• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.82-85
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.159-160
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• 2006

$AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.381-384
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• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.263-266
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• 2004

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.96-97
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• 2008

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.136-137
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• 2006

The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.137-146
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• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).