• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.21-25
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• 2002

The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of $Nd_{1.8-x}Ca_{x]Ba_{2.4}Cu_{3.4}O_{y}$ (x= 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1%O$_2$ in Ar. Magnetization measurements revealed that the critical temperatures(Tc) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x : 0.0 to 0.15, respectively, and thus critical current densities(Jc) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in $NdBa_2Cu_2O_y(Nd123) and Nd_4Ba_2Cu_2O_{10}(Nd422)$,/TEX> were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of Tc is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.

• Progress in Superconductivity and Cryogenics
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• v.2 no.1
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• pp.1-6
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• 2000

The effects of partial substitution of fluorine on physical properties were studied in Ag-sheathes tapes of $Tl_{0.8}Pb_{0.2}Sr_{1.8}Ba_{0.2} Ca_{2.2}Cu_3O_yF_x (0{\leq}x{\leq}1)$ nominal compositions. The tapes were prepared using the powder-in-tube method incorporating an in-situ reaction method. $CuF_2$ was used as a source of F. It was found that F-doping in Tl-1223 system resulted in a decrease in formation temperatire of Tl-1223 phase. and thus significantly deteriorated their superconducting properties. Such disadvantages seem to originate by the fromation of non-beneficial phases such as SrF2 in the early stage of the powder preparation process.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1241-1242
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• 2006

Electromagnetic properties of $CeO_2$ doped and undoped YBaCuO superconductors were evaluated to investigate the effect of pinning center on the magnetization and magnetic shielding. The variation $\DeltaM$ with doping was maximum for 3% doping and decrease with further doping. The magnetic shielding was evaluated by measuring the induced voltage in secondary coil and the voltage initially set to 0.5V, decreased to 0.17V and 0.28V respectively for the undoped and 3% $CeO_2$ doped sample. The much less change in the induced voltage for the 3% doped sample is attributed to the increased flux shielding by shielding vortex current. The $CeO_2$ was converted to fine $BaCeO_3$ particles which were trapped in YBaCuO superconductor during the reaction sintering. The trapped fine particles, $BaCeO_3$ may be acted as a flux pinning center.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.118-120
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• 2009

We reported that the evidence of oxygen doping to copper-phthalocyanine (CuPc) by $O_2$-plasma treatment to Au electrode of inverted top emitting organic light emitting diodes (ITOLEDs). The operation voltage of OLEDs at 150 mA/$cm^2$ decreased from 16.1 to 10.3 V as oxygen atoms indiffued to CuPc layer using $O_2$-plasma. Synchrotron radiation photoelectron spectroscopy results showed that a new bond of Cu-O appeared and the energy difference between the highest occupied molecular orbital and $E_F$ is lowered by 0.20 eV after plasma treatment. Thus the hole injection barrier was lowered, reducing the turn-on voltage and increasing the quantum efficiency of OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.1-5
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• 2008

The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.299-301
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• 1989

This study presents a method of preparing $YBa_2Cu_3O_{7-x}$ ceramic and chlorine doping in it for the purpose of Jc enhancement us ins sol-gel process.Tetramethylammonium-hydroxide and pottasium carbonate solution were added to the aqueous solution of Yttrium nitrate, Barium chloride and Copper nitrate for pH control as well as forming hydroxy-carbonate precipitation. Instead of Barium nitrate, Barium chloride was used for doping chloride impurities in the specimen. The resulted materal showed good high Tc-superconductivity after calcination. Tc and Jc value are 92 K and 120.8 $A/cm^2$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.424-425
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• 2006

Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

• Progress in Superconductivity
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• v.11 no.1
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• pp.67-71
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• 2009

The effect of Cu substitution on the structural and superconducting properties of the $(Ru_{1-x}Cu_x)Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$ system with x = 0, 0.25 and 0.5 prepared under ambient pressure have been investigated. The X-ray diffraction patterns indicated that the Ru ions are replaced by the Cu ions. It is found that the Cu substitution for Ru significantly reduces the ferromagnetic component of field-cooled magnetic susceptibility, but results in a small change in diamagnetic onset transition temperature of zero-field-cooled magnetic susceptibility. In contrast to the Ru $Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$, bulk Meissner effect is observed in the field-cooled magnetization measurements of the Cu doped samples. The experimental results are discussed in connection with the spontaneous vortex phase interpretation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......