• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.86-93
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• 1995

Linwidth enhancement factor .alpha., linwidth, chirping and differential gain characteristics were measured and compared for each DFB-LDs containing active layers composed of bulk, MQW, and S-MQW, respectively. .alpha. of 6, 4 and 3.2 and chirping measured under 2.5Gbps modulation of 1.29nm, 0.67nm and 0.48nm were given for DFB-LDs of bulk, MQW and S-MQW active layers, respectively. And S-MQW has the largest differential gin of 2.4*10$^{-15}$ cm$^{2}$ (S-MQW) compared to the of 5.4*10$^{-16}$ cm$^{2}$(bulk) and 8.6*10$^{-16}$ cm$^{2}$(MQW). Linewidth enhancement facter .alpha. of less than 2 is expected with p-type modulation doped S-MQW DFB-LD.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.88-89
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• 2003

현대 시대에 광통신 시스템은 안정적이고 높은 단일 모드를 갖는 광원을 필요로 한다. 이 조건을 만족하는 λ／4 phase shifted DFB는 높은 단일모드 생성을 보였으나 high spatial hole burning문제점을 가지고 있다. λ／4 phase shift를 사용하지 않은 dual-pitch grating DFB가 소개되었지만 제작상의 어려움을 가지고 있다. 또 다른 구조인 selection-free tapered stripe DFB lasers가 제안되었는데 제작이 간단하면서도 높은 단일모드 생성을 보였다. (중략)

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.120-129
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• 1995

A new nethod, namely multi-gain-levering, is proposed to improve FM response of the single frequency semiconductor lasers and applied to 1.55$\mu\textrm{m}$ InGaAsP/InP MGL(multi-gain-levered)-MQW-DFB-LD. This device consists of three sections with different bandgap energy and can be easily realized by selective MOVPE growth. Our analysis based on Green function showed that a flat, red-shifted, high FM efficiency of aove 15GHz/mA can be extected by novel gain-levering scheme.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.454-459
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• 2003

We report the first demonstration of 10 Gb/s wavelength conversion in a Mach-Zehnder interferometric wavelength converter monolithically integrated with a loss-coupled DFB probe source. The integrated device is fabricated using a BRS (buried ridge stripe) structure with an undoped InP clad layer on the top of a passive waveguide to reduce high propagation loss. The device exhibited a static extinction ratio of 11 dB. Good performance at 10 Gb/s is obtained with an extinction ratio of 7 dB and a power penalty of 2.8 dB at a 10$^{-9}$ bit error rate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.12
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• pp.2426-2438
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• 1994

In this paper we present for the first time the electric circuit model for direct frequrncy modulation(FM) response of the conventional distributed-feedback(DFB) semiconductor laser diodes. Especially, in this paper, the proposed model includes not only the carrier density modulation effect, but also the temperature modulation effect determining the DFM characteristics of DFB characteristics of DFB semiconductor lasers. The DFM response due to injection current modulation was obtained as a function of modulation frequency from DC to a few GHz. The circuit model representing the temperature modulation effect is obtained from the structure of DFB LD chip and the simulation results are compared with the published experimental results. The circuit model representing the temperature modulation effect is obtained from the structure of DFB LD chip and the simulation results are compared with the published experimental results. The circuit model representing carrier density modulation effect is obtained from the rate equations of DFB lasers and the simulation results are compared with the results that were obtained by the conventional numerical analysis approach. The results showed good agreements.

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.158-161
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• 2007

We proposed a novel linearization technique for a DFB LD in the RoF link. The proposed scheme is based on the cross gain modulation(XGM) effect of a reflective semiconductor optical amplifier(RSOA) with light injection. We experimentally demonstrated and evaluated the enhanced CIR performance using the proposed linearization scheme.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.100-103
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• 1998

We proposed a simple and yet effective way of wavelength stabilization for WDM transmission using a temperature compensated fiber grating. This scheme was successfully applied to both DFB LD and EMLD, locking them to their respective reference wavelengths notwithstanding temperature change and RF modulation.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.359-364
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• 1995

A wavelength measurement system has been made using a monochromator and computer interfacing. The spectra of several light emitting diodes and the wavelength characteristics of Fabry-Perot LD and DFB LD have been measured with this system. The results show that this system can be practicalIy used in analyzing the lasing mode and the wavelength characteristics of the semiconductor lasers. asers.

• Current Optics and Photonics
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• v.4 no.6
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• pp.461-465
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• 2020

A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.