• Title/Summary/Keyword: Cu-based oxides

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A Study on the Development of Cu-based Sintered Friction Materials (동계 소결마찰재 개발에 관한 연구)

  • Lee, Jong-Hyung;Choi, Byung-Ho;Kim, Jeong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.21 no.1
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    • pp.83-92
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    • 1997
  • In a study on the development of Cu-based sintered friction materials, the specimens pressed with various compacting pressures $(3-6 ton/cm^2/)$ have been evaluated to find the optimum condition of compacting pressure. As compacting pressure increased up to $(5 ton/cm^2/)$, mechanical properties such as density, hardness, bending strength, wear and coefficient of friction, etc. improved remarkably, but up to 6 ton/cm$^{2}$, decreased slightly because of traps of gases and water vapors in specimen. Disk assembly composed of 12 pieces of Cu-based friction materials has been compared with one of asbestos-and nonasbestos-based friction materials. In dynamic and driving tests to find burst spin strength, corrosion area rate and friction properties, etc., Cu-based sintered friction materials showed better properties than the others, especially in severe conditions because oxides such as $Cu_2O; and; SnO_2$ in the friction surface of friction materials were formed.

Optoelectronic Characteristics of Transparent Cu2O Films Spin-coated on Glass Substrates (스핀코팅으로 제작된 Cu2O 필름의 광전기적 특성)

  • Kwak, Ki-Yeol;Cho, Kyoung-Ah;Kim, Sang-Sig
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.1
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    • pp.123-126
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    • 2010
  • $Cu_2O$ nanoparticles-based films are fabricated by spin-coating on glass substrates and their optoelectronic characteristics are investigated in this study. The $Cu_2O$ films are nearly all-transparent as high as 98% in a wavelength range from 400 nm to 900 nm and three exciton peaks associated with the sublevels in the conduction band are observed at the wavelengths shorter than 400 nm in the absorption spectrum. Under the illumination of the 325 nm wavelength light, the photocurrent efficiency of the $Cu_2O$ film is $1.8\times10^5 {\mu}A/W$ at a voltage of 2.5 V in air.

Evaluation of the STS303-Cu vacuum-brazed by Ni-based alloy (Ni기 삽입금속에 의해 진공 브레이징된 STS303-Cu의 특성평가)

  • Chang, Se-Hun;Hong, Ji-Min;Choi, Se-Weon;Kang, Chang-Seog;Kim, Ho-Sung;Oh, Ik-Hyun
    • Korean Journal of Materials Research
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    • v.17 no.6
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    • pp.293-297
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    • 2007
  • Microstructure and tensile strength of the vacuum brazed stainless steel(STS303) and Cu were investigated. For brazing, the BNi-2, 3, 4, 6 and 7 (A.W.S standard) were used as filler metals. The Oxides such as $Cr_2O_3$ and $SiO_2$ were observed at brazed layers between STS303 and Cu matrix. Also, the intermetallic compounds of Cr-B and Ni-P were observed at brazed layers. Brazed STS303-Cu specimens with BNi-2, 3, 4 filler metals showed almost elastic deformation followed by plastic yielding and strain hardening up to a peak stress. On the other hand, it is likely that the fracture of the brazed specimens with BNi-6 and 7 was occurred in elastic range without plastic yielding up to a peak stress. Among these filler metals, the BNi-2 brazed at $1050^{\circ}C$ showed excellent wettability and the highest tensile strength (101.6MPa).

Electronic Structures of Colossal Magnetoresistive (CMR) $Fe_{1-x}Cu_xCr_2S_4$Spinels (초거대자기저항(CMR) 현상을 보이는 Spinel $Fe_{1-x}Cu_xCr_2S_4$의 전자구조 연구)

  • 박민식;윤석주;민병일
    • Journal of the Korean Magnetics Society
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    • v.8 no.3
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    • pp.111-117
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    • 1998
  • Recent discovery of colossal magnetoresistance (CMR) phenomena in perovskite manganese oxides has evoked great interest for its physical peculiarity and the possible industrial application. Besides manganese oxides, CMR phenomena is also observed in $Tl_2Mn_2O_7$ with pyrochlore structure and in Cr-based chalcogenide with spinel structure. In this paper, we have studied electronic structures of Cr-based chalcogenide spindles $Fe_{1-x}Cu_xCr_2S_4$ at x=0.0, 0.5, 1.0 using the linearized muffin-tin orbital (LMTO) band method within the local density approximation (LDA). The characteristic resistivity for x=0.0, 0.5 could be explained qualitatively in terms of the half-metalic electronic structure and the Jahn-Teller effect. Especially, the half-metallic nature appearing in the metallic temperature regime is well descibed by the proposed conduction model for x=0.0, 0.5, 1.0. We have suggested, based on the conduction model, that the CMR phenomena observed in these compounds are closely correlated with the obtained half-metallic electronic structure.

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Pretreatment Condition of Cu by Ammonium-Based Mixed Solvent and Its Effects on the Fabrication of Ag-Coated Cu Particles (Ag 도금 Cu 입자의 제조에서 암모늄 기반 혼합 용매를 사용한 Cu 입자의 전처리 조건과 이의 영향)

  • Lee, Hee Bum;Lee, Jong-Hyun
    • Korean Journal of Materials Research
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    • v.26 no.3
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    • pp.109-116
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    • 2016
  • To achieve the fabrication of high-quality Ag-coated Cu particles through a wet chemical process, we reported herein pretreatment conditions using an ammonium-based mixed solvent for the removal of a $Cu_2O$ layer on Cu particles that were oxidized in air for 1 hr at $200^{\circ}C$ or for 3 days at room temperature. Furthermore, we discussed the results of post-Ag plating with respect to removal level of the oxide layer. X-ray diffraction results revealed that the removal rate of the oxide layer is directly proportional to the concentration of the pretreatment solvent. With the results of Auger electron spectroscopy using oxidized Cu plates, the concentrations required to completely remove 50-nm-thick and 2-nm-thick oxides within 5 min were determined to be X2.5 and X0.13. However, the optimal concentrations in an actual Ag plating process using Cu powder increased to X0.4 and X0.5, respectively, because the oxidation in powder may be accelerated and the complete removal of oxide should be tuned to the thickest oxide layer among all the particles. Back-scattered electron images showed the formation of pure fine Ag particles instead of a uniform and smooth Ag coating in the Ag plating performed after incomplete removal of the oxide layer, indicating that the remaining oxide layer obstructs heterogeneous nucleation and plating by reduced Ag atoms.

Hydrogen and Ethanol Gas Sensing Properties of Mesoporous P-Type CuO

  • Choi, Yun-Hyuk;Han, Hyun-Soo;Shin, Sun;Shin, Seong-Sik;Hong, Kug-Sun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.222-222
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    • 2012
  • Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

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Molybdenum Oxides as Diffusion Barrier Layers against MoSe2 Formation in A Nonvacuum Process for CuInSe2 Solar Cells (비진공법 CuInSe2 태양전지에서 MoSe2의 생성을 억제하기 위한 산화 몰리브데늄 확산장벽 층)

  • Lee, Byung-Seok;Lee, Doh-Kwon
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.85-90
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    • 2015
  • Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

Glass Forming Ability of Bulk Amorphous Alloy Scrap by Fluxing (플럭스처리에 의한 벌크비정질합금 스크랩의 비정질형성능)

  • Kang, Bok-Hyun;Kim, Ki-Young
    • Journal of Korea Foundry Society
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    • v.30 no.3
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    • pp.94-99
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    • 2010
  • When the returned scrap of bulk amorphous alloy is remelted, impurities such as oxides and intermetallic compounds increase. Glass forming ability of its scrap is deteriorated remarkably. Melt fluxing technique is introduced to enhance the glass forming ability during melting and freezing of bulk amorphous alloys. Cu and Zr based alloys are chosen. Small pieces of these alloy scraps and $B_2O_3$ flux are put together in a quartz tube. Cyclic heating and cooling are done by induction heating and water quenching or air cooling. Melting fluxing was effective for both Cu-based and Zr-based alloy, and their glass forming abilities were improved with increasing the number of fluxing.

Effects of Cu and Ni Additives for Hydrogen Storage and Release of Fe-based Oxide Mediums (Fe-계 산화물 매체의 수소 저장 및 방출을 위한 Cu 및 Ni 첨가제의 효과)

  • Kim, Hong-Soon;Cha, Kwang-Seo;Lee, Dong-Hee;Yoo, Byoung-Kwan;Kang, Kyoung-Soo;Park, Chu-Sik;Kim, Young-Ho
    • Transactions of the Korean hydrogen and new energy society
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    • v.19 no.5
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    • pp.394-402
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    • 2008
  • The Effects of Cu or Ni additives co-added with Ce/Zr mixed oxides to Fe-based oxide mediums were investigated for the purpose of the replacement of Rh, a precious metal additive, in terms of hydrogen storage(reduction by hydrogen) and release(water splitting). From the results of temperature programmed reduction(TPR), initial reduction rate of iron oxide in the mediums was greatly increased with the addition of Cu, similar to that of Rh. For isothermal redox reaction of 10 cycles, the total amounts of hydrogen evolved in water splitting steps for the mediums added with Cu or Ni were highly maintained at ca. 7 mmol/g-material, even though the oxidation rates were slightly lower than that for the medium added with Rh. This result suggests that the replacement of Rh to Cu or Ni is possible as a co-additive for Fe-based oxide mediums.

X-Ray Absorption Spectroscopy: A Complementary Tool for Structural and Electronic Characterization of Solids

  • Jean Etourneau
    • Bulletin of the Korean Chemical Society
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    • v.19 no.1
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    • pp.5-21
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    • 1998
  • The purpose of this paper is to show that X-ray absorption spectroscopy (XANES and EXAFS) is a powerful technique for characterizing both crystalline and amorphous solids from structural (local order) and electronic point of view. The principle of this technique is briefly described by showing the main factors which must be considered for recording and fitting the experimental results. Some non-trivial examples have been selected for demonstrating that XAS spectroscopy is the only technique for bringing a definitive answer as for example: the determination of the local distortion of the $NiO_6$ octahedra in the $Li_{1-z}Ni_{1+z}O_2$ layered oxides and the evidence of the presence of copper pairs in the NASICON-type phosphate $CuZr_2 (PO_4)_3$. Are also reported some significant examples for which XAS spectroscopy is decisive with other characterization methods as (i) Raman spectroscopy for glasses (ii) Mossbauer spectroscopy for $LiNi_{1+z-t}Fe_To_2$ oxides (iii) magnetic measurements for Ce-based intermetallic compounds.