• Journal of the Korean institute of surface engineering
• /
• v.27 no.5
• /
• pp.273-284
• /
• 1994

Thermal behavior of Cu-Cr thin alloy films has been investigated by SEM, AES, and TEM. Cu-Cr alloy films containing 3wt% Cr, 8wt% Cr have been sputter-deposited onto polyimide substrates and heat treated at $400^{\circ}C$ for 2hrs in the various atmosphere. Before heat treatment, Cu and Cr content in the film are uniform through the thickness and oxygen content in the film is negligible. Redistribution of Cr, Cu, and O in the film due to heat treatment depends on the Cr content and heat treatment atmoshpere. There kinds of thermal behavior are ascribed to the formation of surface and interface oxides as well as internal oxidation. Hillocks are observed on the surface of Cu-Cr alloy films which have been heat treated in N2. The hillocks are composed of large grainss of Cu.

• Journal of Korean Ophthalmic Optics Society
• /
• v.3 no.1
• /
• pp.229-235
• /
• 1998

This paper reports the preparation and characterization of colored coatings of $SiO_2-TiO_2-M_xO_y$ (M = Co, Cr or Cu). Films of different compositions ranging from a molar content of transition metals of 5% to 20% have been prepared on soda-lime-silica slide glasses by the sol-gel process. The films have been characterized by a photospectroscopy. The color and reflectance of the films was expressed in Lab color chart and on spectra plot. 'L' as lightness and all reflectance decreased with increase of the content of transition metals. The coating of Co, Cu and Cr cotaining system showed light blue, green and lemon-yellowish color, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.1
• /
• pp.61-68
• /
• 2007

Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.665-668
• /
• 2008

Multi-layered thin films of $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$, Cr, Al were deposited on glass substrate by evaporation process. As high and low refractive index material, $Fe_2O_3$ and $Na_3AlF_6$ were selected and additionally Cu, Al and Cr were chosen as mid reflective layer respectively. Optical properties including reflectance were systematically studied depending on optical thickness of $Na_3AlF_6$ especially $0.25{\lambda}$ and $0.5{\lambda}$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}C$, the $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$ show the colour rage between red and orange in $0.25{\lambda}$ and green and pupple in $0.5{\lambda}$ respectively. When the Al was used as mid reflective layers in $Fe_2O_3/Na_3AlF_6/Fe_2O_3$ system, typical yellow colour and mixed colour between green and pupple were appeared in $0.25{\lambda}$ and $0.5{\lambda}$ of $Na_3AlF_6$ respectively. As compared the experimental result to simulation data, it was found out that the experimental data is relatively well matched with the EMP simulation data.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.3
• /
• pp.11-17
• /
• 2004

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.

• Journal of the Korean Chemical Society
• /
• v.44 no.4
• /
• pp.322-327
• /
• 2000

A new absorption spectrometric method for the determination of the Cr$_2O_7^{2-}$ ionin acidic media has been developed. The new method is based on the oxidation-reduction reaction of the HCr$O_4^-$ ion with H$_2$O$_2$forming a deep blue CrO(O$_2$) $_2$ andis coupled with a technique of flow injection analysis(FIA). The new method provides a linear calibration curve which accurately follows the Beer's law over a wide range of the analytical concentrations(2.0 ${\times}$ $10^{-6}$M~8.0 ${\times}$ $10^{-3}$M) of K$_2$Cr$_2$O$_2$. The sensitivity of the new method is approximately two times greater than the current method and the effects of the interfering substances such as V, Co, Ni, Fe, and Mn are almost negligible except Cu.

• Transactions of Materials Processing
• /
• v.7 no.5
• /
• pp.481-488
• /
• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2004.05a
• /
• pp.101-107
• /
• 2004

각종 전자기기의 소형화, 고성능화 요구에 따라 회로 또는 기판의 고집적화에 따른 대안으로 도입된 COF(Chip On Film)공정에서 PI(polyimide)/buffer layer/Cu의 접착력 개선을 목적으로 본 연구가 진행 되었다. 그리고 buffer layer로써 Cr을 증착 할 때 부착력의 개선을 목적으로 개질처리를 할 때는 RF plasma장비를 사용하였다. 실험 변수로는 peel strength에 대한 buffer layer의 종류와 증착시간, 표면 개질처리시 $O_2$/Ar비이다. Buffer layer의 종류에 따른 접착력은 Cr보다 Ni이 우수하였고 peel strength와 Cu THK는 같은 buffer layer의 증착 structure에서 비례 관계를 나타냈으며, Cr의 증착 시간과 Cu의 증착 시간을 변수로 peel strength test한 값은 Cr증착시간이 30초, Cu증착시간이 20분일때 40g/mm로 최적의 접착력이 나타났다. 증착전 PI의 개질 처리시 $O_2$/Ar 유량비에 따른 peel strength값은 $O_2$/Ar유량비가 증가 할수록 향상되었으며, 2/5에서 최고값인 58g/mm가 나타났다. 그 이상에서는 오히려 감소하였다.

• Clean Technology
• /
• v.23 no.1
• /
• pp.27-33
• /
• 2017

In this study, toxicities of seven metals (Cu, Cd, Cr, As(III), As(V), Zn, Ni) and five metal oxide nanoparticles (NPs: CuO, ZnO, NiO, $TiO_2$, $Fe_2O_3$) were evaluated based on the growth of Chlorella vulgaris. Effect on algae growth was evaluated by integrating the results of absorption, chlorophyll content, and cell count. The toxicity rankings of metals was observed as Cr ($0.7mgL^{-1}$) > Cu ($1.7mgL^{-1}$) > Cd ($3.2mgL^{-1}$) > Zn ($3.9mgL^{-1}$) > Ni ($13.2mgL^{-1}$) > As(III) ($17.8mgL^{-1}$) ${\gg}$ As(V) (> $1000mgL^{-1}$). Slightly different orders and sensitivities of metal toxicity were examined depending on endpoints of algal growth. In case of NPs, regardless of endpoints, similar toxicity rankings of NPs ($TEC_{50}$) were observed, showing ZnO ($2.4mgL^{-1}$) > NiO ($21.1mgL^{-1}$) > CuO ($36.6mgL^{-1}$) > $TiO_2$ ($62.5mgL^{-1}$) > $Fe_2O_3$ ($82.7mgL^{-1}$). These results indicate that an integrating results of endpoints might be an effective strategy for the assessment of contaminants.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.267-274
• /
• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.