• 전자공학회논문지 IE
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• v.47 no.2
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• pp.1-7
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• 2010

This paper presents a low power digital PLL architecture and design for implementation of the PLL-based frequency synthesizers. In the proposed architecture, a wide band digital logic quadricorrelator is used for preliminary frequency detector and a narrow band digital logic quadricorrelator is used for final DCO control. Also, a circuit technique for reducing leakage current is adopted in order to minimize the standby mode power consumption of the deactivated block. The proposed digital PLL is designed and verified by MyCAD with MOSIS 1.8V $0.35{\mu}m$ CMOS technology, and the simulation results show that the power consumption can be lowered by more than 20%.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• v.14 no.2
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• pp.229-237
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• 2003

Objectives：Among the studies related to excessive computer use, the studies for elementary school students are relatively rare. Because children have relatively poor ability to recognize and express themselves, the carers' information is important to assess the children. This study attempted to investigate the relationship between children's computer use and sociopsychiatric characteristics on the basis of carers' reports. Methods：The subjects of this study were 287 5th- and 6th-grade students in the elementary school in Seoul. The student carers were asked to answer the questions for children's computer use, the computer addiction test modified from Young's parent-child internet addiction test, Korean Personality Inventory for Children(K-PIC). SPSS(version 10) was used to analyse the differnece of computer use between genders and the relation of the computer addiction test with K-PIC. Results：1) The score of computer addiction test was significantly higher in male children than in female children and more male children compared to female children were distributed in the excessive user group. 2) The score of computer addiction test correlated with the scores of most clinical scales of K-PIC and the average scores of most clinical scale were significantly higher in the excessive user group than in the general user group. 3) More children with score above 65 in HPR, DLQ, FAM scale were distributed in excessive user group than in general user group. Conclusion：The 5th- and 6th-grade elementary school students with excessive computer use were found to show more sociopsychiatric problems. With these finding we suggest that social and clinical attention to the children who use computer excessively shoud be required.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.