• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.49-53
• /
• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

• Korean Journal of Metals and Materials
• /
• v.50 no.9
• /
• pp.669-675
• /
• 2012

Hot tearing was the most significant casting defect when the castability evaluation of the Al-Zn-Mg-Cu alloy system was conducted. It was related to the solidification range of the alloy. Therefore, the hot tear susceptibility of the AA7075 alloy, whose solidification range is the widest, was evaluated. The hot tear susceptibility was evaluated by using a mold for a hot tearing test designed to create the condition for the occurrence of hot tear in 8 steps. According to the tearing location and shape, a hot tear susceptibility index (HTS) score was measured. The solidification range of each alloy and hot tear susceptibility was compared and thereafter the microstructure of a near tear defect was observed. As a result, the HTS of the AA7075 alloy was found to be 67. Also, the HTS in relation to a change in Zn, Mg, Cu composition showed a difference of about 6-11% compared to the AA7075 alloy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.121-121
• /
• 2000

반도체 산업의 발달에 따라 소자의 보다 빠른 동작 속도와 큰 집적도를 갖은 ULSI 구조를 얻기 위해, 새로운 금속배선 재료가 요구되고 있다. 기존의 금속 배선인 Al 및 Al 합금은 비교적 낮은 비저항과 박막형성의 용이함으로 인하여 현재까지 금속배선 재료로 사용되고 있으나, 고집적화에 따라 RC Time Delay와 Electromigration의 문제점을 들어내었다. 이러한 문제를 해결할 새로운 배선 재료로 Al보다 낮은 비저항을 가지며, electromigration 저항성을 갖는 Cu 금속배선 재료가 활발히 연구되고 있다. 본 실험에서는 (100) Si 웨이퍼를 기판으로 사용하였으며, 각층은 SiO2/Si3N4/EP Cu/Seed Cu/ TaN/SiO2/Si wafer 상태로 증착하였다. 확산방지막으로 TaN을 사용하였고, seed Cu는 sputtering 으로 증착하였으며, seed Cu 만으로 된 박막과 seed Cu + electro plating Cu로 구성된 박막을 제작하였다. 제작 완료된 박막은 N2 분위기에서 20$0^{\circ}C$ 120 min, 45$0^{\circ}C$ 60min 동안 열처리하여 Cu 박막의 조직 변화를 TEM 및 여러 분석방법을 이용하여 분석하였다. Plan-view TEM결과, 45$0^{\circ}C$, 60min 열처리함에 따라 결정립 성장이 일어난 것을 확인 할 수 있었다. 그러나, 성장후에도 twin boundary, stacking fault, dislocation, small defect 등은 여전히 남아 있음이 관찰된다. 그림 1(a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.

• Proceedings of the Korean Nuclear Society Conference
• /
• 2004.10a
• /
• pp.941-942
• /
• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.86-87
• /
• 2009

High quality $CuInSe_2$ (CIS) were grown on GaAs substrate by using the hot wall epitaxy method. The behavior of point defects in the CIS layer investigated by using photoluminescence (PL) at 10 K. Point defects originating from $V_{Cu}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ were classified as donor or acceptor types. These PL results also led us to confirm that the p-type CIS layer had obviously converted into n-type after the Cu atmosphere treatment. Finally, we found that the In in the CIS layer did not form the native defects, because In existed in the form of stable bonds in the CIS layer.

• Journal of Korea Foundry Society
• /
• v.41 no.3
• /
• pp.241-251
• /
• 2021

7000-series aluminum alloys are noted for their superior strength compared with other Al alloys, and their billets are generally fabricated by direct-chill (DC) casting. Surface defects in a DC-cast aluminum billet are mainly related to exudation and the meniscus freezing phenomenon, which are influenced by alloy compositions, casting speed, and casting temperature. 7000-series aluminum alloys have a wide freezing range during solidification, which makes it easy for casting defects to occur. In this study, we investigated surface defect evolution in casting billets of Al-8Zn-2Mg-2Cu alloy fabricated by a DC casting process. The billets showed "wavy" or "dotted" surfaces. The wavy surface was formed by meniscus freezing at a lower casting speed (200 mm/min) and temperature (655 ℃). In the wavy surface, refined dendritic cells were observed in a concave region due to the constitutional supercooling caused by meniscus freezing. Meanwhile, at a higher casting temperature (675 ℃), the dotted surface was formed by pore formation. In the dotted surfaces in the billet formed at a high casting speed (230 mm/min), an exudation layer was formed by the high metallostatic head pressure. The dotted region and the smooth region had a refined dendritic morphology and a columnar morphology at the exudation layer, respectively. This is attributed to the formation of gas pores in the dotted region.

• Current Photovoltaic Research
• /
• v.3 no.2
• /
• pp.39-44
• /
• 2015

$Cu(In,Ga)_3Se_5$ (${\beta}-CIGS$) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, ${\beta}-CIGS$ film was not well characterized yet due to lower efficiency compared to $Cu(In,Ga)Se_2$ (${\alpha}-CIGS$). In this work, ${\beta}-CIGS$ films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of ${\beta}-CIGS$ phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the ${\beta}-CIGS$ film at $200^{\circ}C$ increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at $200^{\circ}C$, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance improvement was lower Cu content at the surface instead of higher Ga content.

• 한국초전도학회:학술대회논문집
• /
• v.11
• /
• pp.22-22
• /
• 2001

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.431-431
• /
• 2016

Typical Cu(In,Ga)Se2 (CIGS)-based solar cells have a buffer layer between CIGS absorber layer and transparent ZnO front electrode, which plays an important role in improving the cell performance. Among various buffer materials, chemical bath deposition (CBD)-ZnS is being steadily studied to alternative to conventional CdS and the efficiency of CBD-ZnS/CIGS solar cell shows the comparable values with that of CdS/CIGS solar cell. The intriguing thing is that reversible changes occur after exposure to illumination due to the metastable defect states in completed ZnS/CIGS solar cell, which induces an improvement of solar cell performance. Thus, it implies that the understanding of metastable defects in CBD-ZnS/CIGS solar cell is important issue. In this study, we fabricate the ITO/i-ZnO/CBD-ZnS/CIGS/Mo/SLG solar cells by controlling the NH4OH mole concentration (from 2 M to 3.5 M) of CBD-ZnS buffer layer and observe their conversion efficiency with and without light soaking for 1 hr. From the results, NH4OH mole concentration and light exposure can significantly affect the CBD-ZnS/CIGS solar cell performance. In order to investigate that which layer can contain metastable defect states to influence on solar cell performance, impedance spectroscopy and capacitance profiling technique with exposure to illumination have been applied to CBD-ZnS/CIGS solar cell. These techniques give a very useful information on the density of states within the bandgap of CIGS, free carriers density, and light-induced metastable effects. Here, we present the rearranged charge distribution after exposure to illumination and suggest the origin of the metastable defect states in CBD-ZnS/CIGS solar cell.

• Korean Journal of Metals and Materials
• /
• v.60 no.4
• /
• pp.329-339
• /
• 2022

The effect of Cu content on the microstructure and mechanical properties of Al-8.0Zn-2.5Mg-xCu (x: 0, 1, 2, 3) aluminum alloys manufactured by the twin-roll casting process was investigated. The Al-8.0Zn-2.5Mg-xCu alloy showed an increase in surface defects with increasing Cu content. This is because the amount of residual liquid in the final solidification region increased from 9.6 wt.% to 18.3 wt.% as the Cu content increased from 0Cu to 3 Cu alloy. For the 3Cu alloy, as the amount of residual liquid in the final solidification region exceeded the critical point, a large number of surface defects and internal shrinkage defect were observed. The main secondary phases of the four alloys were the T(Mg₃₂(Al, Zn)₄₉) and η(MgZn₂) phases, and their fraction increased with Cu content. These secondary phases mainly existed in the center segregation band, and a fine η(MgZn₂) phase was additionally observed. In terms of mechanical properties, as the Cu content increased, the hardness of the center matrix, secondary phase, and overall hardness increased respectively. Although the yield strength increased, the tensile strength and elongation decreased because the center segregation band was widened from 684 ㎛ to 790 ㎛ with increasing Cu content.