• 한국결정성장학회지
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• 제13권5호
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• pp.230-234
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• 2003

GaAs (001) 기판과 완충층을 사용한 ZnTe/GaAs(001) 기판 위에 고농도의 Zn 조성을 가지는 $Cd_xZn_{1-x}$Te/GaAs, $Cd_xZn_{1-x}$Te/ZnTe/GaAs 에피층 구조를 성장시켰다. 이때 $Cd_xZn_{1-x}$Te 에피층에서의 CuPt형의 규칙상 형성, 미세구조적 특성과 광발광특성을 X-선회절과 전자회절상, 고분해능 투과전자현미경, 그리고 저온 광발광 측정 장치를 이용하여 연구하였다.

• 대한치과재료학회지
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• 제44권3호
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• pp.207-216
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• 2017

금속-세라믹용 수복물에서 하부 구조물 제작에 사용되는 합금 중 하나인 Pd-Cu-Ga-Zn계 합금은 비교적 최근에 개발된 합금인 이유로 인해 도재 용착을 위한 소성 과정을 거치면서 합금에서 일어날 수 있는 경도 변화가 아직 밝혀지지 않았다. 그러나 이와 조성이 유사한 Pd-Cu-Ga-In-Au계 금속-세라믹용 합금의 경우 모의 소성 과정에서 경도가 하강한 것으로 밝혀져 있다. 따라서 Pd-Cu-Ga-Zn계 합금 또한 소성 과정 중에 합금의 연화가 일어날 것으로 예상되었으며 금속-세라믹용 Pd-Cu-Ga-Zn계 합금의 모의 소성 시 냉각 속도가 석출 경화에 미치는 영향을 조사하여 다음과 같은 결과를 얻었다. 냉각 속도가 빠른 경우(Stage 0) 매 소성 단계에서 합금의 경도가 상승하였고, 최종 경도 값도 높게 유지되었다. 냉각 속도가 느린 경우(Stage 3) 소성 첫 단계에서는 경도가 가장 높았지만, 소성 완료 후 합금의 최종 경도는 더 낮아졌다. 매 소성 단계에서 Stage 0으로 냉각한 시편에서 소성 과정 동안 경도가 상승한 원인은 석출 경화에 기인하였다. 주조 후 매 소성 단계에서 Stage 3의 냉각 속도로 냉각한 시편에서 소성 과정 동안 경도가 하강한 원인은 기지와 판상형 석출물 내부에 생성된 점 모양의 석출물의 조대화에 기인하였다. 기지와 판상형 석출물은 CsCl-type의 $Pd_2(Cu,Ga,Zn)$ 상이며, 입자형 구조는 Cu, Ga, Zn을 고용한 면심입방(face-centered cubic) 구조의 Pd-rich ${\alpha}$ 상이었다. $1,010^{\circ}C$에서 산화처리 한 시편을 더 낮은 온도에서 여러 단계로 소성함에 따라 Pd-rich ${\alpha}$ 상으로 이루어진 입자에 고용되어 있던 Cu, Ga, Zn이 Pd와 함께 석출되어 Pd-rich ${\alpha}^{\prime}$ 입자와 $Pd_2(Cu,Ga,Zn)$으로 이루어진 ${\beta}^{\prime}$ 석출 상으로 상 분리가 진행되었다. 이상으로부터 Pd-Cu-Ga-Zn계 합금은 모의 소성 시 냉각 속도를 빠르게 함으로써 최종 보철물의 내구성을 향상시킬 수 있다고 생각되었다.

• 대한전기학회논문지
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• 제43권2호
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• pp.296-302
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• 1994

Polycrystalline CuInSeS12T thin were prepared by depositing Cu/In layer, which was sequentially sputtered varying the Cu/(Cu+In) mole ratio, on glass substrate and selenizing with selenium metal vapor in a nitrogen atmosphere. Compositional and structural, characterization was carried out by X-ray diffraction (XRD), wavelength-dispersive spectroscopy(WDS), and scanning electron microscope(SEM). Electrical characterization was carried out by the measurements of Hall effect, electrical resistivity. Large indium loss occurs in early stage of the selenization process. The selenized films which had mole ratios larger than 0.28 have chalcopyrite CuInSeS12T phase and these that had less mole ratios have sphalerite phase. The selenized films containing CuS1xTSe phase have Cu-rich CuInSeS12T phase and these that did not contain CuS1xTSe have In-rich CuInSeS12T phase. By optimizing the sputtering conditions,it is possible to fabricate CuInSeS12T thin films which have little secondary phases and an appropriate hole concentration (10S015T ~ 10S016TcmS0-3T) for solar cells.

• 한국세라믹학회지
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• 제27권5호
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• pp.677-683
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• 1990

Melt-textured growth of the YBa2Cu3O7-x phase from a supercooled melt created locally aligned, barshaped grains of the orthorhombic 1-2-3 phase. Based on all the observed phenomena, the gross mechanism of the melt-textrued growth of YBa2Cu3O7-x on the (100) plane of MgO was delineated by three basic patterns of reactions. These are : (ⅰ) formation of the aligned 1-2-3 phase and the Y-rich 2-1-1 phase at the bulk region away from the (100) plane of MgO ; (ⅱ) formation of the Cu-richprecipitates at the interfacial region by the selective interface-induced precipitation of the liquid phase ; (ⅲ) condensation reaction of the entrapped Cu-rich vapor with Mg atoms during the initial stage of rapid cooling from 130$0^{\circ}C$ to 98$0^{\circ}C$.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 춘계 학술발표대회 개요집
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• pp.45-47
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• 2004

We have investigated the microstructures and the mechanical properties of TiA1/Cerameti1721 (Ag-Cu-Ti insert metal)/AISI4140 joints at 800$^{\circ}C$ for 60 to 300s using induction brazing method. Two continuous reaction layers of AICuTi and AICu$_2$Ti were formed at the interface between the braze and TiAl, whose thickness increased with the brazing time. The braze consisted of Ag-rich, Ti-rich, CuTi and CuTi$_2$ phases. The maximum tensile strength achieved 296MPa, which was 71% of that of TiAl base metal, for the specimen bonded at 800$^{\circ}C$. Further increase of the brazing temperature and time resulted in constant deterioration of its bonding strength due to large amount of brittle IMC.

• 한국표면공학회지
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• 제4권1호
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• pp.16-23
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• 1971

In this study , fluoborte solution consisting of lead fluoborate, tin fluoborate and cupric acetate was used. By addition of small amount of Cu+= ion to the solution, the Cu content of deposition layer was almost controlled less than 5%. The amount of Cu in deposition layer was almost constant without any influence of Pb++ & Sn++ in the solution, and the amount of Pb was increased by the increase of total concentration of Pb++ +Sn++ in the solution, and the amount of Pb was increased by the increase of total concentration of Pb++ +Sn++ in the solution . Agitation of plating solution & low current density result in the increase of Cu content. Analyzing of microscopic structures and etching tests of the deposited alloy, it was believed that the alloy had a lamellar structure consisting of copper rich lamellar and lead rich layer.

• 한국표면공학회지
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• 제32권3호
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• pp.433-439
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• 1999

In this study, the diffusion barrier properties of $1000\AA$ thick molybdenum compounds (Mox=1-5 Si) were investigated using sheet resistance measurements, X-ray diffractometry (XRD), and Rutherford back scattering spectrometry (RBS). Each barrier material was deposited by the de and rf magnetron co-sputtering of Mo and Si, respectively, and annealed at $500-700^{\circ}C$ for 30 min in vacuum. Each barrier material was failed at low temperatures due to Cu diffusion through grain boundaries and defects of barrier thin films or through the reaction of Cu with Si within Mo-barrier thin films. It was found that Mo rich thin films were less effective than Si rich films to Cu penetration activating Cu reaction with the substrate at a temperature higher than $500^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.83-90
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• 2017

본 연구에서는 미세피치 패키지 적용을 위한 기초 실험으로 thin ENEPIG(Electroless Nickel Electroless Palladium Immersion Gold) 도금층을 형성하여 솔더링 특성을 평가하였다. 먼저, Sn-3.0Ag-0.5Cu (SAC305) 솔더합금에 대한 thin ENEPIG 도금층의 젖음 특성이 평가되었으며, 순차적인 솔더와의 반응에 대한 계면반응 및 솔더볼 접합 후 고속 전단 시험을 통한 접합부 기계적 신뢰성이 평가되었다. 젖음성 시험에서 침지 시간이 증가함에 따라 최대 젖음력은 증가하였으며, 5초의 침지 시간 이후에는 최대 젖음력이 일정하게 유지되었다. 초기 계면 반응 동안에는 $(Cu,Ni)_6Sn_5$ 금속간화합물과 P-rich Ni 층이 SAC305/ENEPIG 계면에서 관찰되었다. 연장된 계면반응 후에는 P-rich Ni 층이 파괴 되었으며, 파괴된 P-rich Ni 층 아래에는 $(Cu,Ni)_3Sn$ 금속간화합물이 생성되었다. 고속 전단 시험의 경우, 전단속도가 증가함에 따라 취성 파괴율이 증가하였다.

• 한국주조공학회지
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• 제30권3호
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• pp.100-110
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• 2010

The solidification sequence and formation of intermetallic phase of Fe-rich Al-Si-Cu alloy were investigated by using real-time imaging of synchrotron X-ray radiation. Effects of cooling rate during uni-directional solidification on the resultant solidification behavior was also studied in a specially constructed vacuum chamber in the SPring-8 facility. The series of radiographic images were complementarily analyzed with conventional analysis of OM and SEM/EDX for phase identification. Detailed solidification sequence and formation mechanisms of various phases were discussed based on real-time image analysis. The growth rates of $\alpha$-AlFeMnSi and ${\beta}-Al_5FeSi$ were measured in order to understand the growth behavior of each phase. It is suggested that real-time imaging technique can be a powerful tool for the precise understanding of solidification behavior of various industrial materials.

• 한국분말재료학회지
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• 제14권2호
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• pp.108-115
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• 2007

Cu-Ni-P alloy nano powders were fabricated by the electrical explosion of electroless Ni plated Cu wires. The effect of applied voltage on the explosion was examined by applying pulse voltage of 6 and 28 kV, The estimated overheating factor, K, were 1.3 for 6 kV and 2.2 for 28 kV. The powders produced with pulse voltage of 6 kV were composed of Cu-rich solid solution, Ni-rich solid solution, and $Ni_3P$ phase. While, those produced with 28 kV were complete Cu-Ni-P solid solution and small amount of $Ni_3P$ phase. The initial P content of 6.5 at.% was reduced to 2-3 at.% during explosion due to its high vapour pressure.