• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.457-457
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• 2013

Current-voltage (I-V) measurements of crystalline silicon solar cells was conducted under dark conditions with the temperature range of 260 K~350 K. Using the calculation method, we extracted the crucial factors of ideality factor (n) and activation energy (Ea) to investigate the carrier conducting path in the space charge region (SCR) and the quasi-neutral region (QNR). Values of n were decreased with increasing temperature in both SCR and QNR. We also conformed that the value of Ea of SCR was larger than that of QNR about 0.4 eV. The temperature dependence of n indicates that the carrier conducting path is dominated by carrier recombination-generation in the SCR region than in the QNR region.

• Journal of Electrochemical Science and Technology
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• 제1권2호
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• pp.81-84
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• 2010

In dye-sensitized solar cells (DSSCs), the back transfer of photo-generated electrons from FTO glass to triiodide ions in an electrolyte is an important loss mechanism, which leads to low cell efficiency. Recently, this back electron transfer was greatly suppressed by the introduction of a compact $TiO_2$ blocking layer, which was prepared by the treatment of $TiCl_4$ solution. In the present work, more detailed $TiCl_4$ treated surface conditions on FTO substrate were investigated and DSSC performances were correlated with the surface morphology as well as dark current behavior.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.587-589
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• 2009

The mode (reflective and transmissive) switchable LCD has been developed by using a treated SR (Selective Reflector) polarizer. We believe that our approach will be a solution to overcome weak points for a reflective and transflective mode in a dark environment and a transmissive mode in a bright environment. Therefore, this can minimize power consumption, and also be easily fabricated in a current manufacturing process, ready for large sizes.

• ETRI Journal
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• 제13권4호
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• pp.52-57
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• 1991

We fabricated very high. speed PIN Photodiode module for the application of high speed optical receiver. OMVPE was used for the growth of InP layer on InGaAs absorption layer. The structure was the combination of mesa and planartype. Fabrication procedure was more complicated than simple mesa or simple planar type structure because we used semiinsulating InP substrate in order to reduce stray capacitance. The results at-5V were as follows : dark current was less than 1nA, capacitance was 0.55pF, and cutoff frequency was above 3GHz, and rise and fall time was about 100ps.

• 천문학회지
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• 제34권2호
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• pp.81-97
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• 2001

Since the first proposal by Paczynski, great efforts to detect Galactic dark matter by detecting light variations of stars located in the Magellanic Clouds and Galactic bulge caused by gravitational microlensing have been and are being carried out and more than 1,000 events have been successfully detected. In this paper, we review the progress in the theoretical and experimental progresses in microlensing. We begin with basics of microlensing and summarize the results obtained from the last 8 year observations along with the implications of the results. We also discuss the usefulness of microlensing in other fields of astronomy such as the stellar atmosphere, Galactic binary systems, and extra-solar planets. We finally discuss the problems of the current experiments and the new types of observations that can overcome these problems.

• 천문학논총
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• 제30권2호
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• pp.367-369
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• 2015

The FastSound project is a galaxy redshift survey using Subaru/FMOS to detect $H{\alpha}$ emitting galaxies at z ~ 1:3, for the purpose of probing the origin of the accelerated expansion of the universe. The survey has detected ~4,000 galaxy redshifts in a total area of $30deg^2$, and detected the redshift space distortion at this redshift range for the first time. The redshift space distortion (RSD) signal will be used to derive a measurement of the growth rate of large scale structure, which will provide a test for modified gravity as a possible origin of accelerated cosmic explansion. Here we present an overview and the current status of the project.

• 한국광학회지
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• 제10권3호
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• pp.214-220
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• 1999

광자감쇠 분광신호에 실린 오차와 감쇠시간 편차와의 관계를 이론적으로 계산하였고 shot noise와 디지털오차에 의한 감쇠시간 편차로부터 측정 가능한 흡수율의 한계를 계산하였다. 광자감쇠 공동의 정렬과 관련된 오차와 공동 내부의 기체 압력에 따른 감쇠시간 변화 그리고 거울에서의 간섭에 의한 감쇠시간의 변화를 규명하였다.

• Journal of information and communication convergence engineering
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• 제1권1호
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.505-508
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• 2001

Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.3%, and the removal effect of latent charge by using light erase method was its 95.5%.

• 센서학회지
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• 제17권5호
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.