• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.104-108
• /
• 2002

This paper was investigated the lead free solder characteristics by P mass percentage chang e. Tension test, wetting balance test, spread test, and analysis of intermetallic compound after isothermal aging of Sn-2.5Ag-0.7Cu-0.005P, Sn-2.5Ag-0.7Cu-0.01P, Sn-2.5Ag-0.7Cu-0.02P, Sn-0.7Cu-0.005P were performed for estimation. By adding P on the solder alloys, it was showe d improvement of tensile strength, reduction of intermetallic compound growth and reduction of oxidization of fusible solder under wave soldering processes. After comparing solder alloy containing P with tin lead eutectic solder alloy, p containing solder alloys showed much better solderability than eutectic solder alloys.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.112-112
• /
• 2016

인체접촉시 니켈도금의 알러지 반응을 억제하기 위한 대체 도금기술인 비 시안계 Cu-Sn 합금도금을 개발함에 있어서, 황산구리5수화물과 황산제일주석을 금속염으로 하여 황산 및 계면활성제, 유화제 등을 포함한 각종 유기첨가제를 포함하였고 특히 은백색조의 외관 색상과 안정적인 Cu-Sn 합금전착을 위해 2종의 착화제인 EDTP($C_{14}H_{32}N_2O_4$)와 TEA(Triethanolamine)를 첨가한 비 시안계 Cu-Sn 합금 도금액을 도출하였다. Cu-Sn 합금도금 피막 조성의 균일화를 도모하기 위해서는 합금 도금액중의 Cu와 Sn 금속이온 농도를 일정하게 유지하는 것이 필요하다. 그러나 합금 도금액중 2가 주석이온($Sn^{2+}$)은 수용액중에서 4가 주석이온($Sn^{4+}$)으로 산화됨으로써 도금액 색상이 백탁이 되고 Stannic Hydroxide($Sn(OH)_4$, $SnO_2{\cdot}2H_2O$)이 생성되어 대량의 침전물이 침강하는 문제점이 발생되는 등 시간 경과에 따른 도금액의 경시 변화가 발생되었다. 상기 침전물은 연속여과에 의해 제거 가능하나 합금 도금액중 $Sn^{2+}$ 농도가 지속적으로 감소하게 된다. 이는 합금 도금액중 금속이온 비율이 변동함으로써 합금도금 피막의 조성비를 일정하게 유지하는 것이 곤란해진다. 이에 $Sn^{4+}$ 침전물 생성을 방지하기 위한 산화방지제를 개발하고 또한 산화방지제의 첨가에 따른 도금 피막 외관에 미치는 영향을 평가하여 외관 개선을 위한 광택제를 개발하고자 한다. 본 연구의 결과를 토대로 니켈도금과 동등 이상의 기능 특성을 갖는 비시안계 Cu-Sn 합금도금액을 개발하여 실용화하는 것을 목적으로 하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.4
• /
• pp.71-77
• /
• 2007

In this study, the mechanical and electrical properties of three different ball grid array (BGA) solder joints, consisting of Sn-37Pb, Sn-3.5Ag and Sn-3.5Ag-0.75Cu (all wt.%), with organic solderability preservative (OSP)-finished Cu pads were investigated as a function of reflow number. Based on scanning electron microscopy (SEM) analysis results, a continuous $Cu_6Sn5$, intermetallic compound (IMC) layer was formed at the solder/substrate interface, which grew with increasing reflow number. The ball shear testing results showed that the shear force peaked after 3 reflows (in case of Sn-Ag solder, 4 reflows), and then decreased with increasing reflow number. The electrical property of the joint gradually decreased with increasing reflow number.

• Korean Journal of Materials Research
• /
• v.10 no.12
• /
• pp.799-806
• /
• 2000

Cu$_{6}$Sn$_{5}$-dispersed 63Sn-37Pb solder bumps of 760$\mu\textrm{m}$ size were fabricated on Au(0.5$\mu\textrm{m}$)/Ni(5$\mu\textrm{m}$)/Cu(27$\pm$20$\mu\textrm{m}$) BGA substrates by screen printing process, and their shear strength were characterized with variations of dwell time at reflow peak temperature and aging time at 15$0^{\circ}C$ . With dwell time of 30 seconds at reflow peak temperature, the solder bumps with Cu$_{6}$Sn$_{5}$ dispersion exhibited higher shear strength than the value of the 63Sn-37Pb solder bump. With increasing the dwell time longer than 60 seconds, however the shear strength of the Cu$_{6}$Sn$_{5}$-dispersed solder bumps became lower than that the 63Sn-37Pb solder bumps. The failure surface of the solder bumps could be divided into two legions of slow crack propagation and critical crack propagation. The shear strength of the solder bumps was inversely proportional to the slow crack propagation length, regardless of the dwell time at peak temperature, aging time at 150 $^{\circ}C$ and the volume fraction of Cu$_{6}$Sn$_{5}$ dispersion.> 5/ dispersion.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.134-137
• /
• 2009

Commercially available elemental powders of Cu, Zn, Sn and Se were employed for crystallizing a stannite-type $Cu_2ZnSnSe_4$ compound by means of solid state reaction. $Cu_2ZnSnSe_4$ reaction chemistry was also modeled based on differential-thermal analysis and X-ray powder diffraction results. It was observed that Se tends to react preferably with Cu to form CuSe and $CuSe_2$ phases at low reaction temperature. The formation of $Cu_5Zn_8$ intermetallic phase was found to be the intermediate reaction path for the binary ZnSe formation. A solid state reaction at $320^{\circ}C$ reacted elemental powderst obinary selenides of CuSe, ZnSe and SnSe completely. The crystallization of $Cu_2ZnSnSe_4$ was was detected to begin at $300^{\circ}C$ and its weight fraction increased with an increase of reaction temperature, which most probably formed from the reaction between $Cu_2SnSe_3$ and ZnSe.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.360.2-360.2
• /
• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• Journal of Powder Materials
• /
• v.17 no.6
• /
• pp.477-481
• /
• 2010

Cu-Sn based alloys were manufactured by gas atomization spray casting route in order to achieve a fine scale microstructure and a high tensile strength. The spray cast Cu-10Sn-2Ni-0.2Si alloy had an equiaxed grain microstructure, with no formation of brittle ${\delta}-Cu_{41}Sn_{11}$ phase. Aging treatment promoted the precipitation of finely distributed particles corresponding to ${\delta}-Ni_2Si$ intermetallic phase throughout the $\alpha$-(CuSn) matrix. The cold-rolled Cu-Sn-Ni-Si alloy had a very high tensile strength of 1200 MPa and an elongation of 5%. Subsequent aging treatment at $450^{\circ}C$ for 1h slightly reduced the tensile strength to 700 MPa and remarkably increased the elongation up to 30%. This result has been explained by coarsening the precipitates due to over aging and reducing the dislocation density due to annealing effects.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.4
• /
• pp.39-46
• /
• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.4
• /
• pp.51-57
• /
• 2008

In this paper, wetting and interfacial reaction properties for low Ag containing Sn-Ag-Cu Pb-free solder alloy, i.e., Sn-0.3Ag-0.7Cu were investigated and compared with those of Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu. Melting behavior and stress-strain curves of some Sn-xAg-xCu alloys were also measured using a differential scanning calorimeter(DSC) and a tensile test machine, respectively. In order to enhance insufficient wetting properties of Sn-0.3Ag-0.7Cu alloy, the improvement of wetting properties were analyzed by applying fluxes containing higher content of halide or indium adding of 0.2wt.% into the solder alloy. It was concluded that the small addition of indium is more effective for the improvement of wettability in low temperature range of $230{\sim}240^{\circ}C$ than applying flux containing higher content of halide.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.35.2-35.2
• /
• 2009

최근 본 연구실에서 무연 솔더를 위한 새로운 Cu-Zn 합금 젖음층을 개발하였다. 전해도금을 통하여 Cu-Zn 합금층을 형성한 뒤 그 위에 Sn-4.0wt% Ag-0.5wt% Cu (SAC 405) 솔더를 리플로 솔더링을 통해 솔더접합부를 형성하였으며 계면에서 생성된 금속간 화합물의 형성 및 성장 거동을 연구하였다. SAC/Cu 시스템의 경우, $150^{\circ}C$에서 시효 처리를 실시하는 동안 솔더와 도금된 Cu 계면에서 $Cu_6Sn_5$ 상과 미세한 공공이 형성된 $Cu_3Sn$ 상이 발견되었다. 반면에 SAC/Cu-Zn 시스템에서는 계면에서 $Cu_6Sn_5$ 상만이 형성되었다. 또한 큰 판상형의 $Ag_3Sn$ 상이 SAC/Cu 시스템에 비해 현저하게 억제되었다. SAC/Cu-Zn 계면에서의 금속간 화합물의 성장 속도가 SAC/Cu 계면에서 형성된 금속간 화합물의 성장 속도보다 느리게 나타났다. Cu-Zn 젖음층의 Zn가 솔더와 Cu-Zn 층 사이에서 Cu와 Sn 원자의 상호 확산을 방해하기 때문이다. 본 연구에서는 Cu와 Cu-Zn 층을 이용한 솔더 접합부의 낙하 충격 신뢰성을 연구하였다. 낙하 충격 시험 시편은 두 개의 인쇄 회로 기판을 SAC 405 솔더볼을 이용하여 리플로를 통해 상호연결 하여 제조되었다. 이 때, 각각의 인쇄 회로 기판의 패드에는 Cu 층과 Cu-Zn층을 전해도금을 통하여 각각 $10{\mu}m$두께의 젖음층을 형성하였다. 낙하 시험 시편을 제조한 뒤, 시효 처리에 대한 낙하 저항 신뢰성의 특성을 연구하기 위해 250, 500 시간동안 시효처리를 한 후 각 조건에서 계면에 형성된 금속간 화합물의 성장 거동을 관찰하였으며, 낙하 충격 시험을 실시하였다. 낙하 시험은 daisy chain으로 연결된 시편의 저항이 100 Ohm 이상 측정되었을 때 중단되도록 하였다. Cu-Zn/SAC/Cu-Zn 시편의 경우 초기 리플로를 하였을 때 불량이 발생하는 평균 낙하 수는 350이며, Cu/SAC/Cu 시편의 평균 낙하수는 200 미만으로 나타났다. Cu/SAC/Cu 시편의 경우, 시효처리 시간이 증가함에 따라 평균 낙하수는 큰 폭으로 감소하였지만, Cu-Zn/SAC/Cu-Zn 시편은 불량이 발생하는 평균 낙하수의 감소폭이 보다 완만하게 나타났다. Cu 층에 Zn를 첨가함으로써 솔더와 젖음층 사이에서 형성된 금속간 화합물의 성장 및 미세 공공의 형성이 억제되었고, 솔더 접합부의 과냉을 감소시킴으로써 큰 판상형의 $Ag_3Sn$ 상의 형성을 억제함으로써 Cu-Zn/SAC/Cu-Zn 솔더 접합부에서 Cu/SAC/Cu 솔더 접합부보다 낙하 충격에 대한 저항성 및 신뢰성이 향상되었다. 이는 무연 솔더에 Zn를 첨가하여 낙하 충격 신뢰성을 향상시킨 것과 동일한 효과를 나타냈음을 확인하였다. 본 연구는 한국 과학 기술 재단의 전자패키지 재료 연구 센터(CEPM)와 지식 경제부의 부품 소재 기술 개발 사업의 지원을 받아 수행되었습니다.