• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.659-659
• /
• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• 한국초전도ㆍ저온공학회논문지
• /
• 제16권1호
• /
• pp.9-13
• /
• 2014

Effects of neutron irradiation on the superconducting properties of the undoped $MgB_2$ and the carbon(C)-doped $MgB_2$ bulk superconductors, prepared by an in situ reaction process using Mg and B powder, were investigated. The prepared $MgB_2$ samples were neutron-irradiated at the neutron fluence of $10^{16}-10^{18}n/cm^2$ in a Hanaro nuclear reactor of KAERI involving both fast and thermal neutron. The magnetic moment-temperature (M-T) and magnetization-magnetic field (M-H) curves before/after irradiation were obtained using magnetic property measurement system (MPMS). The superconducting critical temperature ($T_c$) and transition width were estimated from the M-T curves and critical current density ($J_c$) was estimated from the M-H curves using a Bean's critical model. The $T_cs$ of the undoped $MgB_2$ and C-doped $MgB_2$ before irradiation were 36.9-37.0 K and 36.6-36.8 K, respectively. The $T_cs$ decreased to 33.2 K and 31.6 K, respectively after irradiation at neutron fluence of $7.16{\times}10^{17}n/cm^2$, and decreased to 22.6 K and 24.0 K, respectively, at $3.13{\times}10^{18}n/cm^2$. The $J_c$ cross-over was observed at the high magnetic field of 5.2 T for the undoped $MgB_2$ irradiated at $7.16{\times}10^{17}n/cm^2$. The $T_c$ and $J_c$ variation after the neutron irradiation at various neutron fluences were explained in terms of the defect formation in the superconducting matrix by neutron irradiation.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.20-20
• /
• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• 한국세라믹학회지
• /
• 제53권3호
• /
• pp.317-324
• /
• 2016

Continued miniaturization and increasingly exact requirements for thin film deposition in the semiconductor industry is driving the search for new effective, efficient, selective precursors and processes. The requirements of defect-free, conformal films, and precise thickness control have focused attention on atomic layer deposition (ALD). ALD precursors so far have been developed through a trial-and-error experimental approach, leveraging the expertise and tribal knowledge of individual research groups. Precursors can show significant variation in performance, depending on specific choice of co-reactant, deposition stage, and processing conditions. The chemical design space for reactive thin film precursors is enormous and there is urgent need for the development of computational approaches to help identify new ligand-metal architectures and functional co-reactants that deliver the required surface activity for next-generation thin-film deposition processes. In this paper we discuss quantum mechanical simulation (e.g. density functional theory, DFT) applied to ALD precursor reactivity and state-of-the-art automated screening approaches to assist experimental efforts leading toward optimized precursors for next-generation ALD processes.

• 한국추진공학회지
• /
• 제15권5호
• /
• pp.96-106
• /
• 2011

젤 추진제는 젤 추진 시스템에서 액체 추진 시스템과 같이 제어의 용이성, 저장성, 취급성, 비누설성 등과 같은 장점을 포함한다. 또한, 젤 추진제는 액체 추진제와 비교했을 때 보다 높은 발열량 특성을 나타내며, 금속 입자(알루미늄, 보론)의 첨가로 높은 비추력을 얻을 수 있다. 미립화 특성과 관련하여 젤 추진제는 젤화제의 다양한 점도와 금속 입자의 첨가 정도에 따라 저조한 미립화 특성을 나타낸다. 젤 추진제의 미립화 특성 향상과 연소 효율을 증대 시키기 위해 젤화제의 함유량 변화와 금속 입자의 첨가 정도에 따른 젤 추진제 제조 기술을 바탕으로 동적 분무 특성, 연소 특성 연구를 수행하고 있으며, 이에 대한 연구동향을 소개한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.126-126
• /
• 2016

Understanding adsorption behavior organic molecules at oxide surfaces is very important for the application of organic-inorganic hybrid materials. Recently, monoethanolamine (MEA) adsorbed on $TiO_2$ surface has received great interests because it can lower the work function of $TiO_2$ in photo-electronic devices such as OLED and solar cells. In this study, we investigated the role of surface defects in adsorption behaviors of MEA at the rutile $TiO_2$ (110) surface by combined study of scanning tunneling microscopy and density functional theory calculations. Our results revealed that oxygen vacancy is the most stable adsorption site for MEA on $TiO_2$ (110) surface at low coverage. As coverage increases, the oxygen vacancies are occupied with the molecules and MEA molecules start to adsorb at Ti rows at higher coverages. Our results show that the defects at oxide surfaces and the intermolecular interactions are important factors for determining stable adsorption structure of MEA at $TiO_2$ (110) surfaces.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.215.2-215.2
• /
• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• 한국세라믹학회지
• /
• 제29권11호
• /
• pp.900-904
• /
• 1992

High temperature electrical conductivity was measured for perovskite La0.98Sr0.02MnO3 at 200~130$0^{\circ}C$ as a function of Po2 and 1/T. Perovskite La1-xSrxMnO3 system is the typical oxygen electrode in solid oxide fuel cell (SOFC). Acetate precursors were used for the preparation of mixed water solution and the calcined powders were reacted with Na2CO3 flux in order to obtain highly reactive powders of perovskite La0.98Sr0.02MnO3. The relative density was greatly increased above 90% because of the homogeneous sintering. From the conductivity ($\sigma$)-temperature and conductivity-Po2 at constant temperature, the defect structure of La0.98Sr0.02MnO3 was discussed. From the slope of 1n($\sigma$) vs 1/T, the activation energy of 0.069 and 0.108eV were evaluated for above 40$0^{\circ}C$, respectively. From the relationship between $\sigma$ and Po2, it was found that the decomposition of La0.98Sr0.02MnO3 was occurred at 10-15.5 atm(97$0^{\circ}C$) and 10-11 atm(125$0^{\circ}C$). It is supposed that the improvement of p-type conductivity may be leaded by the increase of Mn4+ concentration through the substitution of divalent/monovalent cations for La site in LaMnO3.

• 한국세라믹학회지
• /
• 제29권4호
• /
• pp.65-65
• /
• 1992

12Ce-TZP의 소결에 미치는 CaO의 역할에 대하여 연구하였다. CaO의 첨가는 Ce-TZP의 격자결함구조와 확산의 율속종인 cerium과 zirconium 이온의 확산계수를 변화시켜 치밀화를 촉진시킨다. CaO는 또한 소결과정중 결정립 성장을 억제하며, 이는 소결과정중 임계 이동시 입계로부터의 기공의 분리를 방지함과 동시에 기공으로부터 입계로의 공격자의 빠른 확산을 유지시킴으로써 이론밀도까지의 소결을 가능하게 한다. Ce-TZP의 결정립 성장 억제는 calcium의 입계편석에 의한 입계 이동도의 감소에 의하며, calcium의 입계편석을 AES 분석으로 확인하였다.

• 한국세라믹학회지
• /
• 제32권3호
• /
• pp.313-320
• /
• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.