• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.401-401
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• 2016

Although vertically aligned one-dimensional (1D) structure has been considered as efficient forms for photoelectrode, development of efficient 1D nanostructured photocathode are still required. In this sense, we recently demonstrated a simple fabrication route for CuInS2 (CIS) nanorod arrays from aqueous solution by template-assisted growth-and-transfer method and their feasibility as a photoelectrode for water splitting. In this study, we further evaluated the photoelectrochemical properties surface-modified CIS nanorod arrays. Surface modification with CdS and ZnS was performed by successive ion layer adsorption and reaction (SILAR) method, which is well known as suitable technique for conformal coating throughout nanoporous structure. With surface modification of CdS and ZnS, both photoelectrochemical performance and stability of CuInS2 nanorod arrays were improved by shifting of the flat-band potential, which was analyzed both onset potential and Mott-schottky plot.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• 한국재료학회지
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• 제5권8호
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• pp.988-996
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• 1995

CdS/CuInSe$_2$태양전지의 광흡수층인 CuInSe$_2$박막을 In$_2$Se$_3$와 Cu$_2$Se 이원화합물을 precursor로 하여 진공증발법으로 제조하였고 특성을 분석하였다. 먼저 유리기판위에 0.5$\mu\textrm{m}$ 두께의 In$_2$Se$_3$를 susceptor온도를 변화시켜가면서 증착한 결과 40$0^{\circ}C$에서 가장 평탄하고 치밀한 박막이 형성되었다. 그 위에 Cu$_2$Se$_3$를 진공증발시켜 증착함으로써 in-situ로 CuInSe$_2$박막을 형성시키고 In$_2$Se$_3$를 추가로 증발시켜 CuInSe$_2$박막내에 존재하는 제 2상인 Cu$_2$Se를 제거시켰다. 이 경우 susceptor온도가 $700^{\circ}C$ 일때 미세구조가 가장 좋은 CuInSe$_2$박막이 형성되었으며 약 1.2$\mu\textrm{m}$ 두께에서 약 2$\mu\textrm{m}$의 결정립크기와 (112) 우선배향성을 가졌다. 추가 In$_2$Se$_3$양이 증가함에 따라 CuInSe$_2$박막의 조성편차보상으로 hole 농도가 감소하고 전기 비저항이 증가하였고, optical bandgap은 거의 일정한 값인 1.04eV의 값을 가졌다. Mo/유리기판 위에 증착한 CuInSe$_2$박막도 유리기판 위에 증착한 박막과 비슷한 미세구조를 가졌으며, 이 박막을 토대로 ZnO/CdS/CuInSe$_2$/Mo 구조를 갖는 태양전지 구현이 가능할 것으로 생각된다.

• 한국결정성장학회지
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• 제7권2호
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• pp.315-323
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• 1997

수직승화방법을 이용하여 시료의 용융점 미만의 온도에서 CdS 단결정을 성장하였다. 분말법을 이용한 X-ray 실험으로부터 구한 CdS 단결정의 격자상수 값은 $a_0=4.139\AA$, $c_0=6.719\AA$이었다. 성장된 CdS 단결정과 CuCl 용액을 사용하여 $Cu_2$S/CdS 태양전지를 제작한 후 2분 동안 공기중에서 $250^{\circ}C$로 열처리한 후 light-to-dark J-V cross over effect를 측정하였다. 측정된 Voc, Jsc, Vop와 fill factor값은 각각 0.40 volt, $4.2mA/\textrm{cm}^2$, 0.31 volt,$3.8mA/\textrm{cm}^2$, 0.68이었으며, 효율은 3.8 %를 나타내었다. 제작된 태양전지의 spectral response는 광발광 실험으로부터 498 nm (2.49eV)와 585 nm (2.12 eV)에서 그 peak가 나타남을 확인하였다.

• 한국태양에너지학회 논문집
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• 제25권4호
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• The Plant Pathology Journal
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• 제40권3호
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• pp.261-271
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• 2024

Sulfur is one of the inorganic elements used by plants to develop and produce phytoalexin to resist certain diseases. This study reported a method for preparing a material for plant disease resistance. Sulfur nanoparticles (SNPs) stabilized in the chitosan-Cu²⁺ (CS-Cu²⁺) complex were synthesized by hydrolysis of Na₂S₂O₃ in an acidic medium. The obtained SNPs/CS-Cu²⁺ complex consisting of 0.32% S, 4% CS, and 0.7% Cu (w/v), contained SNPs with an average size of ~28 nm as measured by transmission electron microscopy images. The X-ray diffraction pattern of the SNPs/CS-Cu²⁺ complex showed that SNPs had orthorhombic crystal structures. Interaction between SNPs and the CS-Cu²⁺ complex was also investigated by ultraviolet-visible. Results in vitro nematicidal effect of materials against Meloidogyne incognita showed that SNPs/CS-Cu²⁺ complex was more effective in killing second-stage juveniles (J2) nematodes and inhibiting egg hatching than that of CS and CS-Cu²⁺ complex. The values of LC₅₀ in killing J2 nematodes and EC₅₀ in inhibiting egg hatching of SNPs/CS-Cu²⁺ complex were 75 and 51 mg/l, respectively. These values were lower than those of CS and the CS-Cu²⁺ complex. The test results on the nematicidal effect against M. incognita on coffee pots showed that the SNPs/CS-Cu²⁺ complex was 100% effective at a concentration of 150 mg/l. Therefore, the SNPs/CS-Cu²⁺ complex could be considered as a biochemical material with potential for agricultural applications to control root-knot nematodes.

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2813-2817
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• 2014

A new magnetic semiconductor material was synthesized to enable separation after a liquid-type photocatalysis process. Core@shell-structured $CuFeS_2@TiO_2$ magnetic nanoparticles were prepared by a combination of solvothermal and wet-impregnation methods for photocatalysis applications. The materials obtained were characterized using X-ray diffraction, transmission electron microscopy, ultraviolet-visible, photoluminescence spectroscopy, Brunauer-Emmett-Teller surface area measurements, and cyclic voltammetry. This study confirmed that the light absorption of $CuFeS_2$ was shifted significantly to the visible wavelength compared to pure $TiO_2$. Moreover, the resulting hydrogen production from the photo-splitting methanol/water solution after 10 hours was more than 4 times on the core@shell structured $CuFeS_2@TiO_2$ nanocatalyst than on either pure $TiO_2$ or $CuFeS_2$.

• Applied Microscopy
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• 제35권4호
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• pp.1-9
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• 2005

이 논문에서 Al-Cu-Mg 합금의 미세 석출 입자의 S-상 ($Al_2CuMg$) 결정구조에 대해 전자회절실험에 의한 포괄적인 연구 결과가 보고 되어 있다. 이 실험에는 한 S-상 입자를 포함하는 최소 영역의 일정 zone축의 회절패턴(SAED) 관찰과 이에 대응되는 운동학적 이론을 기초로 한 패턴의 시물레이션과의 비교 분석, 그리고 관측된 회절 패턴 필름으로부터 각 Bragg회절 점의 강도의 정량적 데이터 추출과 운동학적 및 동역학적 회절 강도 계산과의 비교 검토의 과정을 포함하고 있다. 이러한 연구의 한 결과 S-상의 결정구조는 일찍이 X-ray 방법으로부터 얻은 PW 모델결정(Perlitz and Westgren, 1943)과 일치함을 보여주고 있고, HREM 방법에 의해 새로이 구한 RaVel (Radmilovic et al., 1999) 모델과는 전혀 맞지않음이 판명되었다.

• 한국재료학회지
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• 제5권5호
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.