• ETRI Journal
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• v.45 no.2
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• pp.193-202
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• 2023

We demonstrate the transmission of uncompressed 4K videos over the photonics-based terahertz (THz) wireless link using a directly modulated distributed feedback laser diode (DFB-LD). For optical heterodyne mixing and data modulation, a DFB-LD was employed and directly modulated with a 5.94-Gb/s non-return-to-zero signal, which is related to a 6G-serial digital interface standard to support ultra-high-definition video resolution. We derived the optimal frequency of the THz carrier by varying the wavelength difference between DFB-LD output and Tunable LD output in the THz signal transmitter to obtain the best transmission performances of the uncompressed 4K video signals. Furthermore, we exploited the negative laser-to-filter detuning for the adiabatic chirp management of the DFB-LD by the intentional discrepancy between the center wavelength of the optical band-pass filter and the output wavelength of the DFB-LD. With the help of the abovementioned methods, we successfully transmitted uncompressed 4K video signals over the 2.3-m wireless transmission distance without black frames induced by time synchronization error.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.14-15
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• 2002

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.418-422
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• 1994

본 연구에서는 MOVPE를 이용한 MQW활성층을 DFB-LD 구조에 도입함으로서 2.5Gbps 광전송용 광원으로 사용된 $ 1.55.\mu$m 파장의 MQW-PBH-DFB-LD를 제작하였다. 활성층으로는 MOVPE를 이용하여 8쌍의 InGaAs/InGaAsP MQW층을 성장하였으며 2차 및 3차 결정성장은 LPE를 사용하였고 발진파장을 결정하는 회절격자 주기는 238nm로 하였다. MQW-PBH-DFB-LD의 평균 임계전류는 13.81mA, Slope efficiency는 0.137mW/mA이었고 발진파장은 1548.6nm의 특성을 얻었다. 그리고 2.5Gbps 대신호 변조시의 chirping특성을 조사하여 본 결과 0.55nm임을 확인할 수가 있었다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.5
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• pp.1372-1383
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• 1998

In this paper, modeling for DC and AC characteristics analysis of DFB-LD was performed considering effects of .lambda./4-shifted gratingandspatial hole burning within a laser diode cavity. From the simulation for DC characteristics, Light-Current curve, optical power distribution and carrier density distribution within the cavity can be obtained. The simulation for AC characteristics porovides IM response and the amplitude and phase and the amplitude and phase response of FM with excellent accuracy.

• Journal of Industrial Technology
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• v.16
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• pp.147-155
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• 1996

There is a considerable interest in tunable DFB-LD for their use in OFDM and coherent optical communications. In this paper, A modeling of ${\lambda}/4$-shifted tunable wavelength three electrode DFB-LD was performed considering the spatial hole burning within a laser diode cavity. The modeling will show design paramenters' requirement for high-speed and broad bandwidth lasers. The simulations of modeling prove that the continuous tuning range is about 3nm and the SMSR is about several dB. We showed that the optical power and carrier density distribution along z for several dc current with SHB. It was shown that prove that optical power and carrier density along cavity are changed and thismeans that modeling is correct.

• Journal of Industrial Technology
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• v.15
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• pp.123-135
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• 1995

In this paper, we performed the modeling of a tunable three section DFB-LD with continuous phase using the coupled-wave equation. It was also proposed new modeling method for ${\lambda}/4$ phase shifted one. We got the characteristics of oscillation wavelength, gain, and photon density profiles according to parameters such as coupling coefficient K and current into the third sections for two case of continuous phase and ${\lambda}/4$ shifted phase one. The simulations for ${\lambda}/4$ phase shifted tunable three section DFB-LD prove that the continuous tuning range is about 4.2nm for $K=120cm^{-1}$, $L=180{\mu}m$, and the oscillation mode be within the stop-bands. Also when changed a current of both end sections, it is shown that a photon density reaches the maximum at the center.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.73-80
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• 1995

We fabricated the 1.55.mu.m RWG-DFB-LD and measured its electrical and optical characteristics. Interference fringe of optical beams was used for grating formation and epi layers were grown by lower-temperature LPE. The fabricated RWG-DFB-LD operated in a single longitudinal mode with more than 30dB SMSR at 1543nm emitting wavelength and its threshold current was 40mA. The wavelength shift with operating temperature and characteristic temperature T$_{o}$ were 0.9${\AA}/^{\circ}C$ and 59K, respectively. Linewidth enhancement factor .alpha. and linewidty.optical power product were estimated as 6.15 and 60MHz$\cdot$mW respectively.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.333-336
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• 2007

A Strained Layer Multiquantum-Well (SL-MQW) distributed feedback laser at a wavelength of 1.31 um operating from $-40^{\circ}C$ to $85^{\circ}C$ without any cooling is grown by metal-organic chemical vapor deposition (MOCVD). Lasers with high slope efficiency are achieved through careful optimization of a SL-MQW active layer, especiallyoptimizing the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. In this paper, we obtain the slope efficiencies of 0.38[mW/mA] and 0.26 [mW/mA] at $25^{\circ}C$ and $85^{\circ}C$, respectively. Threshold currents are 7.1[mA] and 19.8[mA] at $25^{\circ}C$ and $85^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.248-251
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• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.