• Korean Journal of Optics and Photonics
• /
• v.9 no.3
• /
• pp.175-180
• /
• 1998

Nd:YAG single crystal widely used as solid state laser was grown by Czochralski method. <111> single crystal with 0.9at% of $Nd^{3+}$ was grown from the Czochralski furnace with a automatic diameter control system. The vertical temperature gradient in the liquid was the major factor that influence the crystal quality, and the crystal diameter was controlled by the home made computer program. The crystal boule with $\phi$50mm$\times$ι100mm effective size was cut, polished, and antireflection coated. The optical evaluation such as absorption spectrum, fluorescence spectrum coincide with typical features of Nd:YAG single crystal. The laser rod was assembled into the CW laser generator with a Kr lamp. The maximum CW laser output was 70 W and the threshold power and efficiency was 1.3kW and 1.64% respectively.

• International Journal of Control, Automation, and Systems
• /
• v.3 no.2
• /
• pp.252-257
• /
• 2005

In this work, we propose a simple but efficient method to design a target temperature trajectory for pulling speed tracking control of the crystal grower in the Czochralski crystallization process. In the suggested method, the model predictive control strategy is used to incorporate the complex dynamic effect of the heater temperature on the pulling speed into the temperature trajectory design quantitatively. The feedforward trajectories designed by the proposed method were implemented on 200 mm and 300 mm silicon crystal growers in the commercial Czochralski process. The application results have demonstrated its excellent and consistent tracking performance of pulling speed along whole bulk crystal growth.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.1
• /
• pp.50-55
• /
• 2002

$Nd_2O_3$0.2~0.5 wt.% doped $LiNbO_3$single crystals were grown by the Czochralski method. The ZnO doping by 2~8 mole% can improve the resistance of optical damage. In this study, Nd : LiNbO$_3$ single crystals with the periodical domain structure were obtained by CZ method.

• Journal of the Korean Ceramic Society
• /
• v.26 no.5
• /
• pp.661-669
• /
• 1989

The defect structure in LiNbO3 single crystals grown by Czochralski method from the congruently melting composition were investigated. Chemical etching patterns were studied in x-plane, z-plane, and major cleavage plane, respectively, dislocation density was higher at the periphery of crystals than at the center because the thermal stress due to radial temperature gradient had a main effect on it, as compared with dislocations formed from the solid-liquid interface. Many dislocation lineages were arranged along several directions.

• Journal of the Korean Ceramic Society
• /
• v.25 no.6
• /
• pp.699-703
• /
• 1988

Domain structures of LiNbO3 crystals grown by Czochralski method were examined according to the growth axis and the rotational speed of crystals. Ring shape and split domain structures were revealed in Z-axis and Y-axis grown crystals respectively. It was found that the domain structures of grown crystals were closely related to the solid-liquid interface shape during growth.

• Journal of the Korean Ceramic Society
• /
• v.40 no.8
• /
• pp.746-750
• /
• 2003

Using the Czochralski method, Er$_2$O$_3$ doped near stoichiometric LiNbO$_3$ single crystals were grown 15~20 mm in diameter and 30-35 mm in length for Z-axis. Lattice constants were inspected by the X-Ray Diffractometer (XRD) and through Fourier Transform-Infrared Spectrophotometer (FT-IR), it observed absorption band. Also, the distributions of Er concentration were confirmed by the Electron Probe Micro Analysis (EPMA).

• Analytical Science and Technology
• /
• v.23 no.2
• /
• pp.103-108
• /
• 2010

Single crystals of $ZnWO_4$ with [100], [010] and [001] directions were successfully grown by the Czochralski method. The seed crystals for the single crystal growth of $ZnWO_4$ could be induced by the crystal growth using platinum wires applied by the capillary action from the melt. The growth conditions in each direction were investigated in terms of the variations of rotation speed, pulling rate and diameter of the grown crystals. The formation of cracking in the grown crystals during the cooling process could be prevented by annealing effect. The growth directions of the grown crystals were determined using Laue back reflection. The microscopic characteristics of the grown crystals in each direction were discussed, and their physical properties were evaluated for hardness, thermal expansion coefficients and dielectric constants.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.1
• /
• pp.27-40
• /
• 1997

The heat in Czochralski method is transfered by all transport mechanisms such as convection, conduction and radiation and convection is caused by the temperature difference in the molden pool, the rotations of crystal or crucible and the difference of surface tension. This study delvelops the simulation model of Czochralski growth by using the finite difference method with fixed grids combined with new latent heat treatment model. The radiative heat transfer occured in the surfce of the system is treated by calculating the view factors among surface elements. The model shows that the flow is turbulent, therefore, turbulent modeling must be used to simulate the transport phenomena in the real system applied to 8" Si single crystal growth process. The effects of a cusp magnetic field imposed on the Czochralski silicon melt are studied by numerical analysis. The cusp magnetic field reduces the natural and forced convection due to the rotation of crystal and crucible very effectively. It is shown that the oxygen concentration distribution on the melt/crystal interface is sensitively controlled by the change of the magnetic field intensity. This provides an interesting way to tune the desired O concentration in the crystal during the crystal growing.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.4
• /
• pp.620-626
• /
• 1996

$LiNbO_{3}$ single crystals were grown using a self-designed radio-frequency heating Czochralski crystal grower. Congruently melting composition was used and the optimum growth conditions were established. The compensated power control method was very effective to control the outer diameter of the crystal ingots within ${\pm}5\;%$. Scanning electron microscopy was performed to characterize the effect of the $Mg^{2+}$ ions on the formation of the ferroelectric domain in $LiNbO_{3}$.

• Journal of the Korean Ceramic Society
• /
• v.27 no.5
• /
• pp.698-701
• /
• 1990

The necessary conditions for the growth of high quality Bi12SiO20 single crystals by the Czochralski method have been determined. The interface of melt and crystal was transformed convex to concave above 7 rpm. For growth <001> and <111> directions, facet morphology exhibited 4-fold and 6-fold symmetry. When the crystal of <001> growth direction was broadened, minor facet {110} was developed outstandingly.