• Journal of Communications and Networks
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• 제14권5호
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• pp.540-545
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• 2012

In this paper, the lagged cross-correlation of two probability density functions constructed by kernel density estimation is proposed, and by maximizing the proposed function, adaptive filtering algorithms for supervised and unsupervised training are also introduced. From the results of simulation for blind equalization applications in multipath channels with impulsive and slowly varying direct current (DC) bias noise, it is observed that Gaussian kernel of the proposed algorithm cuts out the large errors due to impulsive noise, and the output affected by the DC bias noise can be effectively controlled by the lag ${\tau}$ intrinsically embedded in the proposed function.

• 한국전자파학회논문지
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• 제22권7호
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• pp.683-693
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• 2011

본 논문에서는 고출력 증폭기의 바이어스를 위한 대전류 마이크로파 광대역 바이어스-티의 설계를 보였다. DC 블록용 커패시터는 큰 어드미턴스를 가지도록 커패시터의 병렬합을 이용하고, DC 공급 및 RF 초크용 인덕터는 광대역의 큰 임피던스를 가지는 인덕터의 직렬합을 이용하여 설계하였다. DC 블록이나 RF 초크에 사용되는 인덕터나 커패시터는 자기 공진 주파수(SRF: Self Resonance Frequency)를 가지고 있어 사용 대역이 제약된다. 이를 해결하기 위해 RF 초크에서는 저항을 추가하여 공진 주파수에서 품질 계수를 조정함으로써 해결하였다. 그리고 DC 블록에서는 별도의 품질 계수 조정없이 병렬합만으로 가능하였다. 이 결과를 이용하여 1608 칩 형태의 집중 소자들을 표면 실장 기법(surface mount)으로 PCB 패턴에 조립하여 바이어스-티를 제작하였다. 제작된 바이어스-티는 10 MHz~10 GHz에서 측정된 반사 손실이 10 dB 이하를 가지며, 입력 임피던스는 광대역에서 50 ohm 근처의 값을 만족하는 것을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.781-789
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• 2018

This paper proposes a new approach utilizing empirical mode decomposition (EMD) reconstruction to process vibration signals of a transformer under DC bias caused by high voltage direction transmission (HVDC), which is the potential cause of additional vibration and noise from transformer. Firstly, the Calculation Method is presented and a 3D model of transformer is simulated to analyze transformer deformation characteristic and the result indicate the main vibration is produced along axial direction of three core limbs. Vibration test system has been built and test points on the core and shell of transformer have been measured. Then, the signal reconstruction method for transformer vibration based on EMD is proposed. Through the EMD decomposition, the corrupted noise can be selectively reconstructed by the certain frequency IMFs and better vibration signals of transformer have been obtained. After EMD reconstruction, the vibrations are compared between transformer in normal work and with DC bias. When DC bias occurs, odd harmonics, vibration of core and shell, behave as a nonlinear increase and the even harmonics keep unchanged with DC current. Experiment results are provided to collaborate our theoretical analysis and to illustrate the effectiveness of the proposed EMD method.

• 한국초전도ㆍ저온공학회논문지
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• 제19권1호
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• pp.26-29
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• 2017

We studied the distribution of the current density and its magnetic-field dependence in GdBCO coated conductors with AC bias currents using low temperature scanning Hall probe microscopy. We selectively measured magnetic field profiles from AC signal obtained by Lock-in technique and calculated current distributions by inversion calculation. In order to confirm the AC measurement results, we applied DC current corresponding to RMS value of AC current and compared distribution of AC and DC transport current. We carried out the same measurements at various external DC magnetic fields, and investigated field dependence of AC current distribution. We notice that the AC current distribution unaffected by external magnetic fields and preserved their own path on the contrary to DC current.

• Journal of Power Electronics
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• 제16권3호
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• pp.960-969
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• 2016

High-power three-level voltage-source converters are widely utilized in high-performance AC drive systems. In several ultra-power instances, the harmonics on the grid side should be reduced through multiple rectifications. A combined harmonic elimination method that includes a dual primary-side series-connected winding transformer and selective harmonic elimination pulse-width modulation is proposed to eliminate low-order current harmonics on the primary and secondary sides of transformers. Through an analysis of the harmonic influence caused by dead time and DC magnetic bias, a synthetic compensation control strategy is presented to minimize the grid-side harmonics in the dual primary side series-connected winding transformer application. Both simulation and experimental results demonstrate that the proposed control strategy can significantly reduce the converter input current harmonics and eliminates the DC magnetic bias in the transformer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1739-1741
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• 2000

DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.

• 한국표면공학회지
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• 제43권3호
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• pp.154-158
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• 2010

Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.44-48
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• 1999

In order to the investigate for the DC(forward-reverse) breakdown properties of gate oxide in MOSFET, we are manufactured the specimen as following. The resistivity is 1.2($\Omega$ $.$ cm), 1.5($\Omega$ $.$ cm) and 1.8($\Omega$ $.$ cm) when thickness is 600(${\AA}$), and the diffusion time is both 110[min] and 150[min] when thickness is 600[${\AA}$]. In DC dielectric strength due to the each resistivity, it is confirmed that almost of the leakage current and breakdown current is flowed through n+ source when positive bias is applied, but is flowed through P region when negative bias is applied. It is thought that the dielectric strength due to the diffusion time is the contribution as increasing of p region.

• 조명전기설비학회논문지
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• 제29권4호
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.37-37
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• 2008

Hydrogenated nanocrystalline Si (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a radio frequency power of 100 W, while substrates were exposed to direct current (DC) biases in the range from 0 to -400 V. The effects of the DC bias on the formation of nanoscale Si crystallites in the films and on their optical characteristics were investigated. The size of the Si crystallites in the films ranges from ~ 1.9 to ~ 4.1 nm. The relative fraction of the crystallites in the films reached up ~ 56.5 % when the DC bias of -400 V was applied. Based on the variation in the structural, chemical, and optical features of the films with DC bias voltages, a model for the formation of nanostructures of the nc-Si:H films prepared by PECVD was suggested. This model can be utilized to understand the evolution in the size and relative fraction of the nanocrystallites as well as the amorphous matrix in the nc-Si:H films.