• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1075-1080
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• 2015

A hybrid electric vehicle (HEV) powertrain has more than one energy source including a high-voltage electric battery. However, for a high voltage electric battery, the average current is relatively low for a given power level. Introduced to increase the voltage of a HEV battery, a compact, high-efficiency boost converter, sometimes called a step-up converter, is a dc-dc converter with an output voltage greater than its input voltage. The inductor occupies more than 30% of the total converter volume making it difficult to get high power density. The inductor should have the characteristics of good thermal stability, low weight, low losses and low EMI. In this paper, Mega Flux^® was selected as the core material among potential core candidates. Different structured inductors with Mega Flux^® were fabricated to compare the performance between the conventional air cooled and proposed potting structure. The proposed inductor has reduced the weight by 75% from 8.8kg to 2.18kg and the power density was increased from 15.6W/cc to 56.4W/cc compared with conventional inductor. To optimize the performance of proposed inductor, the potting materials with various thermal conductivities were investigated. Silicone with alumina was chosen as potting materials due to the high thermo-stable properties. The proposed inductors used potting material with thermal conductivities of 0.7W/m·K, 1.0W/m·K and 1.6W/m·K to analyze the thermal performance. Simulations of the proposed inductor were fulfilled in terms of magnetic flux saturation, leakage flux and temperature rise. The temperature rise and power efficiency were measured with the 40kW boost converter. Experimental results show that the proposed inductor reached the temperature saturation of 107℃ in 20 minutes. On the other hand, the temperature of conventional inductor rose by 138℃ without saturation. And the effect of thermal conductivity was verified as the highest thermal conductivity of potting materials leads to the lowest temperature saturations.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.359-362
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• 2016

In the PV (Photovoltaic) power system, a junction box collects the DC voltage generated from the PV module and transfers it to the PCS (power conditioning system). The junction box prevents damage caused by the voltage difference between the serially connected PV modules and provides convenience while repairing or inspecting the PV array. In addition, the junction box uses the diode to protect modules from the inverse current when the PV power system and electric power system are connected for use. However, by using the reverse blocking diode, heat is generated within the junction box while generating electric power, which decreases the generating efficiency, and causes short circuit and electric leakage. In this research, based on the purpose of improving the performance of the PV module by decreasing the heat generation within the junction box, a junction box with a built-in bypass circuit was designed/manufactured so that a certain capacity of current generated from the PV module does not run through the reverse blocking diode. The manufactured junction box was used to compare the electric power and heating power generated when the circuit was in the bypass/non-bypass modes. It was confirmed that the electric power loss and heat generation indicated a decrease when the circuit was in the bypass mode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.50-56
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• 2005

The electrical properties, clamping voltage characteristics, and stability of dysprosia-doped ZnO-P $r_{6}$ $O_{11}$-based varistors were investigated with different dysprosia contents from 0 to 2.0 mol%. The incorporation of dysprosia in varistor ceramics greatly increased the varistor voltage from 50 to 481.0 V/mm. It was found that the dysprosia is good additive improving a nonlinearity, in which the nonlinear exponent is above or near 50, and the leakage current is below 1.0 $\mu$A. The dysprosia-doped varistors exhibited superior clamping voltage characetristics, in which clamping voltage ratio is above or neat 2 at surge current of 50 A. The 0.5 mol% dysprosia-doped varistors only exhibited high stability, with the rate of varistor voltage of -0.9%, under DC acceleraetd aging stress, 0.95 $V_{lmA}$/15$0^{\circ}C$/24 h.h.h.h.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.4
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• pp.297-304
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• 2015

A conventional single-phase high-power system typically generates a large AC line input current at universal 90 VAC condition. Sometimes, this phenomenon can block the Earth Leakage Circuit Breaker (ELCB), which causes problems. Replacing power facilities is essential to ensure smooth operations. Thus, this paper proposes a method that can drive higher power than the limit of conventional power facilities. The proposed method can reduce the large AC line input current by limiting the input power of Power Factor Correction (PFC). An additional battery circuit can supplement the power deficiency. Specifically, a bidirectional converter with charging and discharging functions was adopted for the battery circuit. Finally, the validity of the proposed system could be confirmed by modal analysis and simulation, and an experiment in 2 KW condition was implemented with a prototype sample as well.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.5
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• pp.413-420
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• 2004

In this paper, the control algorithm of DC source device for inverter starting is proposed and the control method for compensating unbalance system source on operating time in the voltage type PWM converter with driving and regenerative faculty is suggested. The maintaining method of balancing condition for converter of AC source is used the compensating unbalanced status by current control loop. In order to solve the problem which the unbalanced system control is used to leakage transformer not equaled reactance by each phase in rectifier system. The proposed H/W and control algorithm of rectifier system is contributed to minimize of device and rising efficiency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.4
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• pp.381-388
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• 2015

In this paper, a wireless video streaming system is designed and implemented for TV white space applications. It consists of a RF transceiver module, a digital modem, a camera, and a LCD screen. A VGA resolution video is captured by a camera, modulated by modem, and transmitted by RF transceiver module, and finally displayed at a destination 2.6-inch LCD screen. The RF transceiver is based on direct-conversion architecture. Image leakage is improved by low pass filtering LO, which successfully covers the TVWS. Also, DC offset problem is solved by current steering techniques which control common mode level at DAC output node. The output power of the transmitter and the minimum sensitivity of the receiver is +10 dBm and -82 dBm, respectively. The channel bandwidth is tunable among 6, 7 and 8 MHz according to regulations and standards. Digital modem is realized in Kintex-7 FPGA. Data rate is 9 Mbps based on QPSK and 512ch OFDM. A VGA video is successfully streamed through the air by using the developed TV white-space RF communication module.

• Journal of the Korea Society of Computer and Information
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• v.8 no.4
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• pp.75-80
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• 2003

In this paper, we designed add current scan system basically. Although NDT system using AC method in now days had problem with limit of detection rate and limit of device organization, in this paper, we made up these problem so that designed device smaller than system used, reduction of cost of system organization and precision of measuring crack. Also, AC leakage flux system had high accuracy about minute crack in the surface and advantage of designing system easily so that we designed system for concerning about crack of surface. Furthermore, it can be able to detect exact crack of reference in wide area by using DSP320C31 chip to reduce the time of measuring crack.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.34-37
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• 1992

In this paper, the $(SrPb)(CaMg)TiO_3$-xBi_2O_3{\cdot}3TiO_2$ ceramics with paraelectric properties were fabricated by the mixed oxide method. In order to investigate the behavior of charged particles, the characteristics of electrical conduction and thermally stimulated current were measured respectively. As a result on characteristics of the electrical conduction, the leakage current was increased as measuring temperature was increased. At room temperature, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to spare charge which injected from electrode, above 40[kV/cm]. Thermally stimulated currents(TSC) spectra with various biasing fields exhibited three distinguished peaks that were denoted as ${\alpha}$, ${\alpha}'$ and ${\beta}$ peak, each of which appeared at nearby -30, 20 and 95[$^{\circ}C$] respectively. It is confirmed that the a peak was due to trap electron trapped in the grainboundary, and ${\alpha}'$ peak that was observed above only 1.5[kV/mm] was attributed to field-enforced ferroelectric polarization. The origin of ${\beta}$ peak was identified as ion migration which caused the degradation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1A
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• pp.80-86
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• 2010

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.341-345
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• 2000

We investigated the microstructures and the electrical properties of $ZrO_2$thin films deposited by reactive DC magnetron sputtering on (100) Si with different deposition conditions and annealing treatments. The refractive index of the $ZrO_2$ thin films increased with annealing temperatures and deposition powers, and approached to the ideal value of 2.0~2.2. The $ZrO_2$thin films deposited at the room temperature are amorphous, and the films are polycrystalline at the deposition temperature of $300^{\circ}C$. Both the thickness of the interfacial oxide layer and the root-mean-square (RMS) value of surface roughness increased upon annealing in the oxygen ambient. The Cmax value and leakage current value decreased with the increase of thickness of the interfacial oxide thickness.