• Proceedings of the KWS Conference
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• 2003.11a
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• pp.237-239
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• 2003

• Journal of Powder Materials
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• v.24 no.5
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• pp.377-383
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• 2017

Microstructure, electric, and thermal properties of the Ta-Cu composite is evaluated for the application in electric contact materials. This material has the potential to be used in a medium for a high current range of current conditions, replacing Ag-MO, W, and WC containing materials. The optimized SPS process conditions are a temperature of $900^{\circ}C$ for a 5 min holding time under a 30 MPa mechanical pressure. Comparative research is carried out for the calculated and actual values of the thermal and electric properties. The range of actual thermal and electric properties of the Ta-Cu composite are 50~300 W/mk and 10~90 %IACS, respectively, according to the compositional change of the 90 to 10 wt% Ta-Cu system. The results related to the electric contact properties, suggest that less than 50 wt% of Ta compositions are possible in applications of electric contact materials.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.272.2-272.2
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• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• Journal of Welding and Joining
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• v.22 no.1
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• pp.43-49
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• 2004

Contact tip is located so near to welding arc that it is heated to high temperature during long time welding. In such a situation, tip changes in its microstructure and in turn its mechanical properties. This study was intended to investigate those changes by using simulated heat treatment. As a result of this study, it was confirmed that tip of Cu-P alloy hardened with severe cold deformation lose its initial hardness to a large extent within 60 min due to the occurrence of rapid recrystallization while that of Cu-Cr composition hardened by proper aging treatment can preserve its intial hardness for about 1,000 min or longer. Based on these results, suggested was a guideline that can classify contact tips into two different grades: deformation-hardened type and precipitation-hardened type. Following a guideline, a tip with Cu-Cr composition can be classified into the deformation-hardened type if it is in the over-aged condition. Such a guideline is well described.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.217-220
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• 2014

We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section for photovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to a flat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solder and an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's design where the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solder to 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. We also see an improvement of reflectivity in the curved surface.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.27-32
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• 2010

For the flip chip joints processed using Cu pillar bumps and Sn pads, thermal cycling and high temperature storage reliabilities were examined as a function of the Sn pad height. With increasing the height of the Sn pad, which composed of the flip chip joint, from 5 ${\mu}m$ to 30 ${\mu}m$, the contact resistance of the flip chip joint decreased from 31.7 $m{\Omega}$ to 13.8 $m{\Omega}$. Even after thermal cycles of 1000 times ranging from $-45^{\circ}C$ to $125^{\circ}C$, the Cu pillar flip chip joints exhibited the contact resistance increment below 12% and the shear failure forces similar to those before the thermal cycling test. The contact resistance increment of the Cu pillar flip chip joints was maintained below 20% after 1000 hours storage at $125^{\circ}C$.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.66-66
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• 2009

Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites(diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature 940 $^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.