• 제목/요약/키워드: DBD process

검색결과 48건 처리시간 0.023초

양액재배 시스템에서 유전체장벽방전 플라즈마를 이용한 시들음병균(Fusarium oxysporum f. sp. radicis lycopersici)의 불활성화 (Inactivation of Wilt Germs (Fusarium oxysporum f. sp. radicis lycopersici) using Dielectric Barrier Discharge Plasma in Hydroponic Cultivation System)

  • 박영식
    • 한국환경과학회지
    • /
    • 제28권5호
    • /
    • pp.495-502
    • /
    • 2019
  • This study was conducted to investigated the possibility of inactivating wilt germs (Fusarium oxysporum f. sp. radicis lycopersici) using Dielectric Barrier Discharge (DBD) plasma in a hydroponic system. Recirculating hydroponic cultivation system for inactivation was consisted of planting port, LED lamp, water tank, and circulating pump for hydroponic and DBD plasma reactor. Two experiments were conducted: batch and intermittent continuous process. The effect of plasma treatment on Total Residual Oxidants (TRO) concentration change, Fusarium inactivation and growth of lettuce were investigated. In the batch experiment, most of the Fusarium was inactivated at a TRO concentration of 0.15 mg/L or more at four-day intervals. There was no change in lettuce growth after two times of plasma treatment for one week. The intermittent continuous experiment consisted of 30-minute, 60-minute, and 90-minute plasma treatment in 2 day intervals and 30-minute treatment a one-day; most of the Fusarium was inactivated only by treatment for 30-minute every two days. However, if inactivation under $10^1CFU/mL$ is required, it will be necessary to treat for 60 minutes in 2 day intervals. The plasma treatment caused no damage to the lettuce, except the 30 min plasma treatment ay the one-day interval. It was considered that the residual TRO concentration was higher than that of the other treatments.

대기압 플라즈마 설비 개발 및 Flip Chip BGA 제조공정 적용 (Development of Atmospheric Pressure Plasma Equipment and It's Application to Flip Chip BGA Manufacturing Process)

  • 이기석;유선중
    • 반도체디스플레이기술학회지
    • /
    • 제8권2호
    • /
    • pp.15-21
    • /
    • 2009
  • Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.

  • PDF

DBD와 흡착공정을 조합한 2단형 반응기에서 톨루엔 분해에 관한 연구 (Decomposition of Toluene using a 2 Stage Reactor Composed of Dielectric Barrier Discharge and Adsorption Process)

  • 김관태;이웅재;한소영;한의주;최연석;송영훈;김석준
    • 한국대기환경학회:학술대회논문집
    • /
    • 한국대기환경학회 2000년도 추계학술대회 논문집
    • /
    • pp.415-416
    • /
    • 2000
  • 플라즈마 화학공정을 이용한 유해대기오염물질(HAP$_{s}$ 또는 VOC$_{s}$ ) 처리기술은 기존의 촉매연소, 소각 및 흡착기술등에 비하여 낮은 초기 투자비, 여러가스의 동시처리, 소형화 또는 이동 배출원에 대한 적용이 가능하며, 대상가스의 종류나 발생량등에 따라 여러 전원(AC, Pulse, DC)을 이용한 기술개발이 가능하여 많은 연구가 진행되고 있다.$^{(1-4)}$ (중략)

  • PDF

헬륨 대기압 유전체 격벽 방전기의 타운젠트-글로우 방전 모드 전이 연구 (Observation of Discharge Mode Transient from Townsend to Glow at Breakdown of Helium Atmospheric Pressure Dielectric Barrier Discharge)

  • 배병준;김남균;윤성영;신준섭;김곤호
    • 반도체디스플레이기술학회지
    • /
    • 제15권2호
    • /
    • pp.26-31
    • /
    • 2016
  • The Townsend to glow discharge mode transition was investigated in the dielectric barrier discharge (DBD) helium plasma source which was powered by 20 kHz / $4.5 kV_{rms}$ high voltage at atmospheric pressure. The spatial profile of the electric field strength at each modes was measured by using the intensity ratio method of two helium emission lines (667.8 nm ($3^1D{\rightarrow}2^1P$) and 728.1 nm ($3^1S{\rightarrow}2^1P$)) and the Stark effect. ICCD images were analyzed with consideration for the electric field property. The Townsend discharge (TD) mode at the initial stage of breakdown has the light emission region located in the vicinity of the anode. The electric field of the light emitting region is close to the applied field in the system. Immediately, the light emitting region moves to the cathode and the discharge transits to the glow discharge (GD) mode. This mode transition can be understood with the ionization wave propagation. The electric field of the emitting region of GD near cathode is higher than that of TD near anode because of the cathode fall formation. This observation may apply to designing a DBD process system and to analysis of the process treatment results.

뷰테인 건식 개질 반응을 위한 Ni/γ-Al2O3 촉매를 이용한 촉매 공정과 촉매+플라즈마 공정 비교 (Comparison of Dry Reforming of Butane in Catalyst Process and Catalyst+Plasma Process over Ni/γ-Al2O3 Catalyst)

  • 조진오;좌은진;목영선
    • 한국가스학회지
    • /
    • 제22권1호
    • /
    • pp.26-36
    • /
    • 2018
  • 기존 건식 개질 반응에 사용되는 니켈 기반 촉매 공정은 활성화 온도가 높고, 촉매 표면의 활성점에 탄소 침착 및 금속 소결 현상 등의 문제점이 있다. 이에 본 연구에서는 촉매공정에 DBD 플라즈마 공정이 결합된 촉매+플라즈마 공정을 이용하여 뷰테인 건식 개질 반응 특성을 조사하고 기존 촉매 공정과 비교 분석하였다. 촉매의 특성을 파악하기 위해 비표면적 분석기, XRD, SEM 및 TEM 등을 사용하여 물리 화학적 특성을 조사 하였다. $580^{\circ}C$에서 $10%Ni/{\gamma}-Al_2O_3$촉매를 사용한 경우 촉매+플라즈마 공정의 경우 촉매 단독 공정에 비해 이산화탄소와 뷰테인 전환율이 각각 27%, 39%향상되었다. 촉매+플라즈마 공정의 경우 플라즈마에 의해 생성된 다양한 활성종의 영향으로 이산화탄소와 뷰테인 전환율 및 생성되는 수소 농도가 증가하였으며, 뷰테인 건식 개질 반응 과정에서 플라즈마에 의해 니켈 촉매의 크기가 감소하고 분산도가 증가하여 반응 효율이 향상되는 것으로 판단되었다.

고급산화공정용 유전체 장벽 플라즈마 반응기의 성능 개선 (Performance Improvement of Dielectric Barrier Plasma Reactor for Advanced Oxidation Process)

  • 김동석;박영식
    • 대한환경공학회지
    • /
    • 제34권7호
    • /
    • pp.459-466
    • /
    • 2012
  • 유전체 장벽 방전(Dielectric Barrier Discharge; DBD) 플라즈마의 처리 성능을 개선시키기 위하여, 플라즈마+ UV 공정과 기-액 혼합기의 적용에 대해 연구하였다. 처리 대상물질로는 표백효과에 의해 육안으로 쉽게 확인이 가능하고 분석이 간편한 OH 라디칼 생성의 간접 지표인 N, N-Dimethyl-4-nitrosoaniline (RNO)이었다. 기본 플라즈마 반응기는 플라즈마 반응기 [석영관 유전체, 티타늄 방전(내부) 전극, 및 접지(외부) 전극], 공기와 전원 공급장치로 구성되어 있다. 플라즈마 반응기의 개선은 기본 플라즈마 반응기에 UV 공정과의 결합, 기-액 혼합기의 적용에 의해 이루어 졌다. 플라즈마+ UV 공정의 UV 전력 변화(0~10 W), 기-액 혼합기의 존재 유무와 형태, 공기 유량(1~6 L/min), 산기관 기공 크기 범위(16~$160{\mu}m$), 액체 순환 유량(2.8~9.4 L/min) 및 개선된 플라즈마+ UV 공정에서 UV 전력의 영향 등이 평가되었다. 실험 결과 플라즈마+ UV 공정은 기본 플라즈마 반응기보다 RNO 처리율이 7.36% 높아진 것으로 나타났다. 기-액 혼합기의 적용이 플라즈마+ UV 공정보다 RNO 처리율이 더 높은 것으로 나타났고, 기-액 혼합법에 따른 RNO 분해는 기-액 혼합기 > 펌프 순환 > 기본 반응기의 순으로 나타났다. 산기관 형 기-액 혼합기에 의한 RNO 처리율 증가는 17.42%로 나타났다. 최적 공기 유량, 산기관 기포 크기 범위 및 순환 유량은 각각 4 L/min, 40~$100{\mu}m$와 6.9 L/min으로 나타났다. 기-액 혼합기 플라즈마+ UV공정의 경합으로 인한 시너지 효과는 미미한 것으로 나타났다.

개선된 플라즈마 공정을 이용한 Ralstonia Solanacearum 불활성화에 관한 연구 (A Study on the Ralstonia Solanacearum Inactivation using Improved Plasma Process)

  • 김동석;박영식
    • 한국환경과학회지
    • /
    • 제23권3호
    • /
    • pp.369-378
    • /
    • 2014
  • Effect of improvement of the dielectric barrier discharge (DBD) plasma system on the inactivation performance of bacteria were investigated. The improvement of plasma reactor was performed by combination with the basic plasma reactor and UV process or combination with the basic plasma reactor and circulation system which was equipped with gas-liquid mixer. Experimental results showed that tailing effect was appeared after the exponential decrease in basic plasma reactor. There was no enhancement effect on the Ralstonia Solanacearum inactivation with combination of basic plasma process and UV process. The application of gas-liquid mixing device on the basic plasma reactor reduced inactivation time and led to complete sterilization. The effect existence of gas-liquid mixing device, voltage, air flow rate (1 ~ 5 L/min), water circulation rate (2.8 ~ 9.4 L/min) in gas-liquid mixing plasma, plasma voltage and UV power of gas-liquid mixing plasma+UV process were evaluated. The optimum air flow rate, water circulation rate, voltage of gas-liquid mixing system were 3 L/min, 3.5 L/min and 60 V, respectively. There was no enhancement effect on the Ralstonia Solanacearum inactivation with combination of gas-liquid mixing plasma and UV process.

Dry Etch Process Development for TFT-LCD Fabrication Using an Atmospheric Dielectric Barrier Discharge

  • Choi, Shin-Il;Kim, Sang-Gab;Choi, Seung-Ha;Kim, Shi-Yul;Kim, Sang-Soo;Lee, Seung-Hun;Kwon, Ho-Cheol;Kim, Gon-Ho
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.1272-1275
    • /
    • 2008
  • We present the development of dry etch process for the liquid crystal display (LCD) fabrication using a dielectric barrier discharge (DBD) system at atmospheric pressure. In this experimental work, the dry etch characteristics and the electrical properties of thin film transistor are evaluated by using the scanning electron microscopy and electric probe, and TFT-LCD panel ($300\;mm\;{\times}\;400\;mm$) is manufactured with the application of the amorphous silicon etch step in the 4 mask and 5 mask processes.

  • PDF

평판 디스플레이 세정을 위한 상압 플라즈마 에싱효과에 관한 연구 (A Study on Ashing Effects of Atmospheric Plasma for the Cleaning of Flat Panel Display)

  • 허용정;이건영
    • 반도체디스플레이기술학회지
    • /
    • 제7권2호
    • /
    • pp.35-38
    • /
    • 2008
  • This study shows the improvement of PR-Ashing rates in semi-conductor process using Atmospheric Plasma. Taguchi method is used to improve Ashing rates of photo-resist that is spread on the surface of a wafer. Improvement of Ashing rates is acquired through the decision of the effective factors and suitable combination of the factors. The results show the contribution rate of each factor and the effectiveness of Plasma for PR-Ashing process in this system.

  • PDF

순환식 유전체 장벽 플라즈마 반응기를 이용한 수중 페놀 처리 (Degradation of Phenol in Water Using Circulation Dielectric Barrier Plasma Reactors)

  • 김동석;박영식
    • 한국환경보건학회지
    • /
    • 제38권3호
    • /
    • pp.251-260
    • /
    • 2012
  • Objectives: The purpose of this study was evaluating the applicability of the circulation dielectric barrier plasma process (DBD) for efficiently treating non-biodegradable wastewater, such as phenol. Methods: The DBD plasma reactor system in this study consisted of a plasma reactor (discharge, ground electrode and quartz dielectric tube, external tube), high voltage source, air supply and reservoir. Effects of the operating parameters on the degradation of phenol and $UV_{254}$ absorbance such as first voltage (60-180 V), oxygen supply rate (0.5-3 l/min), liquid circulation rate (1.5-7 l/min), pH (3.02-11.06) and initial phenol concentration (12.5-100 mg/l) were investigated. Results: Experimental results showed that optimum first voltage, oxygen supply rate, and liquid circulation rate on phenol degradation were 160 V, 1 l/min, and 4.5 l/min, respectively. The removal efficiency of phenol increased with the increase in the initial pH of the phenol solution. To obtain a removal efficiency of phenol and COD of phenol of over 97% (initial phenol concentration, 50.0 mg/l), 15 min and 180 minutes was needed, respectively. Conclusions: It was considered that the absorbance of $UV_{254}$ for phenol degradation can be used as an indirect indicator of change in non-biodegradable organic compounds. Mineralization of the phenol solution may take a relatively longer time than that required for phenol degradation.