• Current Photovoltaic Research
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• 제3권4호
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• 한국재료학회지
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• 제19권2호
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.579-581
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• 2004

A new DCM derivative containing the phenoxazine moiety (DCPXZ) has been synthesized for use as a red fluorescent dye molecule in organic light-emitting diodes (OLEDs). The photoluminescence and electroluminescence properties of DCPXZ were examined. The maximum photoluminescence of DCPXZ in chloroform solution ($10^{-5}$ mol) was observed at 616 nm. EL devices were fabricated with the structure ITO/PEDOT-PSS/Cu-PC(15nm)/${\alpha}$-NPD(45nm)/$Alq_3$:DCPXZ(30nm)/$Alq_3$(30nm)/LiF(0.5nm)/Al. The maximum EL emission for the 2.0% DCPXZ-doped device was at 608 nm with CIE coordinates (0.57, 0.42). The EL device exhibited a maximum brightness of 15,000 cd/$m^2$ at 19.4 V and a power efficiency of 1.04 lm/W at a luminance of 100 cd/$m^2$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.64-65
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• 2002

Recently the synthetic antiferromagnetic layer (SAF) has received much attention because it replaces the pinned layer of the conventional spin valve (CSV) sensors and its overall performance [1], The spin valve (SV) with SAF has the from buffer/F/Cu/APl/Ru/AP2/AF, where F is the soft ferromagnetic layer (typically NiFe with CoFe interfacial doping), AP1 and AP2 are two ferromagnetic layers (typically CoFe alloys) antiferromagnetically coupled through a thin Ru layer. (omitted)

• 한국결정성장학회지
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• 제22권2호
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• pp.78-83
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• 2012

$La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3-{\delta}}$(LSMCu)에서 Sr 함량에 따른 구조적 변화와 전기전도도에 대해 연구, 고찰하였다. EDTA citric complexing process(ECCP)로 페로브스카이트 구조를 갖는 $La_{0.8}Sr_{0.2}MnO_3$(LSM)와 $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$($0.1{\leq}x{\leq}0.4$)을 제조하였다. Sr 함량이 증가할수록 격자상수와 격자부피는 감소하는 경향을 나타내었으며, 이는 Sr 함량이 증가함에 따라 B-site에서 증가하는 $Mn^{4+}$ 이온과 $Cu^{3+}$ 이온의 영향인 것으로 판단하였다. $0.1{\leq}x{\leq}0.3$ 범위의 조성에서 Sr 함량이 증가할수록 $500{\sim}1000^{\circ}C$에서 측정된 전기전도도는 증가하였고, x = 0.3 조성에서는 $750^{\circ}C$와 $950^{\circ}C$에서 각각 172.6 S/cm와 177.7 S/cm (최고값)를 나타내었다. 반면, x = 0.4 조성에서는 전기전도도가 감소하였는데 이는 입계에 발생한 산화물에 의한 영향으로 판단하였다. Sr 함량이 증가함에 따라 B-site에 존재하는 $Mn^{4+}$ 이온과 $Cu^{3+}$ 이온의 증가로 인해 격자수축이 발생하고, hopping mechanism에 관여하는 charge carrier들이 늘어나 전기전도도가 증가한 것으로 판단하였다.

• Progress in Superconductivity
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• 제8권1호
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• pp.87-92
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• 2006

The effects of Ba and Ce addition has been investigated in YBCO prepared by trifluoroacetate(TFA) metalorganic depostition(MOD) method. Precursor solutions with cation ratios of Y:Ba:Cu:Ce=1:2+x:3:x(x=0, 0.05, 0.1 and 1.5) have been prepared by adding an excess amount of cerium and barium. Coated film was calcined at lower temperature under a moisture-containing oxygen atmosphere. Superconducting YBCO films have been obtained by performing conversion heat treatment at temperature of $780{\sim}810^{\circ}C$ under a moisture-containing Ar(1,000 ppm oxygen) atmosphere. It has been shown that the critical current($I_c$) of YBCO film was degraded by doping of Ba and Ce atoms. But $I_c$ was increased as the amount of doped Ba and Ce content increased from 5% to 15 %. It was observed that there was little increase of a flux pinning force with Ba and Ce addition in YBCO film prepared by TFA-MOD process.

• 한국산학기술학회논문지
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• 제15권11호
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• pp.6952-6957
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• 2014

광촉매 반응에서 $TiO_2$에 금속물질을 첨가하면 촉매표면이 변화되며, 이러한 금속물질은 광분해반응의 속도를 증가시킨다. 본 연구에서는 $TiO_2$ 광촉매의 광분해능력을 향상시키기 위해 다양한 방법을 이용하여 개질하였으며, 개질된 광촉매의 광분해특성은 회분식 광반응기를 이용하여 조사하였다. 우수한 $TiO_2$ 광촉매용액을 얻기 위해 여러 종류의 분산제와 안정제를 조사하였으며, 분산제로는 isoproply alcohol, 안정제로는 sodium silicate가 적합하였다. 톨루엔 분해반응을 향상시키기 위해 다양한 금속물질을 $TiO_2$ 광촉매에 첨가하여 광분해효율을 조사한 결과 Pd가 가장 우수하였으며, Cu와 W도 우수하였다. Pd를 첨가한 경우 25%의 제거효율 향상이 있었다. 그러나 Fe의 경우 광촉매분해반응을 상당히 저해하는 것으로 나타났다. $Pd/TiO_2$ 광촉매에 Cu 또는 W를 부가적으로 첨가하여도 촉매의 광분해효율에는 증가가 없었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.18.2-18.2
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• 2010

For the past a few years, we have intensively researched the printable inorganic conductors and ZnO-based amorphous oxide semiconductors (AOSs) for thin-film transistors. For printable conductor materials, we have focused on the aqueous Ag and Cu ink which possess a variety of advantages, comparing with the conventional metal inks based on organic solvent system. The aqueous Ag ink was designed to achieve the long-term dispersion stability using a specific polymer which can act as a dispersant and capping agent, and the aqueous Cu ink was carefully formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. For printable ZnO-based AOSs, we have researched the noble way to resolve the critical problem, a high processing-temperature above $400^{\circ}C$, and recently discovered that Ga doping in ZnO-based AOSs promotes the formation of oxide lattice structures with oxygen vacancies at low annealing-temperatures, which is essential for acceptable thin-film transistor performance. The mobility dependence on annealing temperature and AOS composition was analyzed, and the chemical role of Ga are clarified, as are requirements for solution-processed, low-temperature annealed AOSs.

• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2008년도 춘계 종합학술대회 논문집
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• pp.301-305
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• 2008

유기 발광 다이오드(Organic light-emitting diode, OLED)는 저전력 구동, 자체발광, 넓은 시야각, 우수한 고해상도, 풀 칼라, 높은 재현성, 빠른 응답속도, 간편한 제조 공정 등의 장점을 가지고 있으나, 고성능 디스플레이로서 실용화하기 위해서는 아직도 해결되어야 할 과제가 많다. 소자의 저소비전력, 제조공정의 안정성, 대형 기판기술, 봉지 기술, 소자의 수명, 풀 컬러화를 위한 적색, 청색, 발광소자의 고휘도 등이 시급하다. 무엇보다 중요한 것은 유기 발광 소자의 효율을 향상시키는 것이 상용화를 위한 키(key) 이다. 이를 위해서 유기 발광 소자의 구조 개선과 새로운 유기 물질 적용을 통해 구동전압을 낮춤으로써 효율을 향상시킬 수 있다. 따라서 본 연구에서는 유기 발광 소자의 효율을 향상시킬 목적으로 ITO/TPD/Znq2+DCJTB/Znq2/Al의 구조와 ITO/CuPc/N PB/Alq3+DCJTB/Alq3/Al의 구조를 가지는 소자의 발광층에 형광염료를 도포한 적색 발광 소자를 제작하고, 그 전기적 및 광학적인 특성을 평가하였다.

• Current Photovoltaic Research
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• 제11권3호
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.