• Title/Summary/Keyword: Dark Current

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Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method (Hot Wall Epitaxy(HWE)법에 의한 MnAl2S4 단결정 박막 성장과 광전도 특성)

  • You, Sangha;Lee, Kijeong;Hong, Kwangjoon;Moon, Jongdae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.6
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    • pp.229-236
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    • 2014
  • A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

Improved Device Performance Due to AlxGa1-xAs Barrier in Sub-monolayer Quantum Dot Infrared Photodetector

  • Han, Im Sik;Byun, Young-Jin;Lee, Yong Seok;Noh, Sam Kyu;Kang, Sangwoo;Kim, Jong Su;Kim, Jun Oh;Krishna, Sanjay;Ku, Zahyun;Urbas, Augustine;Lee, Sang Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.298-298
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    • 2014
  • Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

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The Design and Fabrication of Conversion Layer for Application of Direct-Detection Type Flat Panel Detector (직접 검출형 평판 검출기 적용을 위한 변환층 설계 및 제작)

  • Noh, Si-Cheol;Kang, Sang-Sik;Jung, Bong-Jae;Choi, Il-Hong;Cho, Chang-Hoon;Heo, Ye-Ji;Yoon, Ju-Seon;Park, Ji-Koon
    • Journal of the Korean Society of Radiology
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    • v.6 no.1
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    • pp.73-77
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    • 2012
  • Recently, Interest to the photoconductor, which is used to flat form X-ray detector such as a-Se, $HgI_2$, PbO, CdTe, $PbI_2$ etc. is increasing. In this study, the film layer by using the photoconductive material with particle sedimentation was fabricated and evaluated. The quantization efficiency of the continuous X-ray with the 70 kVp energy bandwidth was analyzed by using the Monte Carlo simulation. With the results, the thickness of film with 64 % quantization efficiency was 180 ${\mu}m$ which is similar to the efficiency of 500 ${\mu}m$ a-Se film. And $HIg_2$ film has the high quantization efficiency of 74 % on 240 ${\mu}m$ thickness. The electrical characteristics of the 239 ${\mu}m$ $Hgl_2$ films produced by particle sedimentation were shown as very low dark current(under 10 $pA/mm^2$), and high sensitivity(19.8 mC/mR-sec) with 1 $V/{\mu}m$ input voltage. The SNR, which is influence to the contrast of X-ray image, was shown highly as 3,125 in low driving voltage on 0.8 $V/{\mu}m$. With the results of this study, the development of the low-cost, high-performance image detector with film could be possible by replacing the film produced by particle sedimentation instead to a-Se detector.

Qualitative Analysis of $GeO_2$ in Germanium-Fortified Yeast. (게르마늄강화효모 내의 $GeO_2$ 정성분석)

  • Kim, So-Yeun;Kim, Myoung-Hee;Woo, Hee-Gweon;Kim, Bo-Hye;Sohn, Tsang-Uk;Jung, Jin-Wook;Baek, Dae-Heoun
    • Microbiology and Biotechnology Letters
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    • v.35 no.2
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    • pp.163-172
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    • 2007
  • This study was designed to investigate that inorganic germanium $(GeO_2)$ did not exist in germanium-fortified yeast or obtained to non-detectable value by current analytical methods and equipments. For this purpose, we achieved $GeO_2$ qualitative analysis protocol which could be the scientific basis of the study. Since reddish brown precipitate was formed from the reaction of $GeO_2$ with 1 equiv $NaBH_4$, and dark brown precipitate was also formed from the reaction of $GeO_2$ with 2 equiv $NaBH_4$, $GeO_2$ was qualitatively analyzed by observing these particular colored-precipitates. Because no color change was showed from the reaction between $NaBH_4$ and $SiO_2$, the color change could be caused by charge transfer transition on Ge-O and B binding properties. The reaction between $NaBH_4$ and germanium-fortified yeast did not show any color change and precipitate formation which meant no $GeO_2$ existed in germanium-fortified yeast. The reaction between $NaBH_4$ and supernatant specimen collected from the outside of dialysis membrane (MWCO 1,200 dalton) did not show any color change and precipitate formation. Therefore, we considered that the both germaniums in and outside of the dialysis membrane were organic germaniums. Germanium-fortified yeast which was biosynthesized organic germanium can be applied not only as a new functional material for improving health, prevention and treatment of chronic degenerative diseases including cancers, and the regulation of immune system, but also as a new materials.

Effects of storage duration and temperature on the isoflavone content of full grown soy-sprouts (재배 콩나물 저장 중 온도처리가 isoflavone 함량에 미치는 영향)

  • Jeong, Yeon-Shin;Lee, Hyang Mi;Dhakal, Krishna Hari;Kim, Yong-Hoon;Lee, Jeong-Dong;Shin, Dong-Hyun;Hwang, Young-Hyun
    • Current Research on Agriculture and Life Sciences
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    • v.26
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    • pp.55-62
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    • 2008
  • To obtain food materials of high isoflavone content from soy-sprouts, 8 soy-sprout varieties, Aga 1, Aga 2, Aga 3, Aga 4, Pungsannamulkong, Eunhakong, Jangkikong and Bosugkong, were grown into soy-sprouts for 7 days under light condition and stored for 5 days at 6 different temperatures; 3, 6, 9, 20, 30, and $40^{\circ}C$ in the dark. The isoflavone content of 7 days grown sprout varieties were highest in the order of Aga 3>Aga 1>Aga 2>Aga 4>Jangkikong>Bosugkong>Eunhakong>Pungsannamulkong. The highest isoflavone content of Aga 3 was $4,619{\mu}g/g$. The isoflavone content of soy-sprouts showed much varietal differences depending on the storage temperatures. Comparative high isoflavone content was obtained at storage temperatures of $6^{\circ}C$ and $20^{\circ}C$ while most of varieties showed low isoflavone content at $9^{\circ}C$ and $30^{\circ}C$. No constant trend in isoflavone content for the tested varieties along with the days to storage but most of varieties showed the highest isoflavone content in 3 days of storage. On the contrary, Aga 4 and Jangkikong showed high isoflavone content even at 5 days of storage. The comparatively high isoflavone content for 4 varieties including of Aga 3 out of 8 varieties was obtained from the treatment of one day storage at $20^{\circ}C$. Out of all treatments, the highest isoflavone content was obtained from one day storage at $20^{\circ}C$ for Aga 3 and the content was as high as $11,705{\mu}g/g$. In this experiment, soy-sprouts were believed to be made continuous growth during the storage because the sprouts were being dipped in water during the temperature treatment to protect soy-sprouts from drying. Thus, it is inferred that additional researches should be made to establish better method to increase isoflavone content in soy-sprouts during the storage.

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Detection of Auxotrophic Mutants form Valsa ceratosperma, the Causal Fungus of Apple Canker (사과나무 부란병균(腐爛病菌) Valsa ceratosperma에서의 Auxotrophic Mutants의 검출(檢出))

  • Hong, Yeon Gyu;Uhm, Jae Youl
    • Current Research on Agriculture and Life Sciences
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    • v.5
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    • pp.119-126
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    • 1987
  • This study was conducted to elucidate the most appropriate method to obtain auxotrophic mutants from Valsa ceratosperma, the causal fungus of apple canker, which may be used as a gene marker in detecting the transfer of the factors of avirulent strains to virulent strains. Among the 3 kinds of synthetic media tested, each have two formula for minimal and complete, the medium which has been used in study of Endothia parasitica (E. P medium) was turned out to be most appropriate for the growth of V. ceratosperma. A medium for single colony formation from pycnidiospore of this fungus was developed by adding 0.5% L - sorbose to the E. P minimal medium. The period of incubation in dark for preventing the photoreactivation after U. V irradiation was estimated as about 60hrs at which most of the spores become binucleate. Largest number of putative auxotrophs were obtained at about 50second of irradiation to the spores smeared on the medium for single colony formation, at which the survival rate of spores was 5 to 6 percent. With these method developed in this experiment, 161 isolates of putative auxotrophs were detected among which the nutrient requirement for 10 isolates were determined. Five out of 10 mutants were still virulent to apple tree and all but one could not sporulate.

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Characteristics of New Microsporidia S80 Isolated from Silkworm, Bombyx mori L. in Korea (가잠(家蠶)으로부터 분리(分離)된 새로운 Microsporidia S80의 특성(特性))

  • Lim, Jong Sung;Cho, Sae Yun
    • Current Research on Agriculture and Life Sciences
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    • v.1
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    • pp.67-83
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    • 1983
  • The new microsporidia S80 isolated from, Bombyx mori L. in Korea showed ovoid in the morphology of the spores and the size were measured $2.9{\pm}0.28{\mu}$ in length and $1.7{\pm}0.29{\mu}$ width. No other microsporidian spore like this has not been so far isolated from Silkworm. The length of the polar filament extruded in hydrogen peroxide ($H_2O_2$) at $30^{\circ}C$ was $26{\mu}$ of a round cytoplasm on the top. The spores were partly stained with Giemsa, Safranin-O and Gram as the same staining properties as Nosema bombycis, Microsporidia K 79 and other microsporidian spores. The fine structures were observed under scanning eleceron microscope through ultrathin sectioning. The spore wall was composed of three layers ; the thin exospore of an electron dense rippled layer, the thick electron lucent endospore which was thinning considerably at the polar filament insertion point, and the inner limiting membrane. Polar cap present at the sporeapex, with a long polar filament of 12-13 coils, subtending angle of $60^{\circ}$ to spore axis, which is tubular made up of a multilayered and are a benes core, light ring structure enclosing the dance core, the dark ring structure enclosing the inner light ring structure and the other than and light ring structure bounded from cytoplasm. Lamellate polaroplast occupied the anterior part of the spore, and the two neclei with dense nucleoplasm bounded by a double nuclear envelope were cited in the slight downer middle portion of spore. From the characteristics of the shape, size and fine structures, it is certain to reason the Microsporidia S80 belong to the phylum Microspora, class Microspora, order Microsporida, order Microsporida. The shape of two nuclei cited seems to be genus Nosema, but in the classification for the suborder it should be defined wheather pansporoblasts be formed or not and for the genis especial attempts have been made to define the characters which distinguish the disporous genera in the life cycle. Survey through the infection of the bad cocoons during 1980 to 1982 in South Korea the areas contaminated with new microsporidia were revealed 5 provinces of Kyung-Gi, Kang-Won, Chung-Nam and Chun-Nam. Pathological effects inoculated per os at second instar larvae of silkworm, the LD 50 was $7.1{\times}10^7/ml$ as lower pathogenecity than that of Nosema bombycis Naegeli of $1.2{\times}10_7/ml$. While on the other hand the inoculation of the microsporidia at fourth instar larvae lowerd the whole cocoon weight and cocoon shell weight and significant at 1% level. The microsporidia S80 defined it can not be transmitted transovarially from the result of predictive and collective examination of 21 egg batches from the infected female moth.

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