levels. The fast component is a minor energy transfer process and resulting from the relaxation of somewhat distant, not the closest, associated pairs of F* and OH- defects. The energy transfer between widely separated F* and OH- defects opens up a recovery process via the medium component which is assisted by OH- librations, lattice vibrations and OH- dipole reorientations. The quenching behaviors of F* luminescence and photoionization by OH- are explained well by the relaxation process of the medium component.