• Title/Summary/Keyword: DOT 4.2

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Fabrication of the Plasma Focus Device for Advanced Lithography Light Source and Its Electro Optical Characteristics in Argon Arc Plasma (차세대 리소그래피 빛샘 발생을 위한 플라스마 집속 장치의 제작과 아르곤 아크 플라스마의 발생에 따른 회로 분석 및 전기 광학적 특성 연구)

  • Lee S.B.;Moon M.W.;Oh P.Y.;Song K.B.;Lim J.E.;Hong Y.J.;Yi W.J.;Choi E.H.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.380-386
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    • 2006
  • In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

Genomic DNA probe and purification of Theileria sergenti merozoites in Korean cattle (한우에 감염된 Theileria sergenti merozoite의 순수분리와 genomic DNA probe에 관한 연구)

  • Chae, Joon-seok;Lee, Joo-mook;Kwon, Oh-deog;Chae, Keon-sang
    • Korean Journal of Veterinary Research
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    • v.34 no.2
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    • pp.387-394
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    • 1994
  • To make the genomic DNA probe of Theileria sergenti, the merozoites were purified from bovine erythrocytes. The infected erythrocytes were lysed by Aeromonas hydrophila(Ah-1) hemolysin, and the parasites were isolated by ultracentrifugation on a Percoll discontinuous density gradient. For construction of a T sergenti genomic DNA library, T sergenti DNA was digested with Pstl and the fragments were ligated into the PstI site of pUC19 before transformation of Escherichia coli JM83. Out of thousands of transformants obtained by transformation of E coli JM83 with the genomic library, three plasmids were chosen. The sizes of the inserted DNAs were 2.9kb(2.4kb and 0.5kb) in pKTS1, 4.3kb in pKTS2 and 1.5kb in pKTS3, respectively. The DNA fragments used as probe KTS1(2.4kb), KTS2(4.3kb) and KTS3(1.5kb) were labeled digoxigenin-11-dUTP for the Southern hybridization. In Southern hybridization, all of the probes(KTS1, KTS2 and KTS3) reacted specifically to T sergenti DNA, but not to bovine leucocyte DNA. In order to find out the sensitivities of the digoxigenin-11-dUTP-labeled KTS1 and KTS3 as the probes, purified merozoite DNA and bovine DNA (control) were checked by dot blot hybridization with the probes. Both of the probes, KTS1 and KTS3, detected as minimum amount of 975pg of the T sergenti DNA, but not bovine DNA even to 500ng.

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Si(111) 기판에 높은 공간밀도를 갖는 InN 양자점 핵생성 연구

  • Lee, Hyeon-Jung;Jo, Byeong-Gu;Lee, Gwan-Jae;Choe, Il-Gyu;Kim, Jin-Su;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.227-227
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    • 2013
  • 본 연구에서는 Si(111) 기판에 성장온도 및 InN 증착양 변화에 따른 InN 양자점(Quantum Dot) 핵성생(Nucleation) 특성에 대해 논의한다. InN 양자점은 Nitrogen-Plasma 소스를 장착한 분자선증착기(MBE)를 이용하여 $0.103{\AA}/s$의 성장속도로 성장하였다. 성장온도를 $700^{\circ}C$에서 $300^{\circ}C$로 변환하면서 형성한 시료에서 lnN 양자점의 공간밀도는 $9.4{\times}10^7/cm^2$부터 $1.1{\times}10^{11}/cm^2$를 나타냈다. 가장 높은 공간밀도인 $1.1{\times}10^{11}/cm^2$는 기존에 보고된 값 ($7.7{\times}10^{10}/cm^2$)보다 상대적으로 높은 값을 갖는다 [1,2]. InN 증착양을 93, 186, 및 $372{\AA}/s$으로 각각 변화시켜 형성하여 양자점의 초기 성장거동을 분석하였다. InN 증착양이 증가함에 따라 양자점의 공간밀도는 $4.4{\times}10^{10}/cm^2$$6.4{\times}10^{10}/cm^2$까지 증가하였다. 일반적으로 InP 및 GaAs 기판을 기반으로 한 In(Ga)As 양자점은 증착양이 증가함에 따라 밀도는 감소하고 크기는 증가하는 경향을 보이며, 이는 같은 상 (Phase)을 갖는 물질들끼리 결합하려는 경향이 있기 때문이다. 본 실험에서는 기존 결과와 다른 경향을 보이고 있는데, 이는 Si(111) 기판과 InN 사이의 격자부정합이 상대적으로 크기 때문에 InN 양자구조가 커지는 대신 추가로 새로운 핵생성 메커니즘에 의한 것으로 설명할 수 있다. 이러한 InN 증착양에 따른 InN 양자점 성장거동을 표면에너지를 포함한 이론적인 모델을 통해 논의하고자 한다.

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Recovery of Etching Damage of the etched PZT Thin Films With $O_{2}$ Re-Annealing. ($O_{2}$ re-annealing에 의한 식각된 PZT 박막의 식각 damage 개선)

  • Kang, Myoung-Gu;Kim, Kyoung-Tae;Kim, Chang-Il;Chang, Eui-Goo;Lee, Byeong-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.8-11
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    • 2001
  • In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

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Molecular Theory of Superplastic Deformation (초소성변형의 분자론)

  • Chang Hong Kim;Taikyue Lee
    • Journal of the Korean Chemical Society
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    • v.23 no.4
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    • pp.217-236
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    • 1979
  • The author's theory for plastic deformation was applied to superplastic alloys (Zn-Al eutectoid, Al-Cu, Pb-Sn, Sn-Bi, Mg-Al eutectics). The plastic deformation of the superplastic alloys could be described by two Maxwell models connected in parallel which represent two grain boundary flow units. The flow units are characterized by the two parameters $X_{gj}/{\alpha}_{gj}\;and\;{\beta}_{gj}$ (j=l or 2, g signifies the grain boundary) the values of which were obtained by applying our flow equation [Eq. (5)] to experiment. We confirmed that our flow equation describes the superplasticity very well. The curve of strain rate sensitivity m (=${\partial}\;In\;f/{\partial}\;In\;\dot{s})\;vs.\;-In\dot{s}$, where f and s are stress and strain rate, respectively, showed two peaks corresponding to flow unit gl and g2, the separation of the two peaks is determined by the difference between ${\beta}_{g1}\;and\;{\beta}_{g2}$. The condition of superplasticity is also determined by ${\beta}_{gj}$, which satisfies $\dot{s}_{mj}{\leqslant}1.53}{\beta}_{gj}$ [Eq.(13)], where $\dot{s}_{mj}$ is the s of the jth unit at the peak. The grain size dependence of ${\beta}_{gj}$ is described by $ln({\beta}_{gj})^{-1}$=alnx+b [Eq. (16)], where x is the grain size, and a and b are constants. The activation enthalpy for each flow unit, ${\Delta}H_{gj}^{\neq}$ was also determined from the temperature dependence of ${\beta}_{gj}$ which is proportional to the relaxation time of the j th unit. Since the superplasticity is determined by Eq. (13), and since ${\beta}_{gj}$ and ${\Delta}H_{gj}^{\neq}$ are related, we obtained the conclusion that superplasticity occurs in the system having small ${\Delta}H_{gj}^{\neq}$ values. The Aej values were equal to the activation enthalpies of grain boundary self-diffusion of the component atoms of the alloys, this accords with our proposed flow mechanism. The ${\Delta}H_{gj}^{\neq}$ value increases with grain size as expected from Eq. (16).

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MCBP Neural Netwoek for Effcient Recognition of Tire Claddification Code (타이어 분류 코드의 효율적 인식을 위한 MCBP망)

  • Koo, Gun-Seo;O, Hae-Seok
    • The Transactions of the Korea Information Processing Society
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    • v.4 no.2
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    • pp.465-482
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    • 1997
  • In this paper, we have studied on cinstructing code-recognition shstem by neural network according to a image process taking the DOT classification code stamped on tire surface.It happened to a few problems that characters distorted in edge by diffused reflection and two adjacent characters take the same label,even very sen- sitive to illumination ofr recognition the stamped them on tire.Thus,this paper would propose the algorithm for tire code under being cinscious of these properties and prove the algorithm drrciency with a simulation.Also,we have suggerted the MCBP network composing of multi-linked recognizers of dffcient identify the DOT code being tire classification code.The MCBP network extracts the projection balue for classifying each character's rdgion after taking out the prjection of each chracter's region on X,Y axis,processes each chracters by taking 7$\times$8 normalization.We have improved error rate 3% through the MCBP network and post-process comparing the DOT code Database. This approach has a accomplished that learming time get's improvenent at 60% and recognition rate has become to 95% from 90% than BckPropagation with including post- processing it has attained greate rates of entire of tire recoggnition at 98%.

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Phenomenological Study on Crystal Phase Separation in InGaN/GaN Multiple Quantum Well Structures (InGaN/GaN 다중 양자우물 구조에서의 결정상 분리 현상 연구)

  • Lee, S.J.;Kim, J.O.;Kim, C.S.;Noh, S.K.;Lim, K.Y.
    • Journal of the Korean Vacuum Society
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    • v.16 no.1
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    • pp.27-32
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    • 2007
  • We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

Novel Purification Method of Kv 4.2 Potassium Channel from Rat Brain Membrane

  • Park, Sung-Soo
    • Biomedical Science Letters
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    • v.18 no.2
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    • pp.96-103
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    • 2012
  • Kv 4.2 ion channel protein has an ability to open at subthreshold membrane potentials and to recover quickly from inactivation. That is very important for neuronal signal transmission in vertebrate brain. In order to purify Kv 4.2 protein, the novel purification methods were experimented. The purification procedure utilized chromatography on DE-52 ion exchange column and affinity chromatography on a WGA-Sepharose 4B, and Kv 4.2 affinity column chromatography. It was found that 0.5% (wt./vol.) Triton X-100 detergent in lysis buffer worked well for Kv 4.2 protein solubilization from rat brain membrane. Protein quantitative determination was conducted by BCA method at 562 nm for each purification step to avoid determination interference of protein at 280 nm by detergent. The confirmation of Kv 4.2 existence and amount is performed using by SDS-PAGE/immunoblotting or 96-well dot blotting. The Kv 4.2 without interacting protein that contains carbohydrate, was purified from novel biochemical 3-steps purification method for further research.

CASK, BUGLE80, BUGLE93을 이용한 원자로 압력용기 중성자 조사량 분포 비교

  • 문복자;이성희
    • Nuclear Engineering and Technology
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    • v.27 no.2
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    • pp.248-259
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    • 1995
  • 고리 3호기 원자로를 대상으로 압력용기에서의 고속중성자 집적량을 계산하였다. 수송계산에는 2차원 각분할 수송코드인 DOT 4.3을 사용하였고 핵단면적 라이브러리는 ENDF /B-II와 ENDF /B-III를 근거로 한 CASK와 ENDF /B-IV를 근거로 한 BUGLE80, 고리고 ENDF /B-Ⅵ를 근거로 한BUGLE93 등이다. 사용한 핵단면적에 따른 압력용기에서의 고속중성자속 분포를 살펴보고 최근에 배포된 BUGLE93 라이브러리의 Dosimeter File을 사용하여 1, 2차 감시시험에서 측정된 중성자 측정시료의 방사능으로부터 계산된 고속중성자속 측정치를 계산된 고속중성자속과 비교하였다. 이 비교를 통하여 압력용기에서의 고속중성자속과 수명기간동안의 고속중성자 집적량을 평가하였다.

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Study on isolation of Prevotella nigrescens 9336- specific DNA probes using random cloning method (무작위 클로닝법을 이용한 Prevotella nigrescens 9336 특이 DNA 프로브의 개발에 관한 연구)

  • Gang, Soon-Won;Kim, Se-Hoon;kim, Dong- Ki;Seong, Jin-Hyo;Kim, Byung-Ock;Kim, Jung- Ki
    • Journal of Periodontal and Implant Science
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    • v.32 no.2
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    • pp.269-280
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    • 2002
  • The purpose of this study is to develop species-specific DNA probes and polymerase chain reaction (PCR) primers for detection and identification of Prevotella nigrescens (P. nigrescens) 9336. This study procedure includes (1) whole-genomic DNA extraction of P. nigrescens 9336 (2) construction of the genomic DNA library, (3) screening of strain-specific DNA probe by reverse Dot Hybridization method, (4) confirmation of strain-specific DNA probe by Southern blot analysis, (5) determination of nucleotide sequences of strain-specific DNA probe. Thirty-five restriction fragments of P. nigrescens 9336 genomic DNA digested with the Hind III were obtained. Reverse dot hybridization and Southern blot analysis data showed that three of them, Pn10, Pn23, and Pn35, could be P. nigrescens 9336-specific DNA probes. These data indicated that these DNA probes could be useful in detection and identification of the P. nigrescens 9336.