• Proceedings of the KWS Conference
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• 2007.11a
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• pp.211-214
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• 2007

Sn-0.3Ag-0.7Cu 조성의 젖음 특성과 반응 특성을 Sn-1.0Ag-0.5Cu 및 Sn-3.0Ag-0.5Cu 합금의 결과와 비교, 분석하였다. 또한 Sn-0.3Ag-0.7Cu 조성의 용융 및 응고 특성을 DSC로 측정하고, 인장시험을 통한 stress-strain curve를 관찰하였다. 아울러 할로겐 함유량이 많은 플럭스를 사용하여 Sn-0.3Ag-0.7Cu 조성의 젖음 특성을 향상 시킬 수 있는지를 조사하였으며, Sn-0.3Ag-0.7Cu 조성에 미량의 In을 첨가하여 젖음 특성의 개선 정도를 분석하였다. 그 결과 할로겐 함유량이 높은 플럭스를 사용한 경우보다 미량의 In을 첨가한 경우에서 wettability의 향상을 보다 효과적으로 유도할 수 있음을 관찰할 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.65-74
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• 2013

The through-silicon via (TSV) technology is essential for 3-dimensional integrated packaging. TSV technology, however, is still facing several reliability issues including interfacial delamination, crack generation and Cu protrusion. These reliability issues are attributed to themo-mechanical stress mainly caused by a large CTE mismatch between Cu via and surrounding Si. In this study, the thermo-mechanical reliability of copper TSV technology is investigated using numerical analysis. Finite element analysis (FEA) was conducted to analyze three dimensional distribution of the thermal stress and strain near the TSV and the silicon wafer. Several parametric studies were conducted, including the effect of via diameter, via-to-via spacing, and via density on TSV stress. In addition, effects of annealing temperature and via size on Cu protrusion were analyzed. To improve the reliability of the Cu TSV, small diameter via and less via density with proper via-to-via spacing were desirable. To reduce Cu protrusion, smaller via and lower fabrication temperature were recommended. These simulation results will help to understand the thermo-mechanical reliability issues, and provide the design guideline of TSV structure.

• Journal of Life Science
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• v.30 no.4
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• pp.321-330
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• 2020

The aim of this study was to investigate the effect of copper (II) chloride (CuCl₂) on zebrafish. Zebrafish were exposed to various CuCl₂ concentrations and subjected to different exposure times to determine the median lethal concentration (LC₅₀) values. To evaluate stress responses, we measured whole-body cortisol levels and behavioral parameters using the open field test (OFT) or the novel tank test (NTT). The zebrafish were exposed to CuCl₂ solution at concentrations of 1.5-150 ㎍/l or a vehicle for 1 hr before behavioral tests or sample collection for whole-body cortisol. The LC₅₀ values were 30.3, 25.3, and 14.8 ㎍/l at 24, 48, and 96 hr, respectively. The NTT showed that mobility, velocity, and distance covered were significantly lower in zebrafish exposed to CuCl₂ than in the control group (p<0.05), while the turn angle was significantly higher in zebrafish exposed to a CuCl₂ concentration of 150 ㎍/l than in the control group (p<0.05). The OFT also showed that mobility, velocity, and distance covered were significantly lower and the turn angle and meandering were significantly higher in zebrafish exposed to all concentrations of CuCl₂ than in the control group (p<0.05). The whole-body cortisol levels were significantly higher in zebrafish exposed to CuCl₂ than in the control group (p<0.05). These results suggest that exposure to lethal CuCl₂ concentrations induces an intense toxic and stress response in zebrafish, causing behavioral changes and increasing whole-body cortisol levels.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.253-261
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• 1994

Transformation behavior and superelastic behavior of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, X-ray diffraction, tensile test and transmission electron microscopy. Two types of heat treatment are given to the specimens: i) Solutions treatment. ii) thermo-mechanical treatment. The transformation sequence in solution treated Ti-Ni-Cu Alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\rightleftarrows}B19^{\prime}$ and it proceeds in two stages by addition of 10at.%Cu, i. e, $B2{\rightleftarrows}B19{\rightleftarrows}B19^{\prime}$. Also, it has been found that Ti-30Ni-20Cu alloy transformed in one stage : $B2{\rightleftarrows}B19$. The thermo-mechanically treated Ti-47Ni-3Cu alloy transformed in two stages: B2${\rightleftarrows}$rhomboheral phase${\rightleftarrows}B19^{\prime}$, while transformation sequence in Ti-45Ni-5Cu and Ti-40Ni-10Cu alloy transformed as same as solution treated specimens. The critical stress for inducing slip deformation in solution treated and thermo-mechanically treated Ti-40Ni-10Cu alloy is about 90MPa and 320Mpa respectively.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.1-6
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• 2013

A simple thermal oxidation of Cu thin films deposited on planar substrates established a growth of vertically aligned copper oxide (CuO) nanorods. DC sputter-deposited Cu thin films with various thicknesses were oxidized in environments of various oxygen partial pressures to control the kinetics of oxidation. This is a method to synthesize vertically aligned CuO nanorods in a relatively shorter time and at a lower cost than those of other methods such as the popular hydrothermal synthesis. Also, this is a method that does not require a catalyst to synthesize CuO nanorods. The grown CuO nanorods had diameters of ~100 nm and lengths of $1{\sim}25{\mu}m$. We examined the morphology of the synthesized CuO nanorods as a function of the thickness of the Cu films, the gas environment, the oxidation time, the oxidation temperature, the oxygen gas flow rate, etc. The parameters all influence the kinetics of the oxidation, and consequently, the volume expansion in the films. Patterned growth was also carried out to confirm the hypothesis of the CuO nanorod protrusion and growth mechanism. It was found that the compressive stress built up in the Cu film while oxygen molecules incorporated into the film drove CuO nanorods out of the film.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.17-21
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• 2013

Sn whiskers are one of the serious causes of the failure of electronics. Sn whiskers grow spontaneously from Sn-based, lead-free finished surfaces, even at room temperature. A primary factor of these Sn whiskers growth is compressive stress, which enhances the diffusion of Sn or other elements. The sources of compressive stress are the growth of non-uniform large intermetallic compounds along the interface between the Sn grain boundary and Cu substrate. Recent studies revealed the methods for reducing Sn whisker growth. This paper gives an overview about recent researches for mitigation methods of Sn whisker growth during nearly room temperature storage.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.51-56
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• 2015

It has been used various pad finish materials to enhance the reliability of solder joint and recently Electroless Ni Electroless Pd Immersion Gold (the following : ENEPIG) pad has been used more than others. This study is about reliability according to being used in commercial Electrolytic Ni pad and ENEPIG pad, and was observed behavior of various Cu contents. After reflow, the inter-metallic compound (IMC) between solder and pad is composed of $Cu_6Sn_5$ (Ni substituted) by using EDS, and in case of ENEPIG, between IMC and Ni layer was observed the dark layer ($Ni_3P$ layer). Additional, it could be controlled the thickness of dark layer according to Cu contents. Investigated the different fracture mode between electrolytic Ni and ENEPIG pad after drop shock test, in case of soft Ni, accelerated stress propagated along the interface between $1^{st}$ IMC and $2^{nd}$ IMC, and in case of ENEPIG pad, accelerated stress propagated along the weaken surface such as dark layer. The unstable interface exists through IMC, pad material and solder bulk by the lattice mismatch, so that the thermal and physical stress due to the continuous exterior impact is transferred to the IMC interface. Therefore, it is strongly requested to control solder morphology, IMC shape and thickness to improve the solder reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.697-704
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• 2005

The deformation behavior of a bulk amorphous and crystallized amorphous $Zr_{22.5}Ti_{14}Cu_{12.5}Ni_{10}Be_{22.5}$ alloy extracted from a commercial golf club head was characterized at room temperature ana $300^{\circ}C$. At room temperature, amorphous specimens revealed higher yield stress and ductility than partially crystallized alloy specimens. Amorphous alloy displayed some plasticity before fracture, which resulted from strain hardening and repeated crack initiation and propagation. The fracture is mainly localized on one major shear band, and the compressive fracture angle of the amorphous specimen between the stress axis and the fracture plane was about $40^{\circ}$ Scanning electron microscope observations revealed mainly a vein-like structure in the amorphous alloy But the fracture surface of partially crystallized amorphous alloy consisted of vein-like and featureless fracture structure. The partially crystallized alloy extracted from the thick part of the club fractured in the elastic region, at a much lower stress level than the amorphous, suggesting that relatively coarse crystal particles formed during cooling cause the brittle fracture.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.403-410
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• 2001

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.