• Title/Summary/Keyword: Cu paste

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A Study on Melting Phenomena of Solder Paste (솔더 페이스트의 용융현상 연구)

  • 김문일;안병용;정재필
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.1
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    • pp.5-11
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    • 2001
  • Melting behavior and bridge phenomenon of solder paste, which is essential for surface mount technology in pachaging, were investigated. Solder paste of Sn-37%Pb was printed on Cu-pattern of PCB, and heated over melting point. Melting behavior of the paste was observed using CCD-camera. In order to modelize the melting and agglomeration phenomena of paste, two solder balls of 0.76 mm diameter were used. As experimental results, the paste start to melt from the margin of the printed shape. The height of the melted paste decreased from 270 $\mu\textrm{m}$ to 200 $\mu\textrm{m}$ firstly, and finally recovered to 250 $\mu\textrm{m}$ During the melting procedure, pores were evolved from the molted paste. Concerning melting model of solder ball, relationship between contact area of solder ball and soldering time was derived as $\chi^2/t=4r \; \gamma/\eta=7.56 m^2$/s at $280^{\circ}C$.

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The Effect of Frit on Bonding Behavior of Low-firing-substate and Cu Conductor (프릿트 첨가에 따른 저온소성 기판과 Cu와의 접합 거동에 관한 연구)

  • 박정현;이상진
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.601-607
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    • 1995
  • The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

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A Study on the Copper Metallizing Method of $Al_2$O$_3$ Ceramic Surface (알루미나(Al$_2$O$_3$) 세라믹 표면의 강메탈라이징법에 관한 연구)

  • ;;Choi, Y. G.;Kim, Y. S.
    • Journal of Welding and Joining
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    • v.13 no.3
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    • pp.55-64
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    • 1995
  • Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

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Investigation of the Ni/Cu metal grid space for high-effiency, low cost crystlline silicon solar cells (고효율, 저가화 태양전지에 적합한 Ni/Cu 금속 전극 간격에 따른 특성 평가)

  • Kim, Min-Jeong;Lee, Ji-Hun;Cho, Kyeng-Yeon;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.04a
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    • pp.225-229
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    • 2009
  • The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

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Interconnection Processes Using Cu Vias for MEMS Sensor Packages (Cu 비아를 이용한 MEMS 센서의 스택 패키지용 Interconnection 공정)

  • Park, S.H.;Oh, T.S.;Eum, Y.S.;Moon, J.T.
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.63-69
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    • 2007
  • We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

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Voltammetric Determination of Cu(II) Ion at a Chemically Modified Carbon-Paste Electrode Containing 1-(2-pyridylazo)-2-naphthol (1-(2-Pyridylazo)-2-naphthol 수식전극을 사용한 Cu(II) 이온의 전압전류법적 정량)

  • Jun-Ung Bae;Hee Sook Jun;Hye-Young Jang
    • Journal of the Korean Chemical Society
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    • v.37 no.8
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    • pp.723-729
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    • 1993
  • Cu(II) ion-responsive chemically modifed electrodes (CMEs) were constructed by incorporating 1-(2-pyridylazo)-2-naphthol (PAN) into a conventional carbon-paste mixture of graphite powder and Nujol oil. Cu(II) ion was chemically deposited on the surface of the PAN-chemically modified electrode in the absence of an applied potential by immersion of the electrode in a buffer solution (pH 3.2) containing Cu(II) ion, and then reduced at a constant potential in 0.1 M KNO$_3$. And a well-defined voltammetric peak could be obtained by scanning the potential to the positive direction. The electrode surface could be regenerated with exposure to acid solution and reused for the determination of Cu(II) ion. In 5 deposition / measurement / regeneration cycles, the response could be reproduced with 6.1${\%}$ relative standard deviation. In case of using the differential pulse voltammetry, the calibration curve for Cu(II) was linear over the range of 2.0 ${times}$ 10$^{-7}$ ∼ 1.0 ${times}$ 10$^{-6}$ M. And the detection limit was 6.0 ${times}$ 10$^{-8}$ M. Studies of the effect of diverse ions showed that Co, Ni, Zn, Pb, Mg and Ag ions added 10 times more than Cu(II) ion did not influence on the determination of Cu(II) ion, except EDTA and oxalate ions.

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Joint Property of Sn-Cu-Cr(Ca) Middle Temperature Solder for Automotive Electronic Module (자동차 전장모듈용 Sn-Cu-Cr(Ca) 중온 솔더의 접합특성 연구)

  • Bang, Junghwan;Yu, Dong-Yurl;Ko, Yong-Ho;Kim, Jeonghan;Lee, Chang-Woo
    • Journal of Welding and Joining
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    • v.31 no.5
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    • pp.54-58
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    • 2013
  • Joint properties of vehicle ECU (Electric Control Unit) module which was manufactured by using Sn-Cu-Cr-Ca alloy were investigated. A new solder which has a middle melting temperature about $231^{\circ}C$ was fabricated as the type of 300um solder ball and paste type. The prototype modules were made by reflow process and measured spreadability, wettability shear strength and estimated interface reaction. The spreadability of the alloy was about 84% from the measurement of contact angle of the solder ball and the wetting force was measured 2mN. The average shear strength of the module which was manufactured by using the solder paste, was 1.9 $kg/mm^2$. Also, the thickness of IMC(intermetallic compound) was evaluated with various aging temperature and time in order to understand Cr effect on Sn-0.7Cu solder. $Cu_6Sn_5$ IMC was formed between Cu pad and the solder alloy and the average thickness of the $Cu_6Sn_5$ IMC was measured about 4um and it was about 50% of thickness of $Cu_6Sn_5$ IMC in Sn-0.7Cu. It is expected to have a positive effect on reliability of the solder joint.

Electrochemical Detection of Hydroxychloroquine Sulphate Drug using CuO/GO Nanocomposite Modified Carbon Paste Electrode and its Photocatalytic Degradation

  • G. S. Shaila;Dinesh Patil;Naeemakhtar Momin;J. Manjanna
    • Journal of the Korean Electrochemical Society
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    • v.27 no.1
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    • pp.15-31
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    • 2024
  • The antimalarial drug hydroxychloroquine sulphate (HCQ) has taken much attention during the first COVID-19 pandemic phase for the treatment of severe acute respiratory infection (SARI) patients. Hence it is interest to study the electrochemical properties and photocatalytic degradation of the HCQ drug. Copper oxide (CuO) nanoparticles, graphene oxide (GO) and CuO/GO NC (nanocomposite) modified carbon paste electrodes (MCPE) are used for the detection of HCQ in an aqueous medium. Electrochemical behaviour of HCQ (20 μM) was observed using CuO/MCPE, GO/MCPE and CuO/GO NC/MCPE in 0.1 M phosphate buffer at pH 7 with a scan rate of 20 to 120 mV s-1 by cyclic voltammetry (CV). Differential pulse voltammetry (DPV) of HCQ was performed for 0.6 to 16 μM HCQ. The CuO/GO NC/MCPE showed a reasonably good sensitivity of 0.33 to 0.44 μA μM cm-2 with LOD of 69 to 92 nM for HCQ. Furthermore, the CuO/GO NC was used as a catalyst for the photodegradation of HCQ by monitoring its UV-Vis absorption spectra. About 98% was degraded in about 34 min under visible light and after 4 cycles it was 87%. The improved photocatalytic activity may be attributed to decrease in bandgap energy and enhanced ability for the electrons to migrate. Thus, CuO/GO NC showed good results for both sensing and degradation applications as well as reproducibility.

Voltammetric Determination of Droxidopa in the Presence of Tryptophan Using a Nanostructured Base Electrochemical Sensor

  • Yaghoubian, Halimeh;Jahani, Shohreh;Beitollahi, Hadi;tajik, Somayeh;Hosseinzadeh, Rahman;Biparva, Pouria
    • Journal of Electrochemical Science and Technology
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    • v.9 no.2
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    • pp.109-117
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    • 2018
  • A novel carbon paste electrode modified with $Cu-TiO_2$ nanocomposite, 2-(ferrocenylethynyl)fluoren-9-one (2FF) and ionic liquid (IL) (2FF/$Cu-TiO_2$/IL/CPE) was fabricated and employed to study the electrocatalytic oxidation of droxidopa, using cyclic voltammetry (CV), chronoamperometry (CHA) and differential pulse voltammetry (DPV) as diagnostic techniques. It has been found that the oxidation of droxidopa at the surface of modified electrode occurs at a potential of about 295 mV less positive than that of an unmodified CPE. DPV exhibits a linear dynamic range from $5.0{\times}10^{-8}$ to $4.0{\times}10^{-4}M$ and a detection limit of 30.0 nM for droxidopa. Finally this modified electrode was used for simultaneous determination of droxidopa and tryptophan. Also the 2FF/$Cu-TiO_2$/IL/CPE shows excellent ability to determination of droxidopa and tryptophan in real samples.