• 자원환경지질
• /
• 제48권4호
• /
• pp.301-312
• /
• 2015

동해 울릉분지 남서주변부는 탄화수소의 부존 가능성이 높은 대륙붕 환경으로 1990년대 말에 상업적 생산이 가능한 가스전이 발견된 바 있다. 가스전과 인접한 연구지역에서도 추가적인 가스개발을 위해 침식수로 내부의 조립질 퇴적체를 대상으로 시추가 수행되었지만 경제성이 부족한 것으로 판명되었다. 본 연구에서는 새로 취득된 탄성파 및 기존 시추 자료를 이용하여 울릉분지 남서주변부에 분포하는 침식수로 하부에 탄화수소 트랩 가능성이 있는 지질구조를 탐지하였다. 취득된 심부 탄성파 자료 및 시추자료 해석에 의하면 연구지역에 분포하는 퇴적층은 구조진화와 연계하여 열개동시성 퇴적층군(MS1), 후열개 퇴적층군(MS2), 횡압력 동시성 퇴적층군(MS3), 후횡압력 퇴적층군(MS4)으로 구분된다. 중기 마이오세 이전에 분지형성과 동시에 퇴적된 MS1은 주로 중-저진폭, 저주파수의 캐오틱 음향특성을 나타낸다. 중기 마이오세 동안 분지가 확장되며 다량의 퇴적물이 유입된 MS2는 중-저진폭의 음향특성과 함께 연속성이 양호하며 전진퇴적 양상을 나타낸다. MS3은 고진폭 및 중-고주파수의 연속성이 양호한 반사면을 나타내는데 이는 조립질 퇴적층으로 해석된다. 조립질 퇴적물이 우세한 MS3는 침식수로에 의해 광역적으로 삭박되었으며 침식수로 내부에는 MS4의 세립질 퇴적물이 충전되어 층서트랩을 형성한다. 따라서 연구지역의 트랩 구조는 MS3의 조립질 퇴적층이 저류층을 형성하며 MS4의 세립질 퇴적물로 충전된 침식수로가 덮개암으로 작용하는 층서 트랩으로 트랩 구조 내부에서는 탄화수소 부존을 지시하는 flat-spot 탄성파 이상대가 발달한다.

• Journal of Radiation Protection and Research
• /
• 제47권3호
• /
• pp.134-142
• /
• 2022

Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLD_exp), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLD_cont). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLD_exp, the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLD_cont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLD_exp and OSLD_cont exhibited good linearity, by showing coefficients determination (R²) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.133-133
• /
• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
• /
• pp.97-100
• /
• 1992

The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130～270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

• 전기전자학회논문지
• /
• 제27권4호
• /
• pp.556-560
• /
• 2023

본 연구에서는 4H-SiC Epi Surface에 Nitrogen implantation 공정이 깊은준위결함과 lifetime에 미치는 영향을 비교분석하였다. Deep Level Transient Spectroscopy (DLTS)와 Time Resolved Photoluminescence (TR-PL)을 사용하여 깊은준위결함과 carrier lifetime을 측정하였다. As-grown SBD에서는 0.16 eV, 0.67 eV, 1.54 eV 에너지 준위와 implantation SBD의 경우 0.15 eV 준위에서의 결함을 측정되었으며, 이는 nitrogen implantation으로 불순물이 titanium 및 carbon vacancy를 대체됨으로 lifetime killer로 알려진 Z_1/2, EH_6/7 준위 결함은 감소하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제15권4호
• /
• pp.207-212
• /
• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.191.2-191.2
• /
• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• Ocean and Polar Research
• /
• 제33권spc3호
• /
• pp.385-395
• /
• 2011

Time-series sediment traps were deployed at 1,000 m water depth of the northwestern subtropical Pacific from July 2009 to June 2010, with the aim of understanding temporal and spatial variations of sinking-particle fluxes. The opening and closing of the traps was synchronized at 18-day periods for 20 events. Total mass fluxes showed distinct seasonal variations with high values for the summer-fall seasons and relatively low values for winter-spring. This seasonal variation at two stations was characterized by a distinct difference in $CaCO_3$ fluxes between the two seasons. The enhanced $CaCO_3$ flux in the summer - fall seasons might be attributed to an increased planktonic foraminiferal flux. Total mass flux at FM10 station was nearly 50% higher than that at FM1 station. The difference in $CaCO_3$ fluxes between two stations contributed nearly 70% of the difference of total mass fluxes. The $CaCO_3$ flux was a major component controlling temporal and spatial variation of sinking - particle fluxes in the western subtropical Pacific Ocean.

• Ocean and Polar Research
• /
• 제25권1호
• /
• pp.41-52
• /
• 2003

Sediment trap samples were collected to find out characteristic behaviors of metals in the settling particles by using time-series sediment traps at 678m and 1678m water depths in the Bransfield Strait from December 27th, 1999 to December 26th, 2000. Total mass fluxes at the intermediate water depth (678m water depth) were high in the austral summer and low in the austral winter, whereas at the deep water depth (1678m water depth) they showed high values in both the summer and winter. Total mass fluxes were generally higher in the deep water depth than in the intermediate water depth, which indicates that a substantial amount of sediments are laterally transported by strong currents into the deep basin from the shallow water depths. Aluminium contents also showed large seasonal variations with high values in the winter and low values in the summer. On the contrary, organic carbon contents were high in the summer and low in the winter. Al contents were negatively correlated with organic carbon contents, which may be ascribed that detrital particles are diluted by organic matter produced by phytoplankton in the surface waters. Metals measured in this study exhibited three characteristic behaviors; 1) a positive correlation with Al-Ti, Fe, Mn, V, Co, and Ba, 2) a negative correlation with Al-Cd and Zn, 3) no relationship with Al-Sr, Cu, Cr, Ni. Terrestrial materials may act as a major source fer metals that are positively correlated with Al, and organic matter may be a major source for metals that are negatively correlated with Al. Enrichment factor (EF) of Fe, Mn, Ba, Vi Co, Sr, Cr, and Ni ranged from 0.5 to 1.5, whereas EF of Zn, Cu, and Cd showed much higher values than 1.

• Journal of Radiation Protection and Research
• /
• 제9권1호
• /
• pp.3-10
• /
• 1984

The properties of $Al_2O_3$ thermoluminescent phosphor have been observed to apply for gamma dosimetry in vivo. Glow peaks at 380, 420, 490 kelvin temperature with emission in the blue region have been detected and calculated as 1.4 eV the activation energy by means of heat response rising time method. Sensitization and supralinearity in $Al_2O_3$ phosphor could be consistently explained by the deep trap model. Studies of the thermoluminescence growth rate with gamma ray exposure showed linearly to $10^4$ Roentgen and then supralinear rate detected 1.2 power of exposure dose sensitization of $Al_2O_3$ is described five times more than TLD-100 and the fading time is shorter and then tried to apply for gamma dosimetry in vivo.