• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.22-25
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• 2020

Deep red EuSi₂O₂N₂ phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi₂O₂N₂ ICSD card # 41-6046 (a monoclinic crystal system with space group of P2₁/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f⁶5d¹ - 4f⁷ of Eu²⁺ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.102-103
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• 2008

Magnetron Sputtering, MOCVD, Thermal Evaporation에 의해 성장된 ZnO layer에 대한 Dependency Temperature Photoluminescence (PL)를 이용하여 비교 분석을 통해 Deep level emission에 대해 연구하였다. Sputter에 의해 성장된 ZnO 박막은 Violet, Green, Orange-red 영역의 $Zn_i$, $V_o$, $O_i$의 defect에 의한 Deep level emission을 보였고, MOCVD에 의해 성장된 박막은 비교적 산소양이 낮은 성장 조건에서는 blue-green 영역에서, 산소양이 높은 조건에서의 박막은 Orange-red 영역의 Deep level emission을 보였다. Blue-green 영역에서의 emission은 온도가 증가함에 따라 다른 Barrier를 보였는데, 이는 $V_{Zn}$와 $V_o$에 의한 것임을 알 수 있었다. 한편, ZnO nanorods는 $V_o$에 의한 Green 영역에서의 Deep level emission을 보였다.

• Journal of Ceramic Processing Research
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• v.20 no.1
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• pp.80-83
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• 2019

The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.312-317
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• 2017

In the construction of a white LED, the region of the red emission is a very important factor. Red light emitting materials play an important role in improving the color rendering index of commercial lighting. These materials also increase the color gamut of display products. Therefore, the development of novel phosphors with red emission and the study of color tuning are actively underway to improve product quality. In the present study, heuristic algorithms were used to search for phosphors capable of increasing the color rendering index and color gamut. Using a heuristic algorithm, the phosphors that were identified were $SrGe_4O_9:Mn^{4+}$ and $BaGe_4O_9:Mn^{4+}$. Emission spectra study confirmed that these phosphors emit light in the deep red wavelength region, which can fulfill the requirement for the improvement in color rendering index and color gamut for a white LED.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.63-68
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• 1999

In this paper, the correlation between the growth mechanism and the optical property in GaN films grown by low-pressure metalorganic chemical vapor deposition was characterized using room temperature cathodoluminescence spectroscopy. An intense near band-edge emission, 364nm, and deep-level emission, 550nm, were observed. The intensity of 364nm peak was increased with increasing the beam current. Also the peak position of 364nm emission was red-shifted and the intensity of 550nm peak was increased with increasing the accelerating voltage. It shows that the deep-level emission is strongly associated with crystalline defects in the GaN at early stage. The relationship between the microstructure and the deep level emission observed by scanning electron microscope images and cathodoluminescence spectra was carefully analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.121-124
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• 2000

Achieving red light-emitting diodes with high quantum and luminous efficiency is required to fabricate the full-color organic electroluminescence display. In this work, we report that devices with 2.3,7,8,12,13,17,18-Octaethyl-21H,23H-porphine palladium (II) (PdOEP), doped into tris(8-Hydroxyquinolinato)-aluminum (III) (Alq3) show a narrow deep red emission (670nm). In addition, PdOEP has been used as host material in which red dyes such as 4-(Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) doped in order to fabricate efficient red-emitting diodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1075-1078
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• 2006

New iridium complex was synthesized and demonstrated a deep red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of 8320 cd/m2 at 15 V and the luminance efficiency of 2.5 cd/A at 20 mA/cm2 were achieved. The peak wavelength of the electroluminescence was at 626 nm with the CIE coordinates of (0.69, 0.30), and the device also showed a stable color chromaticity with various voltages.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.1
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• pp.1-16
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• 2023

A non-rare earth-based strontium-aluminate red light emitting phosphor was synthesized by a solid-state reaction method and the effect of synthesis temperature and Mn⁴⁺ activator concentration on the photoluminescence characteristics of the phosphor was studied. The synthesized SrAl₂O₄:Mn⁴⁺ phosphor showed broad band absorption characteristics in the near-ultraviolet and blue regions with peaks at wavelengths of near 330 and 460 nm, and a triple band deep red emission consisted of three peaks at near 644, 658, and 673 nm. The SrAl₂O₄:Mn⁴⁺ phosphor synthesized at a temperature 1600℃ and a Mn⁴⁺ activator concentration of 0.5 mol% showed the strongest PL emission intensity, and concentration quenching was observed at concentrations higher than 0.7 mol%. FE-SEM and DLS particle size distribution analysis showed that the synthesized SrAl₂O₄:Mn⁴⁺ phosphor had a particle size distribution of 2~6.4 ㎛ and an irregular spherical shape with an average particle size of ~4 ㎛.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.194-198
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• 2004

The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe contaminations significantly enhanced the PL intensity of PS. All the PS samples formed on Fe-contaminated silicon substrates had stronger PL yield than that of reference PS without any intentional Fe contamination but the emission peak is not significantly changed. For the PS 1000 sample with Fe contamination of 1,000 ppb, the maximum PL intensity showed about ten times stronger PL than that of the reference PS sample. From PL and DLTS results, the PL efficiency strongly depends on the Fe-related trap concentration in Si substrates.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.231-234
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• 2006

To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.