• 한국연소학회:학술대회논문집
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• 한국연소학회 1999년도 제19회 KOSCO SYMPOSIUM 논문집
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• pp.93-104
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• 1999

NOx formation in turbulent flames is strongly coupled with temperature, superequilibrium concentration of O radical, and residence time. This implies that in order to accurately predict NO level, it is necessary to develop sophisticated models able to account for the complex turbulent combustion processes including turbulence/chemistry interaction and radiative heat transfer. The present study numerically investigates the turbulent nonpremixed hydrogen jet flames using the laminar flamelet model. Flamelet library is constructed by solving the modified Peters equations and the turbulent combustion model is extended to nonadiabatic flame by introducing the enthalpy defect. The effects of turbulent fluctuation are taken into account by the presumed joint PDFs for mixture fraction, scalar dissipation rate, and enthalpy defect. The predictive capability of the present model has been validated against the detailed experimental data. Effects of nonequilibrium chemistry and radiative heat loss on the thermal NO formation are discussed in detail.

• 교육시설
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• 제15권1호
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• pp.44-52
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• 2008

Amid the rapidly changing constructional business conditions, the volume of BTL business sectors has expanded largely during two or three years. Especially, construction works fur educational facilities of elementary, middle and high schools has been performed by the mid-sized construction companies who are not capable of doing effective and systematic quality management while the requirements of the customers are getting higher and higher. In order to have a flexible deal with the rapidly changing business conditions and also to enhance the quality level, it is the high time to reorganize the effective quality management systeme by doing the overall analysis about the quality defects in construction site. Accordingly through the investigation about the quality defects in the construction sites of domestic educational facilities, this study will focus on what kind of quality defects show. It is aimed at providing the preliminary data for the establishment of quality management fur the construction site of the domestic educational facilities by analysing the investigation results.

• Macromolecular Research
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• 제10권2호
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• Corrosion Science and Technology
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• 제14권6호
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• pp.253-260
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• 2015

The pitting behaviours of 304L and 316L stainless steels were investigated at $3^{\circ}C$ to $90^{\circ}C$ in 1 M solutions of NaCl, NaBr and NaI by potentiodynamic polarization. The temperature dependences of the pitting potential varied according to the anion, being near linear in bromide but exponential in chloride. As a result, at low temperatures grades 304L and 316L steel are most susceptible to pitting by bromide ions, while at high temperatures both stainless steels were more susceptible to pitting by small chloride anions than the larger bromide and iodide. Thus, increasing temperature appears to favour attack by smaller anions. This paper will attempt to rationalise both of the above findings in terms of the point defect model. Initial findings are that qualitatively this approach can be reasonably successful, but not at the quantitative level, possibly due to insufficient data on the mechanical properties of thin passive films.

• The Journal of Korean Physical Therapy
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• 제15권4호
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• pp.24-33
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• 2003

Spondylolysis and spondylolisthesis are two conditions that directly involve changes in the vertebra. Spondylolysis is defined as a defect in the pars interarticularis, the region of the lamina between the superior and inferior articular facets. Progression of the defect can result in spondylolisthesis, which is defined as a subluxation or 'slippage' of two adjacent vertebrae. In the low back it occurs most commonly at the lumbosacral level; next in frequency is spondylolisthesis of the fourth lumbar vertebra on the fifth. To provide the reader with information about the aetiology and anatomical consideration of spondylolysis and spondylolisthesis type. Spondylolisthesis has recently been classified by Wiltse and others into five types based on the suspected aetiology; dysplastic, isthmic, degenerative, posttraumatic, pathologic and postsurgical. Of these five types, isthmic spondylolisthesi and degenerative spondylolisthesis, both of which are frequently associated with low back and lower limb pain.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• 제어로봇시스템학회논문지
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• 제4권4호
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• pp.499-505
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• 1998

In developing an automated surface inspect algorithm, we have designed a hierarchical classifier using neural network. The defects which exist on the surface of cold mill strip have a scattering or singular distribution. We have considered three major problems, that is preprocessing, feature extraction and defect classification. In preprocessing, Top-hit transform, adaptive thresholding, thinning and noise rejection are used Especially, Top-hit transform using local minimax operation diminishes the effect of bad lighting. In feature extraction, geometric, moment, co-occurrence matrix, and histogram ratio features are calculated. The histogram ratio feature is taken from the gray-level image. For defect classification, we suggest a hierarchical structure of which nodes are multilayer neural network classifiers. The proposed algorithm reduced error rate by comparing to one-stage structure.

• 한국구조물진단유지관리공학회 논문집
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• 제1권2호
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• pp.107-113
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• 1997

Nondesructive test and structural analysis have been conducted to assess the safety of weld defective steel bridges in service. In the nondestructive test, using the radioactive ray and ultrasonic, the defective welding patterns in the steel bridges are identified. A major defective welding pattern is identified as the lack of welding area due to the insufficient welding penetration. By considering the welding defect in the above, structural analysis is conducted to evaluate the influence of welding defect on the safety of steel bridges. The results indicate that, due to the insufficient welding penetration, the stress obtained in the analysis is over the allowable fatigue stress level, and its influence on safety of the bridges is significant.

• 대한전자공학회논문지
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• 제24권3호
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• pp.517-526
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• 1987

This paper proposes a new testable design for Zipper CMOS circuits. This design provides an additional feedback loop (called self oscillation loop) whichin the circuit, for testability. The circuit is tested only by observing the oscillation on the loop. The design can be applied to the multistage as well as the single stage, and can detect multiple faults which are undetectable by the conventional testing method. The application and evaluation of test patterns become easy and fault-free responses are not necessary. If the conventional testing method is applied to the sequential Zipper CMOS circuit with the LSSD design technique, it has the serious defect that the initial value may change due to intermediate test patterns and much time taken to apply the necessary test patterns. By using the proposed design, however, the sequential Zipper CMOS circuit with the LSSD design technique can be easily tested without such a defect. Also, the validity of the design is verified by performing the circuit level simulation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.845-848
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• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.