• Title/Summary/Keyword: DLC coating

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Trends of Plasma Coating Technology and Its Application (플라즈마 코팅의 최신 기술동향과 응용)

  • Jeong, Jae-In;Yang, Ji-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.103.1-103.1
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    • 2016
  • 플라즈마 코팅은 진공 및 진공에서 발생된 플라즈마 대기압 플라즈마를 이용하여 기판에 코팅하는 기술을 의미하는 것으로 최근 다양한 코팅 소스 및 물질계가 개발되면서 그 응용을 넓혀가고 있다. 플라즈마 코팅은 물리증착 및 화학증착에서 주로 이용하고 있는데 플라즈마를 이용하는 대표적인 기술로 스퍼터링과 음극아크증착, 플라즈마 화학증착 등이 있다. 스퍼터링은 기존의 마그네트론 스퍼터링에 비해 이온화율이 대폭 향상된 HIPIMS(High Power Impulse Magnetron Sputtering) 기술이 개발되면서 경질피막 제조의 신기술로 자리 잡고 있고 음극아크증착의 경우는 다양한 Filtered 아크소스가 개발되면서 후막 고경도 DLC(Diamond-like Carbon) 등 기존의 방법으로 달성할 수 없었던 코팅층의 제조가 가능하게 되었다. 최근 수명 및 물성이 크게 향상된 소재들이 다양하게 개발되었는데 이들 소재는 가공이 잘 되지 않는 난삭재가 대부분이어서 기존의 가공 Tool이 한계를 드러내고 있다. 이에 따라 난삭재 가공용 새로운 Tool에 대한 수요가 크게 증가하고 있는데 이에 대응하는 유력한 방법 중의 하나가 플라즈마를 이용한 경질코팅이다. 이렇듯 플라즈마 코팅은 난삭재가공용 Tool을 비롯하여 기계나 자동차 부품의 고경도, 저마찰 코팅, 기능성 코팅 등 다양한 분야에 응용을 확대하고 있다. 본 논문에서는 플라즈마 코팅의 최신 기술개발 동향과 그 응용에 대해 고찰하고자 한다.

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Spark Plasma Sintering and Ultra-Precision Machining Characteristics of SiC

  • Son, Hyeon-Taek;Kim, Dae-Guen;Park, Soon-Sub;Lee, Jong-Hyeon
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.559-569
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    • 2010
  • The liquid-phase sintering method was used to prepare a glass lens forming core composed of SiC-$Al_2O_3-Y_2O_3$. Spark plasma sintering was used to obtain dense sintered bodies. The sintering characteristics of different SiC sources and compositions of additives were studied. Results revealed that, owing to its initial larger surface area, $\alpha$-SiC offers sinterability that is superior to that of $\beta$-SiC. A maximum density of $3.32\;g/cm^3$ (theoretical density [TD] of 99.7%) was obtained in $\alpha$-SiC-10 wt% ($6Al_2O_3-4Y_2O_3$) sintered at $1850^{\circ}C$ without high-energy ball milling. The maximum hardness and compression stress of the sintered body reached 2870 Hv and 1110 MPa, respectively. The optimum ultra-precision machining parameters were a grinding speed of 1243 m/min, work spindle rotation rate of 100 rpm, feed rate of 0.5 mm/min, and depth of cut of $0.2\;{\mu}m$. The surface roughnesses of the thus prepared final products were Ra = 4.3 nm and Rt = 55.3 nm for the aspheric lens forming core and Ra = 4.4 nm and Rt = 41.9 for the spherical lens forming core. These values were found to be sufficiently low, and the cores showed good compatibility between SiC and the diamond-like carbon (DLC) coating material. Thus, these glass lens forming cores have great potential for application in the lens industry.

Diamond-Like Carbon Films Deposited by Pulsed Magnetron Sputtering System with Rotating Cathode

  • Chun, Hui-Gon;You, Yong-Zoo;Nikolay S. Sochugov;Sergey V. Rabotkin
    • Journal of the Korean institute of surface engineering
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    • v.36 no.4
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    • pp.296-300
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    • 2003
  • Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.