• ETRI Journal
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• 제45권2호
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• pp.193-202
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• 2023

We demonstrate the transmission of uncompressed 4K videos over the photonics-based terahertz (THz) wireless link using a directly modulated distributed feedback laser diode (DFB-LD). For optical heterodyne mixing and data modulation, a DFB-LD was employed and directly modulated with a 5.94-Gb/s non-return-to-zero signal, which is related to a 6G-serial digital interface standard to support ultra-high-definition video resolution. We derived the optimal frequency of the THz carrier by varying the wavelength difference between DFB-LD output and Tunable LD output in the THz signal transmitter to obtain the best transmission performances of the uncompressed 4K video signals. Furthermore, we exploited the negative laser-to-filter detuning for the adiabatic chirp management of the DFB-LD by the intentional discrepancy between the center wavelength of the optical band-pass filter and the output wavelength of the DFB-LD. With the help of the abovementioned methods, we successfully transmitted uncompressed 4K video signals over the 2.3-m wireless transmission distance without black frames induced by time synchronization error.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.14-15
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• 2002

• 한국광학회지
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• 제5권3호
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• pp.418-422
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• 1994

본 연구에서는 MOVPE를 이용한 MQW활성층을 DFB-LD 구조에 도입함으로서 2.5Gbps 광전송용 광원으로 사용된 $ 1.55.\mu$m 파장의 MQW-PBH-DFB-LD를 제작하였다. 활성층으로는 MOVPE를 이용하여 8쌍의 InGaAs/InGaAsP MQW층을 성장하였으며 2차 및 3차 결정성장은 LPE를 사용하였고 발진파장을 결정하는 회절격자 주기는 238nm로 하였다. MQW-PBH-DFB-LD의 평균 임계전류는 13.81mA, Slope efficiency는 0.137mW/mA이었고 발진파장은 1548.6nm의 특성을 얻었다. 그리고 2.5Gbps 대신호 변조시의 chirping특성을 조사하여 본 결과 0.55nm임을 확인할 수가 있었다.

• 한국통신학회논문지
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• 제23권5호
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• pp.1372-1383
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• 1998

본 논문에서 수행된 DFB(distributed feedback)-LD(laser diode)의 DC와 AC 특성 분석을 위한 모델링은 레이저 다이오드 공진기 내의 spatial hole burning과 $\lambda$/4 위상천이 된 회절 격자의 영향을 고려한 것으로서 DC특성 분석을 위한 시뮬레이션을 통하여 공진기내의 광파워 분포와 캐리어 밀도 분포 그리고 광-전류 곡선등을 얻었으며, AC 특성 분석을 위한 시뮬레이션으로부터는 비교적 정확한 IM 응답과 FM의 위상과 크기 응답을 얻었다.

• 산업기술연구
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• 제16권
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• pp.147-155
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• 1996

There is a considerable interest in tunable DFB-LD for their use in OFDM and coherent optical communications. In this paper, A modeling of ${\lambda}/4$-shifted tunable wavelength three electrode DFB-LD was performed considering the spatial hole burning within a laser diode cavity. The modeling will show design paramenters' requirement for high-speed and broad bandwidth lasers. The simulations of modeling prove that the continuous tuning range is about 3nm and the SMSR is about several dB. We showed that the optical power and carrier density distribution along z for several dc current with SHB. It was shown that prove that optical power and carrier density along cavity are changed and thismeans that modeling is correct.

• 산업기술연구
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• 제15권
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• pp.123-135
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• 1995

In this paper, we performed the modeling of a tunable three section DFB-LD with continuous phase using the coupled-wave equation. It was also proposed new modeling method for ${\lambda}/4$ phase shifted one. We got the characteristics of oscillation wavelength, gain, and photon density profiles according to parameters such as coupling coefficient K and current into the third sections for two case of continuous phase and ${\lambda}/4$ shifted phase one. The simulations for ${\lambda}/4$ phase shifted tunable three section DFB-LD prove that the continuous tuning range is about 4.2nm for $K=120cm^{-1}$, $L=180{\mu}m$, and the oscillation mode be within the stop-bands. Also when changed a current of both end sections, it is shown that a photon density reaches the maximum at the center.

• 전자공학회논문지D
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• 제34D권3호
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• 전자공학회논문지A
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• 제32A권2호
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• pp.73-80
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• 1995

We fabricated the 1.55.mu.m RWG-DFB-LD and measured its electrical and optical characteristics. Interference fringe of optical beams was used for grating formation and epi layers were grown by lower-temperature LPE. The fabricated RWG-DFB-LD operated in a single longitudinal mode with more than 30dB SMSR at 1543nm emitting wavelength and its threshold current was 40mA. The wavelength shift with operating temperature and characteristic temperature T$_{o}$ were 0.9${\AA}/^{\circ}C$ and 59K, respectively. Linewidth enhancement factor .alpha. and linewidty.optical power product were estimated as 6.15 and 60MHz$\cdot$mW respectively.

• 한국광학회지
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• 제18권5호
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• pp.333-336
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• 2007

[ $-40^{\circ}C$ ]에서 $85^{\circ}C$의 온도에서 냉각장치 없이 동작하는 1.31 um 비냉각 DFB-LD가 유기 금속 화학 증착법에 의해 성장되었다. 높은 전광변환효율을 갖는 레이저의 제작은 스트레인이 인가된 다중양자우물 구조의 최적화를 통해 가능하며, 특히 스트레인의 양, 양자 우물의 두께, 전위장벽의 두께, 양자 우물의 수, 활성층의 폭에 주로 영향을 받는다. 본 연구에서 제작된 DFB-LD는 $25^{\circ}C$와 $85^{\circ}C$에서 전광변환효율은 0.38[mW/mA]와 0.26[mW/mA], 발진개시전류는 각각 7.1[mA]와 19.8[mA]의 값을 가졌다.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.248-251
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• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.