• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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• pp.38-38
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• 2004

• Progress in Superconductivity
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• 제6권1호
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• pp.37-40
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• 2004

We investigated the effects of impurity doping on the electrical transport and magnetic properties of TEX>$(Ru, Sn)(Sr, La)<_2$$EuCeCu_2$$O_{z}$ samples. We found that Sn substitution fur Ru causes a significant decrease of the volume fraction of ferromagnetic phase, as well as a decrease of the temperature where the ferromagnetic component is observed. La substitution for Sr leads to an increase of the magnetic ordering temperature with a moderate change of ferromagnetic component. The experimental results are discussed in conjunction with the structural data, transport properties and a possible change of oxygen content.

• Bulletin of the Korean Chemical Society
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• 제10권1호
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• pp.5-8
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• 1989

Conventional ceramic method has been used to prepare the green phase, $Y_2BaCuO_5$, commonly observed in 90-K superconductor $YBa_2Cu_3O_P{7-{\delta}}$as an impurity phase. The powder X-ray diffraction analysis indicates that $Y_2BaCuO_5$ has an orthorhombic symmetry with lattice parameter of a = 12.2 $\AA$, b = 5.61 $\AA$, and c = 7.14 $\AA.$ The average g-value 2.13 observed in ESR spectrum is attributable to Cu2+ stabilized in $C_{4v}$ field. From the magnetic susceptibility ($\mu$eff = 2.29 BM) and the ESR measurements, it is confirmed that Cu(II) $3d^9$ electrons in $Y_2BaCuO_5$ are localized and can be characterized by Curie-Weiss behavior. Optical reflectance spectrum shows a broad absorption peak around 680 nm due to dxy ${\rightarrow}$ $dx^2-y^2$ eletronic transition.

• 한국진공학회지
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• 제14권1호
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• pp.17-23
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• 2005

본 논문은 글로우방전 질량분석법(Glow Discharge Mass Spectrometry: GDMS)을 이용하여 구리 박막내의 미량 불순물의 농도분석과 음의 기판 바이어스에 대한 구리 박막내의 불순물의 농도변화에 대해서 고찰하였다. 구리 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V의 기판 바이어스를 걸은 상태에서 증착하였다. 전기를 통하지 않는 분석 샘플의 경우, 직류(DC) GDMS에 의한 분석시, 샘플 표면에서의 charge-up 효과에 의해 분석에 어려움이 있었지만, 본 실험에서는 간편하게 분석이 가능하도록 샘플을 알루미늄 포일(foil)로 감싸서 구리 박막으로부터 실리콘 기판 뒤의 샘플 홀더까지 전기적 접촉이 이루어지도록 하였다. 구리 타겟과 증착된 구리 박막들에 대한 GDMS 분석결과에 의해서, 전체적으로 박막내의 불순물의 양이 음의 기판 바이어스에 의해 줄어듦으로써 구리 박막의 전체 순도를 높일 수 있다는 것을 알게 되었다. 음의 기판 바이어스에 의한 불순물들의 농도변화는 각각의 불순물의 이온화 포텐셜의 차이에 의한 것으로, 박막 증착시 플라즈마내의 Penning ionization effect와 본 논문에서 제시한 이온화 과정에 의해 각 불순물의 농도변화가 설명되어질 수 있었다. 또한, 기판 위에서의 구리 이온들의 충격에 의한 cleaning effect도 박막내의 불순물의 농도변화에 기여했다고 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.543-546
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• 2004

The melting temperature and critical temperature(Tc) of $YBa_2Cu_3O_x$ with deferent content impurities of PbO and $BaPbO_3$ were studied. When the PbO was used as addition in $YBa_2Cu_3O_x$, although the melting point could be reduced, the superconductivity(the transition width, ${\Delta}T_c$) became poor. From the XRD pattern of the sintered mixture of $YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between $YBa_2Cu_3O_x$ and PbO, and the product is $BaPbO_3$. In the process of the reaction the superconducting phase of $YBa_2Cu_3O_x$ was decreased and in the sample $BaPbO_3$ became the main phase. Therefore the superconductivity was reduced. $BaPbO_3$ was chosen as the impurity for the comparative study. The single phase BaPbO3 was synthesized by the simple way from both mixtures of $BaPbO_3$ and PbO, $BaPbO_3\;and\;PbO_2$. Deferent contents of $BaPbO_3$(10%, 20%, 30%) were added in the $YBa_2Cu_3O_x$. By the phase analysis in the XRD patterns it was proved that there werenot reactions between $YBa_2Cu_3O_x$ and $BaPbO_3$. When $BaPbO_3$ was used as impurity in $YBa_2Cu_3O_x$ the superconductivity was much better than PbO as impurity in $YBa_2Cu_3O_x$. But the melting point of $YBa_2Cu_3O_x$ with $BaPbO_3$ could not be found when the temperature was lower than $1000^{\circ}C$ in the DTA measurement.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.57-59
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• 2004

The melting temperature and critical temperature (Tc) of YBa$_2$Cu$_3$Ox with deferent content impurities of PbO and BaPbO$_3$ were studied. When the PbO was used as addition in YBa$_2$Cu$_3$Ox, although the melting point could be reduced, the superconductivity (the transition wide, ΔTc) became poor. From the XRD pattern of the sintered mixture of YBa$_2$Cu$_3$Ox and PbO it was known that there is a reaction between YBa$_2$Cu$_3$Ox and PbO, and the product is BaPbO$_3$. In the process of the reaction the superconducting phase of YBa$_2$Cu$_3$Ox was decreased and in the sample BaPbO$_3$became the main phase. Therefore the superconductivity was reduced. BaPbO$_3$was chosen as the impurity for the comparative study. The single phase BaPbO$_3$was synthesized by the simple way from both mixtures of BaPbO$_3$and PbO, BaPbO$_3$and PbO$_2$. Deferent contents of BaPbO$_3$(10%, 20%, 30%) were added in the YBa$_2$Cu$_3$Ox. By the phase analysis in the XRD patterns it was proved that there were not reactions between YBa$_2$Cu$_3$Ox and BaPbO$_3$. When BaPbO$_3$was used as impurity in YBa$_2$Cu$_3$Ox the superconductivity was much better than PbO as impurity in YBa$_2$Cu$_3$Ox But the melting point of YBa$_2$Cu$_3$Ox with BaPbO$_3$could not be found when the temperature was lower than 1000 $^{\circ}C$ in the DTA measurement.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.213-219
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• 1994

Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

• 한국재료학회지
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• 제6권8호
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• pp.817-824
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• 1996

리모트 수소 플라즈마를 이용하여 Si 기판 위의 구리 오염의 제거 효과에 관하여 조사하였다. 최적의 공정 조건을 찾기 위하여 Si 기판을 1ppm ${CuCI}_{2}$ 표준 화학 용액으로 인위적으로 오염시킨 후 rf power와 세정시간, 거리 (수소플라즈마 중심에서 Si 기판표면까지의 거리)등의 공정 변수를 변화시키며 리모트 수소 플라즈마 세정을 실시하였다. 리모트 수소 플라즈마 세정 후 Si 표면의 분석을 위하여 TXRF(total x-ray reflection fluorescence)와 AFM(atomic force microscope)측정을 실시하였다. 리모트 수소 플라즈마 세정이 Cu의 제거에 효과적이며 Si 표면의 거칠기에 나쁜 영향을 주지 않음을 TXRF와 AFM 분석결과로부터 알 수 있었다. Cu 불순물의 흡착 메커니즘은 산화 환원 전위 이론으로 설명될 수 있으며, Cu 불순물의 제거 메커니즘은 XPS(x-ray photoelectron spectroscopy)분석결과를 근거로 하여 다음과 같이 설명할 수 있다. :먼저 Cu 이온이 Si 표면에 흡착되어 화학적 산화막을 생성한다. 그 다음, 수소 플라즈마 중의 반응성이 강한 수소이온이 이 산화막을 분해시켜 제거하며 Cu 불순물은 산화막이 제거될 때 함께 제거된다.