• Proceedings of the Acoustical Society of Korea Conference
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• 1994.06a
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• pp.1039-1045
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• 1994

The speech recognition systems using VQ have usually the problem decreasing recognition rate, MSVQ assigning the dissimilar vectors to a segment. In this paper, applying One-stage DMS/DP algorithm to the recognition experiments, we can solve these problems to what degree. Recognition experiment is peformed for Korean DDD area names with DMS model of 20 sections and word unit template. We carried out the experiment in speaker dependent and speaker independent, and get a recognition rates of 97.7% and 81.7% respectively.

• Journal of Microbiology and Biotechnology
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• v.13 no.6
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• pp.866-871
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• 2003

Malodorous gas of dimethyl sulfide (DMS) was biologically oxidized to sulfate by Thiobacillus thioparus TK-m (DSM5368) immobilized in/on ceramic beads. More than 99.99％ of DMS removal efficiency was obtained in a ceramic-biofilter reactor of 3.91 when the feed concentrations were about 27.5 and 55.0 mg DMS/1 at $30^{circ}C$. However, the removal efficiency of the biofilter at above $40^{circ}C$ decreased to 4.5 mg DMS/(lㆍmin) which was 85％ of that at $30^{circ}C$.

• Proceedings of the KAIS Fall Conference
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• 2012.05b
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• pp.471-473
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• 2012

본 논문은 DMS (defected microstrip structure) 선로를 이용한 전력분배기 설계에 대하여 기술하고 있다. DMS 선로는 마이크로스트립 선로의 패턴에 변형을 가하여 설계되는데, 이 때 부가적으로 발생하는 인덕턴스와 커패시턴스 효과에 의하여 선로의 특성 임피던스가 변하고, 또한 종래 주기구조에서의 특징들을 보인다. 이를 이용하면 초고주파 전송선로 구조의 무선회로들을 소형화할 수 있는데, 그 한 예로 본 논문에서는 윌킨슨 전력분배기를 소형화하는 설계에 대하여 기술한다. DMS 구조를 삽입하여 소형화된 전력분배기를 설계한 결과, 소형화된 분배기는 표준형 회로에 비하여 약 82%의 크기를 가지면서도 우수한 성능을 갖는다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1933-1939
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• 1990

In this paper, we proposed an algorithm which used backtracking method to get time information, and it be modelled DMS (Dynamic Multisection) by feature vectors and time information whic are represented to similiar feature in word patterns spoken during continuous time domain, for Korean Speech recognition by independent speaker using DMS. Each state of model is represented time sequence, and have time information and feature vector. Typical feature vector is determined as the feature vector of each state to minimize the distance between word patterns. DDD Area names are selected as recognition wcabulary and 12th LPC cepstrum coefficients are used as the feature parameter. State of model is made 8 multisection and is used 0.2 as weight for time information. Through the experiment result, recognition rate by DMS model is 94.8%, and it is shown that this is better than recognition rate (89.3%) by MSVQ(Multisection Vector Quantization) method.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.52-55
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• 2008

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2004.05a
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• pp.83-84
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• 2004

• The Transactions of the Korea Information Processing Society
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• v.6 no.6
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• pp.1419-1432
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• 1999

The Document Management System(DMS) is a system which retrieves and manages library information efficiently. Since DMS manages the information using only one table, it does not need to provide join and view operations that spend high cost in traditional DBMS. In addition, DMs requires new operations because of their property. the operation has not been supported in existing DBMSs. In this paper we define a data language which represents the structure definition and process of data on the DMS. Especially we define Ranking and Proximity operation which is needed in Document Retrieval,. We also design and implement a query processor to process the query constructed with the data language. When the exiting query processors of relational DBMS are used as a query processor of DMS, they degrade the whole system performance. The proposed query processor not only overcomes such a problem but also supports new operation which is needed in DMS.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.541-542
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.282.1-282.1
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• 2009