• Title/Summary/Keyword: Cu-doping

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Structural, Electrical and Magnetic Properties of Wide Bandgap Diluted Magnetic Semiconductor CuAl1-xMnxO2 Ceramics (널은 띠간격 묽은 자성반도체 CuAl1-xMnxO2 세라믹스의 구조 및 전자기 특성)

  • Ji Sung Hwa;Kim Hyojin
    • Korean Journal of Materials Research
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    • v.14 no.8
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    • pp.595-599
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    • 2004
  • We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

Characterization of Cu-doped ZnO thin film and its application of SAW devices (Cu 도핑된 ZnO 박막의 물성 및 SAW 소자 응용)

  • LEE, Jin-Bock;LEE, Hye-Jung;SHIN, Wan-Chul;SEO, Soo-Hyung;PARK, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1488-1490
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    • 2000
  • ZnO:Cu thin films are deposited by using an RF magnetron co-sputtering system with Cu chips attached on ZnO target. Structural and electrical properties are analyzed as a function of deposition conditions, such as Cu chip areas, $O_2/(Ar+O_2)$ ratios, and working pressures, The results show that a higher electrical resistivity above $10^{10}$ ${\Omega}cm$ along with an excellent c-axial growth can be easily achieved by Cu-doping. SAW filters based on the ZnO:Cu films are also fabricated to estimate the electric-mechanical coupling coefficient($K^{2}_{eff}$). Higher $K^{2}_{eff}$ and lower insertion losses are observed for ZnO:Cu films, compared with those for ZnO films.

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$Cu^{2+}$-addition effect on luminescence of ZnS:Cu,Cl blue-green phosphors

  • Cho, Tae-Yeon;Park, Ja-Il;Han, Sang-Do;Gwak, Ji-Hye;Shin, Dong-Hyuk;Chun, Il-Su;Han, Chi-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.576-577
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    • 2008
  • ZnS:Cu,Cl blue-green phosphors were prepared by conventional solid state reaction. Copper activator of different concentrations was doped into ZnS structure at two firing steps. The luminescence characteristics dependent on $Cu^{2+}$ doping concentration of the phosphors has been investigated for inorganic electroluminescent device.

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Cu-doped Ge-Se 박막의 스위칭 특성

  • Nam, Gi-Hyeon;Jeong, Won-Guk;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.157-157
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    • 2010
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. PMC components of Ge-Se doped with Ag ions were studied with help of the previous studies and copper was used for metallic ions taking into account of economy of components. In this study, we investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play role of electrolyte ions. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulks (Nd-Ba-Cu-O 벌크 초전도체의 초전도 특성에 미치는 Ca첨가제의 영향)

  • 이훈배;위성훈;유상임
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.346-350
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    • 2002
  • The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of N $d_{1.8-x}$C $a_{x}$B $a_{2.4}$C $u_{3.4}$ $O_{y}$ (x = 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1% $O_2$ in Ar. Magnetization measurements revealed that the critical temperatures( $T_{c}$) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x = 0.0 to 0.15, respectively, and thus critical current densities( $J_{c}$) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in NdB $a_2$C $u_3$ $O_{y}$(Nd123) and N $d_4$B $a_2$C $u_2$ $O_{10}$(Nd422) were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of $T_{c}$ is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.t.opant.t.t.t.t.t.

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Electrical Properties of Cu-doped Zno (Cu를 첨가한 ZnO의 전기적 특성)

  • Hong, Youn-Woo;Lee, Jae-Ho;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.22-22
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    • 2010
  • 0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.

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Electrical Properties of ZnTe:Cu Films Grown by Hot-Wall Evaporation (열벽 증착(hot-wall evaporaton) 방법으로 성장한 ZnTe:Cu 박막의 전기적 특성)

  • Park, S.G.;Nam, S.G.;O, B.S.;Lee, K.S.
    • Solar Energy
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    • v.17 no.3
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    • pp.51-57
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    • 1997
  • Cu-doped ZnTe thin films have been grown by hot-wall evaporation. The electrical conductivity of the intrinsic ZnTe film was of p-type and as low as $10^{-6}({\Omega}{\cdot}cm)^{-1}$. As the doped Cu concentration was increased, the electrical conductivity was increased. up to $10^2({\Omega}{\cdot}cm)^{-1}$, but the mobility was decreased a little. The heavily doped sample shows the metal-like electrical resistivity.

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Photoemission Studies on Chain Electronic Structures of $Y(Pr)Ba_2Cu_4O_8$ (광전자실험을 이용한 $Y(Pr)Ba_2Cu_4O_8$ 물질의 체인 전자 구조분석)

  • Boo, Y.G.;Jung, W.S.;Han, Ga-Ram;Kim, C.
    • Progress in Superconductivity
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    • v.13 no.3
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    • pp.158-162
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    • 2012
  • $Y(Pr)Ba_2Cu_4O_8$ system is one of the most studied high temperature superconductors. Substitution of Pr for Y in this system suppresses $T_c$ and superconductivity finally disappears at a high Pr doping. There are competing theories for the suppression of $T_c$ but systematic experimental results are very rare. In order to find the change in Fermi surface topology which can affect the superconductivity, we have performed angle-resolved photoemission studies on single crystal samples of $YBa_2Cu_4O_8$ and $PrBa_2Cu_4O_8$. While the Fermi surface of $YBa_2Cu_4O_8$ shows a similar topology to those of other cuprates, we observe only 1D like band structures in $PrBa_2Cu_4O_8$. We find no significant differences in the chain band for both samples.