• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.29-34
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• 2005

The degradation of the SiGe hetero-junction bipolar transistor(HBT) properties in SiGe BiCMOS process was investigated in this paper. The SiGe HBT prepaired by SiGe BiCMOS process, unlike the conventional one, showed the degraded DC characteristics such as the decreased Early voltage, the decreased collector-emitter breakdown voltage, and the highly increased base leakage current. Also, the cutoff frequency(f/sub T/) and the maximum oscillation frequency(f/sub max/) representing the AC characteristics are reduced to below 50%. These deteriorations are originated from the change of the locations of emitter-base and collector-base junctions, which is induced by the variation of the doping profile of boron in the SiGe base due to the high-temperature source-drain annealing. In the result, the junctions pushed out of SiGe region caused the parastic barrier formation and the current gain decrease on the SiGe HBT device.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.152-159
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• 2004

In this study, we design the one-chip PWM IC with high voltage power switch (300V class LDMOSFET) for SMPS (Switching Mode Power Supply) application. Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain $({\simeq}65dB)$, unity frequency $({\simeq}190kHz)$ and large $PM(75^{\circ})$. comparator is designed with 2 stage. Saw tooth generators operate with 20kHz oscillation frequency. Also, we optimize drift concentration & drift length of n-LDMOSFET for design of high voltage switching device. It is shown that simulation results have the breakdown voltage of 350V. (using ISE-TCAD Simulation tool). PWM IC with power switching device is designed with 2um design rule and Bi-DMOS technology.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.262-267
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• 2006

We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.551-555
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• 1999

The deposition condition to obtain stoichiometric $Ta_2$O\ulcorner films, which is still controversial, using magnetron reactive sputtering was studied. The films were deposited by varying $O_2$gas flow rate with sputtering power and Ar gas flow rate of 200W and 60 sccm fixed. At the conditions of $O_2$ gas flow rate over 20 sccm, amorphous Tantalum oxide films with the refractive index of 2.1 and dielectric constant of 25 were deposited. Among those films, the capacitors dielectric properties of the film deposited at the condition of $O_2$ gas flow rate 50 sccm was best, the leakage current was 1$\times$10\ulcornerA/$\textrm{cm}^2$ at the electric field strength of 0.5 MC/cm and the breakdown field strength was over 2.0 MV/cm. This result could be explained from the analysis comparing with a standard sample using RBS because the composition of the film deposited at this condition was closest to the stoichiometric $Ta_2$O\ulcorner. The result of XPS analysis convinced that this film was stoichiometric $Ta_2$O\ulcorner film. A maximum cathode voltage was observed when $O_2$gas flow rate was 30 sccm. This shows that the Schiller's proposition that one can obtain stoichiometric films at the condition of maximum cathode voltage is not correct and more oxygen than that of the maximum voltage condition is necessary to deposit the stoichiometric Ta$_2$O\ulcorner films.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.227-230
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• 2001

This paper divides the factors of an accident into two parts, that are electrical deterioration and thermal deterioration, to analyze a characteristic of the factor of an accident which can break out in the capacitor of metal vaporized polypropylene film. For the purpose of creating capacitor which is caused by electric deterioration, we applied DC overvoltage, induced self-healing and breakdown from element. We applied gradual heat to get an element which is cause by thermal deterioration. The chemical structure of the shape and surface is analyzed by thermogravimetric analyzer (TGA), Scanning Electron Microscope (SEM) and Fourier Transform Infrared Spectrometer(FT-IR). As a result, the peak of methylene group came out, in case of electrical deterioration, as observing the self-healing point. However, the peak is disappeared in the heat treated element by 500[$^{\circ}C$], and the peak of carbonyl group which has C=O came out in case of thermal deterioration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1780-1785
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• 2016

This paper presents few case studies of state diagnosis of XLPE cables using very low frequency techniques. The power cables of 22.9kV which have installation fault were assessed using VLF technique in addition to other techniques like insulation resistance and DC voltage withstand test. From the experimental results, The dielectric loss($tan{\delta}$) values of degradation of the cable(joint, knife, needle) at $U_0$ were 5.839, 5.526 and 6.251, respectively and all values were "further study advised". VLF PD measurement was also found defective portion. These method was effective in defect to fault in the degradation of the cable. However, the breakdown did not occur in the degradation of the cable because of properties of XLPE insulation. Few case studies of using VLF $tan{\delta}$ diagnosis for fault are measured and analyzed. The $tan{\delta}$ values at $U_0$ were "further study advised" or "action required".

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1759-1764
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• 2015

Glow corona is a kind of streamer-free corona that can suppress upward leaders in transmission lines. Thus, it has good application potential in lightning protection. This paper investigates its corona characteristics. The suppression characteristic of glow corona on streamer is studied in air gap under negative DC voltage by wrapping thin wires on the electrode. The effect of thin wire winding patterns on the gap breakdown voltage is analyzed. Results are considered to be attributed to the inception condition of glow corona. Thus an inception test of glow corona is also conducted, and the inception voltage is obtained. Results show that the inception voltage decreases with short winding pitch. Thus an investigation on the inception of glow corona influenced by thin wire is conducted, and an influential factor is proposed to evaluate the influence. The inception regular of thin wire glow corona presented in this paper has certain reference value for the application of glow corona in transmission lines.

• Journal of international Conference on Electrical Machines and Systems
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• v.3 no.3
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• pp.241-247
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• 2014

The voltage source PWM inverter generally used to drive the air conditioning (A/C) fans has been posing a large issue that the bearings in air conditioning fan motors are highly possible to be corroded electrically. Potential difference called shaft voltage is generated between inner and outer rings of the bearings due to inverter switching. The shaft voltage causes bearing lubricant breakdown dielectrically. As a result, bearing current is caused. This current causes the bearing corrosion. In previous work, we demonstrated that the shaft voltage can be reduced by using an insulator inserted between the outer and inner cores of the rotor in an air conditioning fan motor without grounding. This paper proposes the other countermeasure for reducing the shaft voltage in fan motors. The countermeasure which adds a capacitor between the brackets and the stator core is effective even for fan motors with non-insulated rotor. The effectiveness is confirmed by both simulated and experimental results.