• Title/Summary/Keyword: CuInS2

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Effects of Systematic Variation Application of Fe, Mn, Cu, and Zn on the Dry Matter Yields of Orcharograss and White Clover (Fe, Mn, Cu 및 Zn의 Systematic Variation 시비가 Orchardgrass 및 White Clover의 건물수량에 미치는 영향)

  • Jung, Yeun-Kyu
    • Journal of The Korean Society of Grassland and Forage Science
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    • v.24 no.3
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    • pp.193-200
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    • 2004
  • This pot experiment was conducted to investigate the effects of systematic variation application of Fe, Mn, Cu, and Zn on forage performance of orchardgrass and white clover. The treatments of systematic variation were 0/100, 25/75, 50/50, 75/25, and $100/0\%$ in the Fe/Cu(trial-1), Mn/Zn(trial-2), and Fe+Cu/Mn+Zn(trial-3), respectively. The treatments of Fe/Mn/Cu/Zn(trial-4) were composed of $70\%$ in main element and $10\%$ in other 3 elements, respectively. 1. By the systematic variations of Fe, Mn, Cu, and Zn, the yields were more significantly influenced in white clover than in orchardgrass. In addition, the yields of white clover were closely correlated to the trends of root/nodule growth and flowering. In the Fe/Cu trial, the relatively high yields were obtained at the $100/0\%$ in orchardgrass and at the $75/25\%$ in white clover. The yields of white clover were more negatively influenced by the 100/0(Cu control) than by the 0/100(Fe control). The yields of orchardgrass, however, tended to be opposite to the above trends. 2. In the Mn/Zn trial, both forages showed generally high yields at the high ratios of Mn/Zn. Compared with orchardgrass, the yields of white clover were greatly decreased by the Mn-deficiency(low ratio of Mn/Zn). The effects of Zn on forage yields, however, were not recognized. 3. In the Fe+Cu/Mn+Zn trial, the yields of orchardgrass tended to be slightly different among the treatments. The yields of white clover, however, were relatively' high at the 75/25, and showed a severe decrease at the 100/0 in the 2nd half cuts. In the Fe/Mn/Cu/Zn trial, the yields of white clover tended to be relatively high at the Cu and Zn treatments. It was likely to be caused by the balanced Fe/Mn ratio.

Physical and Antibacterial Evaluation of Copper/Bioglass Nanoparticles (Cu/Bioglass Nano Particles; Cu-BGn) in Mineral Trioxide Aggregate(MTA) (구리/생체활성유리나노입자(Cu/Bioglass nano particles;Cu-BGn)를 첨가한 Mineral Trioxide Aggregate (MTA)의 물성 및 항균 평가)

  • Kim, Dong-Ae;Jun, Soo-Kyung
    • The Journal of the Korea Contents Association
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    • v.20 no.6
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    • pp.425-432
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    • 2020
  • For this study copper ions-containing bioactive glass nanoparticles commonly used in mineral trioxide aggregate (MTA) was developed to improve the mechanical properties and promote antibacterial effect of MTA with the original material. The mechanical properties and antibacterial activity of Cu-BGn incorporating varying amounts cooper incorporated bioactive glass nano particles(BGn) 0.5,1.0,2.0 and 4.0 wt% in MTA were characterized composition of the resulting were investigated. The compressive strength was calculated by weighing specimens with a diameter of 4 mm and a thickness of 6 mm according to ISO 6876 (2012). The antimicrobial effect was evaluated using two strains of S. mutans and E. faecalis. The mechanical properties of the test results was Cu-BGn increased no statistically significant difference was observed (p>0.05). Adhesion experiment results S. mutans in contrast to the control group Ortho MTA, 4.0 wt% of Cu-BGn added experimental group showed a significant difference was observed (p<0.05). Also, E. faecalis statistical analysis indicated a significant difference for antibacterial agents between control and Cu-BGn containing(p<0.05). It seems that this Cu-BGn proved that even a antibacterial effect was demonstrated. Therefore, it was suggest that it is necessary for in-depth research into various environments that can reproduce the oral environment.

Growth and Optoelectrical Properties for $CuInS_2$ Single Crystal Thin Film ($CuInS_2$ 단결정 박막 성장과 광전기적 특성)

  • Hong, Kwang-Joon;Lee, Sang-Youl
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.230-233
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    • 2004
  • The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

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Effect of sulfur addition on Cu2ZnSnSe4 thin film by Pulsed Laser Deposition (PLD를 이용한 CZTS의 박막의 S 첨가의 영향)

  • Jang, Yun-Jung;Amal, M. Ikhlasul;Alfaruqy, M. Hilmy;Kim, Kyoo Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.86.1-86.1
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    • 2010
  • Cu2ZnSnSe4는 CIS 태양전지의 In 대체 물질계로 주목을 받고 있는 저가형 태양전지 재료로 장차 차세대 태양전지 재료로 응용이 기대되고 있다. 그러나 에너지 밴드갭이 0.9~1.1eV로 다소 낮아 태양전지 광흡수층 재료로 사용하기 위해서는 wide band gab화 처리가 필요하다. 본 연구에서는 CZTSe에 S를 첨가하여 에너지 밴드갭을 확장하고자 하며, S의 첨가가 CZTSe 박막의 특성에 미치는 영향에 대하여 조사하였다. 실험의 편의성을 도모하고자 펄스레이저 법을 사용하여 증착하였다. 박막 조성 제어에는 Cu, Zn, Sn, Se, S 분말을 볼밀로 분쇄, 혼합하여 균질 혼합상 프리커서를 제조하고 이를 Cold Isostatic Press(CIP) 성형하여 Source target을 사용하였다. Pulsed YAG-Laser를 사용하여 soda lime glass상에 증착하고 조성, 구조, 조직을 관찰하고 에너지 밴드갭, 광흡수계수, 면저항, 전하밀도 등 특성을 조사하였다.

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Cupric Complexes Produced from the Reaction of Cupric Nitrate Trihydrate with S-2-Pyridyl Thioates

  • Choi, Young-Nam;So, Hyun-Soo;Lee, Jae-In;Kim, Sung-Gak
    • Bulletin of the Korean Chemical Society
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    • v.7 no.5
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    • pp.385-388
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    • 1986
  • The reaction of cupric nitrate trihydrate with S-2-pyridyl thioates in acetonitrile was studied. The major products were the corresponding carboxylic acids and $[Cu(NO_3)(C_5H_4NS)(C_5H_5NS$)] (Complex A). Sometimes $[Cu(NO_3)(C_5H_4NS)(H_2O$)] was also obtained in addition to Complex A. When Complex A was recrystallized in dimethylsulfoxide, $[Cu(NO_3)(C_5H_4NS)(C_5H_5NS)$ {$(CH_3)_2SO$}$_2]{\cdot}2H_2O$ was crystallized. The structures of these copper complexes and the role of cupric nitrate in the hydrolysis of S-2-pyridyl thioates are discussed.

Fabricatiion and Characterization of ${Bi_2}{Sr_2}{CaCu_2}{O_8}$ Superconductor Thick Films on Cu Substrates using Cu-free Precursors (Cu-free 전구체를 이용하여 구리 기판 위에 ${Bi_2}{Sr_2}{CaCu_2}{O_8}$ 초전도 후막의 제조 및 특성)

  • 한상철;김상준;한영희;성태현;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.4
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    • pp.349-358
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    • 2000
  • Fabrication and Characterization of Bi$_{2}$/Sr$_{2}$/CaCu$_{2}$/O$_{8}$(Bi2212) superconductor thick films were fabricated successfully on C tapes by liquid reaction between Cu-free precursors of Bi$_{x}$/SrCaO/$_{y}$(x=1.2-2) and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-87$0^{\circ}C$ for several minutes in air oxygen nitrogen and low oxygen pressure. In order to obtain the optimum heat-treatment condition we studied the effect of the precursor composition the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism. Microstructures and phases of thick films were analyzed by films and the reaction mechanism. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superonducting films were examined by the four probe method. At heat-treatment temperature the thick films were in a partially molten state by liquid reaction between CuO of the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure Bi2212 superconducting particle nucleate and grow in preferred orientations.ons.s.

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Preparation of CuS Counter Electrodes Using Electroplating for Quantum Dot-sensitized Solar Cells (전기 도금 공정을 활용한 양자점 감응 태양전지 CuS 상대 전극 제작)

  • SEUNG BEOM HA; IN-HEE CHOI;JAE-YUP KIM
    • Transactions of the Korean hydrogen and new energy society
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    • v.34 no.6
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    • pp.785-791
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    • 2023
  • Copper sulfide (CuxS) has been extensively utilized as a counter electrode (CE) material for quantum dot solar cells (QDSCs) due to its exceptional catalytic activity for polysulfide electrolytes. The typical fabrication method of Cu2S CEs based on brass substrate is dangerous, involving the use of a highly concentrated hydrochloric acid solution in a relatively high temperature. In contrast, electroplating presents a safer alternative by employing a less acidic solution at a room temperature. In addition, the electroplating method increases the probability of obtaining CEs of consistent quality compared to the brass method. In this study, the optimized electroplating cycle for CuS CEs in QDSCs has been studied for the highly efficient photovoltaic performances. The QDSCs, featuring electroplated CuS CEs, achieved an impressive efficiency of 7.18%, surpassing the conventional method employing brass CEs, which yielded an efficiency of 6.62%.

Optical properties and Growth of CuAlSe$_2$ Single Crystal Thin Film by Hot Wal1 Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 $CuAlSe_2$ 단결정 박막 성장과 점결함 특성)

  • Hong, Kwang-Joon;Yoo, Sang-Ha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.76-77
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    • 2005
  • Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

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A Study on the Lateral Flow in Polluted Soft Soils (오염된 연약지반의 측방유동에 관한 연구)

  • 안종필;박상범
    • The Journal of Engineering Geology
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    • v.11 no.2
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    • pp.175-190
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    • 2001
  • This study investigates the existing theoretical backgrounds in order to examine the behavior of lateral flow according to the plasticity of soils when unsymmetrical surcharge is worked on polluted soft soils by comparing and analyzing the results measured through model tests. Model tests are canied out as follows soil tank, bearing frame and bearing plate are made. By increasing unsymmetrical surcharge to the ground soils with the consistent water content and with gradually increased polluted materials at intervals, the amounts of settlement, lateral displacement and upheaval were respectively observed. In conclusion, the value of critical surcharge was expressed as q$_{cr}$=2.78$_{cu}$ which was similar to those Tschebotarioff(q$_{cr}$=3.0$_{cu}$) and Meyerhof(q$_{cr}$=(B/2H+$\pi$/2)$_{cu}$) had been proposed. The value of ultimate capacity was expressed as q$_{ult}$=4.84$_{cu}$ which was similar to that of Prandtl. The lateral flow pressure is adeQuately calculated by the eQuation(P$_{max}$=K$_o$ r H) and the maximum value of lateral flow pressure is found near O.3H of layer thickness(H) and is higher to ground surface than the ones in composition pattern, Poulos distribution pattern and softclay soils (CL, CH) which is not polluted. The stability control method used in this research followed the management diagram of Tominaga.Hashimoto, Shibata.Sekiguchi, Matsuo.Kawamura who use the amounts of plasticity displacement by lateral flow. As a result, the ultimate capacity values in the diagram {S$_v$-(Y$_m$/S$_v$)} of Matsuo.Kawamura and in the diagram {(q/Y$_m$)-q} of Shibata. Sekiguchi were smaller than in the ones of load-settlement curve (q-S$_v$).

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Formation of Ohmic Contact in P-Type CdTe Using Cu2 Te Electrode and Its Effect on the Photovoltaic Properties of CdTe Solar Cells (Cu2Te 배면 전극을 이용한 p-type CdTe 태양전지의 ohmic contact 형성 및 CdTe 태양전지의 광전압 특성)

  • Kim, Ki-Hwan;Yun, Jae-Ho;Lee, Doo-Youl;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.918-923
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    • 2002
  • In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.